公开(公告)号：WO2023041488A1

公开(公告)日：2023-03-23

申请号：PCT/EP2022/075299

申请日：2022-09-12

Applicant: ASML NETHERLANDS B.V.

Inventor： NOOT, Marc, Johannes ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  MIDDLEBROOKS, Scott, Anderson ,  BHATTACHARYYA, Kaustuve

IPC: G03F7/20

Abstract: Disclosed herein is a method to determine a metrology contribution from statistically independent sources comprising providing a plurality of contributions from statistically independent sources obtained at a plurality of measurement settings, determining a metrology contribution from the said contributions wherein the metrology contribution is the contribution having least dependence as a function of said measurement settings.

公开(公告)号：WO2020074412A1

公开(公告)日：2020-04-16

申请号：PCT/EP2019/077016

申请日：2019-10-07

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHOU, Zili ,  PANDEY, Nitesh ,  ZWIER, Olger, Victor ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  MC NAMARA, Elliott, Gerard ,  DEN BOEF, Arie, Jeffrey ,  HINNEN, Paul, Christiaan ,  BOZKURT, Murat ,  OTTENS, Joost, Jeroen ,  BHATTACHARYYA, Kaustuve

IPC: G03F7/20

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：WO2019048145A1

公开(公告)日：2019-03-14

申请号：PCT/EP2018/071069

申请日：2018-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： MATHIJSSEN, Simon, Gijsbert, Josephus ,  JAK, Martin, Jacobus, Johan ,  BHATTACHARYYA, Kaustuve

IPC: G03F7/20

Abstract: An apparatus and method for estimating a parameter of a lithographic process and an apparatus and method for determining a relationship between a measure of quality of an estimate of a parameter of a lithographic process are provided. In the apparatus for estimating the parameter a processor is configured to determine a quality of the estimate of the parameter relating to the tested substrate based on a measure of feature asymmetry in the at least first features of the tested substrate and further based on a relationship determined for a plurality of corresponding at least first features of at least one further substrate representative of the tested substrate, the relationship being between a measure of quality of an estimate of the parameter relating to the at least one further substrate and a measure of feature asymmetry in the corresponding first features.

公开(公告)号：WO2017182235A1

公开(公告)日：2017-10-26

申请号：PCT/EP2017/057261

申请日：2017-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： DEN BOEF, Arie, Jeffrey ,  BHATTACHARYYA, Kaustuve

IPC: G03F7/20

Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter interest is corrected by a stack difference parameter, the stack difference parameter representing an undesigned difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

Abstract translation: 一种方法，包括：获得使用图案化工艺处理的衬底上的测量目标的测量结果，所述测量结果已经使用测量辐射获得; 并且从所述测量导出所述图案化过程的感兴趣参数，其中所述参数兴趣由堆叠差异参数校正，所述堆叠差异参数表示所述目标的相邻周期性结构之间或所述度量目标与 基板上的另一个相邻目标。

公开(公告)号：WO2012010458A1

公开(公告)日：2012-01-26

申请号：PCT/EP2011/061822

申请日：2011-07-12

Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

Inventor： VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

IPC: G03F7/20

CPC classification number: A01H1/06 ,  A01G22/00 ,  C12N15/8201 ,  G03B27/52 ,  G03B27/53 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p (n'), p (n'') and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

Abstract translation: 确定重叠错误的方法。 测量具有过程引起的不对称性的覆盖目标。 构建目标模型。 修改模型，例如通过移动结构之一来补偿不对称性。 使用修改的模型计算不对称引起的覆盖误差。 通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。 在一个示例中，通过改变不对称p（n'），p（n“）修改模型，并且对于多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定叠加误差的步骤 生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

公开(公告)号：WO2022122546A1

公开(公告)日：2022-06-16

申请号：PCT/EP2021/083968

申请日：2021-12-02

Applicant: ASML NETHERLANDS B.V. [NL]/[NL]

Inventor： DAVIS, Timothy, Dugan ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  BHATTACHARYYA, Kaustuve ,  GOORDEN, Sebastianus, Adrianus ,  KOOLEN, Armand, Eugene, Albert ,  JEON, Sera ,  LIN, Shuo-Chun

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method of metrology. The method comprises measuring at least one surrounding observable parameter relating to a surrounding signal contribution to a metrology signal which comprises a contribution to said metrology signal which is not attributable to at least one target being measured and determining a correction from said surrounding signal observable parameter. The correction is used to correct first measurement data relating to measurement of one or more targets using measurement radiation forming a measurement spot on one or more of said one or more targets which is larger than one of said targets.

公开(公告)号：WO2021224009A1

公开(公告)日：2021-11-11

申请号：PCT/EP2021/060403

申请日：2021-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： ZWIER, Olger, Victor ,  VAN DER SCHAAR, Maurits ,  BOS, Hilko, Dirk ,  VAN DER LAAN, Hans ,  AL ARIF, S. M. Masudur Rahman ,  VAN BUEL, Henricus, Wilhelmus, Maria ,  KOOLEN, Armand, Eugene, Albert ,  CALADO, Victor, Emanuel ,  BHATTACHARYYA, Kaustuve ,  LIAN, Jin ,  GOORDEN, Sebastianus, Adrianus ,  LIM, Hui Quan

IPC: G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00

Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.

公开(公告)号：WO2021122016A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/084387

申请日：2020-12-03

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： TINNEMANS, Patricius, Aloysius, Jacobus ,  AARTS, Igor, Matheus, Petronella ,  BHATTACHARYYA, Kaustuve ,  BRINKHOF, Ralph ,  KARSSEMEIJER, Leendert, Jan ,  KEIJ, Stefan, Carolus, Jacobus, Antonius ,  KOK, Haico, Victor ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  MEGENS, Henricus, Johannes, Lambertus ,  REHMAN, Samee, Ur

IPC: G03F7/20 ,  G03F9/00 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7034

Abstract: Disclosed is a metrology method relating to measurement of a structure on a substrate, said structure being subject to one or more asymmetric deviation. The method comprises obtaining at least one intensity asymmetry value relating to the asymmetric deviation, wherein the at least one intensity asymmetry value comprises a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by said structure; determining at least one phase offset value corresponding to the one or more asymmetric deviation based on said at least one intensity asymmetry value; and determining one or more measurement correction for said one or more asymmetric deviation from the one or more phase offset.

公开(公告)号：WO2020141140A1

公开(公告)日：2020-07-09

申请号：PCT/EP2019/087015

申请日：2019-12-24

Applicant: ASML NETHERLANDS B.V.

Inventor： MATHIJSSEN, Simon, Gijsbert, Josephus ,  NOOT, Marc, Johannes ,  BHATTACHARYYA, Kaustuve ,  DEN BOEF, Arie, Jeffrey ,  GRZELA, Grzegorz ,  DAVIS, Timothy, Dugan ,  ZWIER, Olger, Victor ,  HUIJGEN, Ralph, Timotheus ,  ENGBLOM, Peter, David ,  GEMMINK, Jan-Willem

IPC: G03F7/20 ,  G06T5/00 ,  G06T5/50

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

公开(公告)号：WO2019002003A1

公开(公告)日：2019-01-03

申请号：PCT/EP2018/066117

申请日：2018-06-18

Applicant: ASML NETHERLANDS B.V.

Inventor： BHATTACHARYYA, Kaustuve ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  NOOT, Marc, Johannes ,  DEN BOEF, Arie, Jeffrey ,  HAJIAHMADI, Mohammadreza ,  FARHADZADEH, Farzad

IPC: G03F7/20

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.