Abstract:
Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.
Abstract:
A metal component (262M, 300M) is designed for use in an EUV lithography apparatus, for example as a spectral purity filter (260) or a heating element (300) in a hydrogen radical generator. An exposed surface of the metal is treated (262P, 300P) to inhibit the formation of an oxide of said metal in an air environment prior to operation. This prevents contamination of optical components by subsequent evaporation of the oxide during operation of the component at elevated temperatures.
Abstract:
A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000 °C.
Abstract:
A method of forming a spectral purity filter having a plurality of apertures configured to transmit extreme ultraviolet radiation and suppress transmission of a second type of radiation, in which trenches are formed in a base material in a pattern corresponding to the walls to be formed between the apertures. The trenches are filled with a grid material to form walls of the grid material, and the base material is selectively removed until the grid material is exposed and forms the spaces between the walls of the grid material for the apertures.
Abstract:
A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and -1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.
Abstract:
A spectral purity filter, in particular for use in a lithographic apparatus using EUV radiation for the projection beam, includes a plurality of apertures in a substrate. The apertures are defined by walls having side surfaces that are inclined to the normal to a front surface of the substrate.
Abstract:
A method for manufacturing a spectral purity filter is provided in which openings in a first surface of a base material, corresponding to a plurality of apertures of the spectral purity filter, are formed. At least the surfaces of the base material surrounding the openings in the first surface are chemically treated to form a layer of a second material, and the base material is etched from the second surface such that the openings extend from the first surface of the base material to the second surface of the base material.
Abstract:
A method for removal of a deposition on an uncapped multilayer mirror of an apparatus. The method includes providing a gas comprising one or more Of H 2 , D 2 and DH, and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the apparatus; producing hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas; and bringing the uncapped multilayer mirror with deposition into contact with at least part of the hydrogen and/or deuterium radicals and the radicals of the one or more additional compounds to remove at least part of the deposition.