公开(公告)号：US20210389677A1

公开(公告)日：2021-12-16

申请号：US17295193

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi LIN ,  Cyrus Emil TABERY ,  Hakki Ergün CEKLI ,  Simon Philip Spencer HASTINGS ,  Boris MENCHTCHIKOV ,  Yi ZOU ,  Yana CHENG ,  Maxime Philippe Frederic GENIN ,  Tzu-Chao CHEN ,  Davit HARUTYUNYAN ,  Youping ZHANG

IPC: G03F7/20 ,  G05B13/02 ,  G05B19/418 ,  H01L21/66

Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：US20220011728A1

公开(公告)日：2022-01-13

申请号：US17293373

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping ZHANG ,  Boris MENCHTCHIKOV ,  Cyrus Emil TABERY ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG ,  Simon Philip Spencer HASTINGS ,  Maxime Philippe Frederic GENIN

IPC: G05B13/04 ,  G05B13/02 ,  G06F30/27 ,  G06F30/10 ,  G06N3/08 ,  G06N3/04

Abstract: A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.

公开(公告)号：US20210397172A1

公开(公告)日：2021-12-23

申请号：US17296316

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Wim Tjibbo TEL ,  Daan Maurits SLOTBOOM ,  Vadim Yourievich TIMOSHKOV ,  Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN ,  Boris MENCHTCHIKOV ,  Simon Philip Spencer HASTINGS ,  Cyrus Emil TABERY ,  Maxime Philippe Frederic GENIN ,  Youping ZHANG ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG

IPC: G05B19/418

Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：US20210150115A1

公开(公告)日：2021-05-20

申请号：US16629633

申请日：2018-06-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Lin Lee CHEONG ,  Bruno LA FONTAINE ,  Marc Jurian KEA ,  Yasri YUDHISTIRA ,  Maxime Philippe Frederic GENIN

IPC: G06F30/398 ,  G06F30/392

Abstract: A method including obtaining verified values of a characteristic of a plurality of patterns on a substrate produced by a device manufacturing process; obtaining computed values of the characteristic using a non-probabilistic model; obtaining values of a residue of the non-probabilistic model based on the verified values and the computed values; and obtaining an attribute of a distribution of the residue based on the values of the residue. Also disclosed herein are methods of computing a probability of defects on a substrate produced by the device manufacturing process, and of obtaining an attribute of a distribution of the residue of a non-probabilistic model.