公开(公告)号：US20220011728A1

公开(公告)日：2022-01-13

申请号：US17293373

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping ZHANG ,  Boris MENCHTCHIKOV ,  Cyrus Emil TABERY ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG ,  Simon Philip Spencer HASTINGS ,  Maxime Philippe Frederic GENIN

IPC: G05B13/04 ,  G05B13/02 ,  G06F30/27 ,  G06F30/10 ,  G06N3/08 ,  G06N3/04

Abstract: A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.

公开(公告)号：US20210397172A1

公开(公告)日：2021-12-23

申请号：US17296316

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Wim Tjibbo TEL ,  Daan Maurits SLOTBOOM ,  Vadim Yourievich TIMOSHKOV ,  Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN ,  Boris MENCHTCHIKOV ,  Simon Philip Spencer HASTINGS ,  Cyrus Emil TABERY ,  Maxime Philippe Frederic GENIN ,  Youping ZHANG ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG

IPC: G05B19/418

Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：US20210255547A1

公开(公告)日：2021-08-19

申请号：US16973395

申请日：2019-05-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jeroen Van Dongen ,  Wim Tjibbo TEL ,  Sarathi ROY ,  Yichen ZHANG ,  Andrea CAVALLI ,  Bart Laurens SJENITZER ,  Simon Philip Spencer HASTINGS

IPC: G03F7/20

Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.

公开(公告)号：US20210088917A1

公开(公告)日：2021-03-25

申请号：US16772022

申请日：2018-12-07

Applicant: ASML Netherlands B.V.

Inventor： Cyrus Emil TABERY ,  Simon Hendrik Celine VAN GORP ,  Simon Philip Spencer HASTINGS ,  Brennan PETERSON

IPC: G03F7/20 ,  H01L21/66 ,  H01L23/544

Abstract: A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method.

公开(公告)号：US20220252988A1

公开(公告)日：2022-08-11

申请号：US17603870

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  David Frans Simon DECKERS ,  Simon Philip Spencer HASTINGS ,  Jeffrey Thomas ZIEBARTH ,  Samee Ur REHMAN ,  Davit HARUTYUNYAN ,  Chenxi LIN ,  Yana CHENG

IPC: G03F7/20 ,  G03F1/36

Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.

公开(公告)号：US20210325788A1

公开(公告)日：2021-10-21

申请号：US17363057

申请日：2021-06-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander YPMA ,  Cyrus Emil TABERY ,  Simon Hendrik Celine VAN GORP ,  Chenxi LIN ,  Dag SONNTAG ,  Hakki Ergün CEKLI ,  Ruben ALVAREZ SANCHEZ ,  Shih-Chin LIU ,  Simon Philip Spencer HASTINGS ,  Boris MENCHTCHIKOV ,  Christiaan Theodoor DE RUITER ,  Peter TEN BERGE ,  Michael James LERCEL ,  Wei DUAN ,  Pierre-Yves Jerome Yvan GUITTET

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：US20220026810A1

公开(公告)日：2022-01-27

申请号：US17297171

申请日：2019-11-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Nicolaas Petrus Marcus BRANTJES ,  Matthijs COX ,  Boris MENCHTCHIKOV ,  Cyrus Emil TABERY ,  Youping ZHANG ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG ,  Simon Philip Spencer HASTINGS ,  Maxim Philippe Frederic GENIN

IPC: G03F7/20 ,  G03F9/00 ,  G05B13/02

Abstract: A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.

公开(公告)号：US20210389677A1

公开(公告)日：2021-12-16

申请号：US17295193

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi LIN ,  Cyrus Emil TABERY ,  Hakki Ergün CEKLI ,  Simon Philip Spencer HASTINGS ,  Boris MENCHTCHIKOV ,  Yi ZOU ,  Yana CHENG ,  Maxime Philippe Frederic GENIN ,  Tzu-Chao CHEN ,  Davit HARUTYUNYAN ,  Youping ZHANG

IPC: G03F7/20 ,  G05B13/02 ,  G05B19/418 ,  H01L21/66

Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：US20170248852A1

公开(公告)日：2017-08-31

申请号：US15438364

申请日：2017-02-21

Applicant: ASML Netherlands B.V.

Inventor： Patrick WARNAAR ,  Simon Philip Spencer HASTINGS ,  Alberto DA COSTA ASSAFRAO ,  Lukasz Jerzy MACHT

IPC: G03F7/20

Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.