公开(公告)号：US20220351932A1

公开(公告)日：2022-11-03

申请号：US17633556

申请日：2020-08-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Jian ZHANG ,  Ning YE ,  Zhiwen KANG ,  Yixiang WANG

IPC: H01J37/02 ,  G02B27/09

Abstract: A system and a method for manipulating a beam of an Advanced Charge Controller module in different planes in an e-beam system are provided. Some embodiments of the system include a lens system configured to manipulate a beam in the tangential plane and the sagittal plane such that the beam spot is projected onto the wafer with high luminous energy. Some embodiments of the system include a lens system comprising at least two cylindrical lens.

公开(公告)号：US20230395352A1

公开(公告)日：2023-12-07

申请号：US18362757

申请日：2023-07-31

Applicant: ASML Netherlands B.V.

Inventor： Ning YE ,  Jun JIANG ,  Jian ZHANG ,  Yixiang WANG

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US20220189733A1

公开(公告)日：2022-06-16

申请号：US17553357

申请日：2021-12-16

Applicant: ASML Netherlands B.V.

Inventor： Ning YE ,  Jun JIANG ,  Jian ZHANG ,  Yixiang WANG

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US20250166955A1

公开(公告)日：2025-05-22

申请号：US18840309

申请日：2023-01-31

Applicant: ASML Netherlands B.V.

Inventor： Ning YE ,  Jian ZHANG ,  Zhonghua DONG ,  Datong ZHANG

IPC: H01J37/02 ,  H01J37/28

Abstract: A system and a method for controlling a beam spot of an Advanced Charge Controller module in an electron beam system. The Advanced Charge Controller module includes a MEMS mirror configured to steer and shape the beam in order to perform beam alignment, increase the power density at an area of interest and modulate the power density in real time.

公开(公告)号：US20220375715A1

公开(公告)日：2022-11-24

申请号：US17771761

申请日：2020-10-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Jian ZHANG ,  Ning YE ,  Yixiang WANG ,  Jie FANG

IPC: H01J37/22 ,  H01J37/28

Abstract: An apparatus for and a method of inspecting a substrate in which a charged particle beam is arranged to impinge on a portion of the substrate and a first light beam having a first wavelength and a second light beam having a second wavelength different from the first wavelength are also arranged to impinge on the portion of the substrate.

公开(公告)号：US20220270849A1

公开(公告)日：2022-08-25

申请号：US17638765

申请日：2020-08-26

Applicant: ASML Netherlands B.V.

Inventor： Jun JIANG ,  Chih-Yu JEN ,  Ning YE ,  Jian ZHANG

IPC: H01J37/28 ,  G01R31/307

Abstract: A charged particle beam system may include a primary source, a secondary source, and a controller. The primary source may be configured to emit a charged particle beam along an optical axis onto a region of a sample. The secondary source may be configured to irradiate the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam onto a region of a sample, irradiating the region of the sample with a secondary source, and changing a parameter of an output of the secondary source. A method of detecting defects may include inspecting a sample, generating a first defect distribution, and generating a second defect distribution.