公开(公告)号：WO2011012624A1

公开(公告)日：2011-02-03

申请号：PCT/EP2010/060894

申请日：2010-07-27

Applicant: ASML Netherlands B.V. ,  CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

Inventor： CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation, the first image being formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

Abstract translation: 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在衬底上形成结构，该结构具有至少一个特征，该特征在印刷轮廓中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像，第一图像使用非零次衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

公开(公告)号：WO2018233947A1

公开(公告)日：2018-12-27

申请号：PCT/EP2018/062778

申请日：2018-05-16

Applicant: ASML NETHERLANDS B.V.

Inventor： JAK, Martin Jacobus Johan ,  QUINTANILHA, Richard ,  DEN BOEF, Arie Jeffrey ,  KUBIS, Michael

IPC: G03F7/20

Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth / pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

公开(公告)号：WO2016030255A3

公开(公告)日：2016-03-03

申请号：PCT/EP2015/069062

申请日：2015-08-19

Applicant: ASML NETHERLANDS B.V.

Inventor： BHATTACHARYYA, Kaustuve ,  VAN BUEL, Henricus, Wilhelmus, Maria ,  FOUQUET, Christophe, David ,  SMILDE, Hendrik, Jan, Hidde ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie, Jeffrey ,  VAN HAREN, Richard, Johannes, Franciscus ,  LIU, Xing Lan ,  BELTMAN, Johannes, Marcus, Maria ,  FUCHS, Andreas ,  ADAM, Omer, Abubaker, Omer ,  KUBIS, Michael ,  JAK, Martin, Jacobus, Johan

IPC: G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer. A method of devising such a measurement target involving locating an assist feature at a periphery of the sub-targets, the assist feature being configured to reduce measured intensity peaks at the periphery of the sub-targets.

Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标均包括一对周期性结构，以及 第一子目标具有与第二子目标不同的设计，包括第一子目标周期性结构的不同设计具有与第二子目标周期性结构不同的间距，特征宽度，空间宽度和/或分段 或（2）第一和第二子目标分别在第一层中包括第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下的第二层中的第一周期性结构的下方，并且存在 在第二层中的第二周期性结构下方没有周期性结构，并且第四周期性结构至少部分地位于第二层下方的第三层中的第二周期性结构下方。 一种设计这种测量目标的方法涉及在辅助目标的外围定位辅助特征，辅助特征被配置为减少在辅助目标的外围处测量的强度峰值。

公开(公告)号：WO2017144343A1

公开(公告)日：2017-08-31

申请号：PCT/EP2017/053499

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V. ,  LAM RESEARCH CORPORATION

Inventor： KUBIS, Michael ,  JOCHEMSEN, Marinus ,  WISE, Richard, Stephen ,  SHAMMA, Nader ,  DIXIT, Girish, Anant ,  REIJNEN, Liesbeth ,  VIATKINA, Ekaterina, Mikhailovna ,  LUCA, Melisa ,  MULKENS, Johannes, Catharinus, Hubertus

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/70625

Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

Abstract translation: 用于确定图案化过程的感兴趣参数（例如临界尺寸）的校正的方法和相关装置以及计算机程序。 该方法包括基于结构的感兴趣参数的测量以及曝光控制关系和过程控制来确定曝光控制参数的曝光控制校正，以及可选地确定过程控制参数的过程控制校正 关系。 曝光控制关系描述了感兴趣的参数对曝光控制参数的依赖性，并且过程控制关系描述了感兴趣的参数对过程控制参数的依赖性。 曝光控制校正和过程控制校正可以被共同优化以最小化随后曝光和处理的结构相对于感兴趣的目标参数的感兴趣参数的变化。

公开(公告)号：WO2012062858A1

公开(公告)日：2012-05-18

申请号：PCT/EP2011/069845

申请日：2011-11-10

Applicant: ASML NETHERLANDS B.V. ,  SMILDE, Hendrik ,  BLEEKER, Arno ,  COENE, Willem ,  KUBIS, Michael ,  WARNAAR, Patrick

