公开(公告)号：WO2022184578A1

公开(公告)日：2022-09-09

申请号：PCT/EP2022/054790

申请日：2022-02-25

Applicant: ASML NETHERLANDS B.V.

Inventor： SER, Jung Hoon ,  PARK, Sungwoon ,  LEI, Xin ,  JEONG, Jinwoong ,  ZHAO, Rongkuo ,  HSU, Duan-Fu, Stephen ,  LI, Xiaoyang

IPC: G03F1/70 ,  G03F7/20

Abstract: Methods for configuring a patterning process based on results of another patterning process is described. The method includes obtaining a first set of contours by simulating a first patterning process using a design layout in a first orientation. The contours satisfy a design specification associated with the design layout and correspond to a first set of process window conditions. A second patterning process is configured based on a second orientation of the design layout, the first set of process window conditions and first set of contours. The second patterning process is associated with one or more design variables (e.g., source, mask) that affect a second set of contours. The configuring includes adjusting one or more design variables until the second set of contours are within a desired matching threshold with the first set of contours.