公开(公告)号：WO2013029957A2

公开(公告)日：2013-03-07

申请号：PCT/EP2012/065599

申请日：2012-08-09

Applicant: ASML NETHERLANDS B.V. ,  KISTEMAN, Arend ,  KIERS, Antoine ,  TEL, Wim ,  THEEUWES, Thomas

Inventor： KISTEMAN, Arend ,  KIERS, Antoine ,  TEL, Wim ,  THEEUWES, Thomas

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70616 ,  G03F7/70625 ,  G03F9/7026

Abstract: Disclosed is a method of, and associated apparatus for, determining focus corrections for a lithographic projection apparatus. The method comprises: exposing a plurality of global correction fields on a test substrate, each comprising a plurality of global correction marks, and each being exposed with a tilted focus offset across it; measuring a focus dependent characteristic for each of the plurality of global correction marks to determine interfield focus variation information; and calculating interfield focus corrections from said interfield focus variation information.

Abstract translation: 公开了用于确定光刻投影设备的焦点校正的方法和相关设备。 该方法包括：在测试基板上曝光多个全局校正场，每个全局校正场包括多个全局校正标记，并且每个全息校正场以其上的倾斜聚焦偏移曝光; 测量所述多个全局校正标记中的每一个的依赖于焦点的特性以确定场间焦点变化信息; 并根据所述场间焦点变化信息计算场间焦点校正。

公开(公告)号：WO2013178404A2

公开(公告)日：2013-12-05

申请号：PCT/EP2013/058375

申请日：2013-04-23

Applicant: ASML NETHERLANDS B.V.

Inventor： LYULINA, Irina ,  BIJNEN, Franciscus ,  EDART, Remi ,  KIERS, Antoine ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

公开(公告)号：WO2010076254A1

公开(公告)日：2010-07-08

申请号：PCT/EP2009/067620

申请日：2009-12-21

Applicant: ASML Netherlands B.V. ,  MEGENS, Henricus ,  FINDERS, Jozef ,  KIERS, Antoine ,  QUAEDACKERS, Johannes ,  VAN DER SCHAAR, Maurits ,  LEEWIS, Christian ,  VAN LAARHOVEN, Hendrik

Inventor： MEGENS, Henricus ,  FINDERS, Jozef ,  KIERS, Antoine ,  QUAEDACKERS, Johannes ,  VAN DER SCHAAR, Maurits ,  LEEWIS, Christian ,  VAN LAARHOVEN, Hendrik

IPC: G03F7/20

CPC classification number: G03F7/70466 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: A first target population and a second target population are etched into a substrate. The second target population has an asymmetry with respect to the first target population. This can allow the different target populations to be distinguished and characteristics of the different target populations determined.

Abstract translation: 将第一目标群体和第二目标群体蚀刻到基底中。 第二个目标人口与第一个目标人群有不对称性。 这可以允许区分不同的目标群体并确定不同目标群体的特征。