Inventor： SMILDE, Hendrik ,  BLEEKER, Arno ,  COENE, Willem ,  KUBIS, Michael ,  WARNAAR, Patrick

IPC: G03F7/20 ,  G01N21/956

CPC classification number: G03F7/70633 ,  G03F7/70483 ,  G03F7/70625 ,  G03F7/70641 ,  G06N99/005

Abstract: Methods are disclosed for measuring target structures (32-35) formed by a lithographic process on a substrate (W). A grating structure within said target is smaller than an illumination spot (31) and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor (19) and a second branch leading to a substrate plane imaging sensor (23). A spatial light modulator (SLM) (24, 124, 224, 324) is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.

Abstract translation: 公开了用于测量由基板（W）上的光刻工艺形成的目标结构（32-35）的方法。 所述目标内的光栅结构小于测量光学系统的照明光点（31）和视场。 光学系统具有通向光瞳平面成像传感器（19）的第一分支和通向基板平面成像传感器（23）的第二分支。 空间光调制器（SLM）（24,124,224,324）被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。 通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。

公开(公告)号：WO2022043408A1

公开(公告)日：2022-03-03

申请号：PCT/EP2021/073552

申请日：2021-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  KAMALI, Mohammad, Reza ,  KUBIS, Michael

IPC: G06F30/398 ,  H01L21/027 ,  H01J37/32

Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.

公开(公告)号：WO2013178404A2

公开(公告)日：2013-12-05

申请号：PCT/EP2013/058375

申请日：2013-04-23

Applicant: ASML NETHERLANDS B.V.

Inventor： LYULINA, Irina ,  BIJNEN, Franciscus ,  EDART, Remi ,  KIERS, Antoine ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

公开(公告)号：WO2013087431A3

公开(公告)日：2013-06-20

申请号：PCT/EP2012/074163

申请日：2012-11-30

Applicant: ASML NETHERLANDS B.V.

Inventor： DEN BOEF, Arie ,  BHATTACHARYYA, Kaustuve ,  JAK, Martin ,  KUBIS, Michael

IPC: G03F9/00 ,  G03F7/20

Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.

公开(公告)号：WO2012126684A1

公开(公告)日：2012-09-27

申请号：PCT/EP2012/052862

申请日：2012-02-20

Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  BHATTACHARYYA, Kaustuve ,  SMILDE, Hendrik ,  KUBIS, Michael

Inventor： VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  BHATTACHARYYA, Kaustuve ,  SMILDE, Hendrik ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品特征和计量目标。 计量目标包括测量重叠的大目标和小目标。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线之内，而小目标则分布在产品区域内。

公开(公告)号：WO2017067765A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/073084

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  MOS, Everhardus, Cornelis ,  VAN HAREN, Richard, Johannes, Franciscus ,  WARDENIER, Peter, Hanzen ,  JENSEN, Erik ,  KASTRUP, Bernardo ,  KUBIS, Michael ,  MULKENS, Johannes, Catharinus, Hubertus ,  DECKERS, David, Frans, Simon ,  HENKE, Wolfgang, Helmut ,  LEE, Joungchel

IPC: G03F7/20

CPC classification number: G03F1/72 ,  G03F7/70425 ,  G03F7/70625

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

Abstract translation: 一种方法，包括：在由图案化系统的蚀刻工具处理之后获得图案的测量和/或模拟结果，基于所述测量结果确定由于蚀刻加载效应引起的图案化误差和/ 或模拟结果，并且由计算机系统基于图案化误差来创建用于修改图案形成装置和/或用于从蚀刻工具向上游调整图案化系统中的修改装置的修改信息，其中图案化错误被转换为 当根据修改信息修改图案形成装置和/或根据修改信息调整修改装置时，可校正的误差和/或减小到一定范围。