公开(公告)号：WO2023285071A1

公开(公告)日：2023-01-19

申请号：PCT/EP2022/066586

申请日：2022-06-17

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  JIANG, Xiaohui ,  JIA, Ningning ,  LIU, Gengxin

IPC: G03F7/20 ,  G03F1/36

Abstract: Apparatuses, systems, and methods for selecting a subset of critical patterns from a plurality of patterns of a design layout. In some embodiments, the method comprising accessing diffraction order data based on the plurality of patterns that represent features to be formed on at least a portion of a wafer, the diffraction order data including a plurality of peaks corresponding to the plurality of patterns. The method also comprises identifying a subset of representative peaks from the plurality of peaks according to one or more grouping criteria, comprising identifying a first representative peak that covers another peak colinear with the first representative peak, wherein the first representative peak is a discrete peak having a frequency that is an integer multiple of frequency of another discrete peak. The method further comprises selecting the subset of critical patterns corresponding to the subset of representative peaks.

公开(公告)号：WO2020078844A1

公开(公告)日：2020-04-23

申请号：PCT/EP2019/077587

申请日：2019-10-11

Applicant: ASML NETHERLANDS B.V. ,  CYMER, LLC

Inventor： CONLEY, Willard, Earl ,  THORNES, Joshua, Jon ,  HSU, Duan-Fu, Stephen ,  RECHTSTEINER, Gregory, Allen

IPC: G03F7/20

Abstract: Systems, methods, and computer programs for increasing a depth of focus for a lithography system are disclosed. In one aspect, a method includes providing an optical spectrum, a mask pattern, and a pupil design, that together are configured to provide the lithography system with a depth of focus. The method also includes iteratively varying the optical spectrum and an assist feature in the mask pattern to provide a modified optical spectrum and a modified mask pattern that increases the depth of focus. The method further includes configuring a component of the lithography system based on the modified optical spectrum and the modified mask pattern that increases the depth of focus.

公开(公告)号：WO2019158682A1

公开(公告)日：2019-08-22

申请号：PCT/EP2019/053785

申请日：2019-02-15

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  LIU, Jingjing ,  HOWELL, Rafael C. ,  PENG, Xingyue

IPC: G03F1/36 ,  G06F17/50

Abstract: Described herein is a method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, (ii) an initial continuous tone image of the patterning device corresponding to the target pattern, (iii) a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and (iv) a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating, by a hardware computer system, a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.

公开(公告)号：WO2016184664A1

公开(公告)日：2016-11-24

申请号：PCT/EP2016/059655

申请日：2016-04-29

Applicant: ASML NETHERLANDS B.V.

Inventor： ZOU, Yi ,  SU, Jing ,  SOCHA, Robert ,  SPENCE, Christopher, Alan ,  HSU, Duan-Fu, Stephen

IPC: G03F7/20 ,  G06F17/50

CPC classification number: G03F7/70433 ,  G03F7/70466

Abstract: Disclosed herein is a computer-implemented method comprising: obtaining a sub-layout comprising an area that is a performance limiting spot; adjusting colors of patterns in the area; determining whether the area is still performance limiting spot. Another method comprises: decomposing patterns in a design layout into multiple sub-layouts; determining for at least one area in one of the sub- layouts, the likelihood of that a figure of merit is beyond its allowed range; if the likelihood is above a threshold, that one sub-layout has a performance limiting spot. Yet another method disclosed comprises: obtaining a design layout comprising a first group of patterns and a second group of patterns, wherein colors of the first group of patterns are not allowed to change and colors of the second group of patterns are allowed to change; co-optimizing at least the first group of patterns, the second group of patterns and a source of a lithographic apparatus.

Abstract translation: 本文公开了一种计算机实现的方法，包括：获得包括作为性能限制点的区域的子布局; 调整该区域的图案颜色; 确定该区域是否仍然是性能限制点。 另一种方法包括：将设计布局中的图案分解为多个子布局; 确定一个子布局中的至少一个区域，品质因数超出其允许范围的可能性; 如果可能性高于阈值，则该子布局具有性能限制点。 公开的另一种方法包括：获得包括第一组图案和第二组图案的设计布局，其中第一组图案的颜色不允许改变，并且允许第二组图案的颜色改变; 共同优化至少第一组图案，第二组图案和光刻设备的来源。

公开(公告)号：WO2015139951A1

公开(公告)日：2015-09-24

申请号：PCT/EP2015/054448

申请日：2015-03-03

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  JIA, Jianjun ,  LIU, Xiaofeng ,  ZHANG, Youping

IPC: G03F7/20 ,  G03F1/36

CPC classification number: G03F7/7055 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705

Abstract: Disclosed herein is a computer-implemented method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. The multi-variable cost function may be a function of one or more pattern shift errors. Reconfiguration of the characteristics may be under one or more constraints on the one or more pattern shift errors.

Abstract translation: 本文公开了一种计算机实现的方法，用于改进用于使用光刻投影设备将设计布局的一部分成像到基板上的光刻工艺，所述方法包括：计算作为特征的多个设计变量的多变量成本函数 并且通过调整设计变量来重新配置光刻工艺的特性，直到满足预定的终止条件。 多变量成本函数可以是一个或多个模式偏移误差的函数。 特征的重新配置可能在一个或多个模式偏移误差的一个或多个约束下。

公开(公告)号：WO2022184578A1

公开(公告)日：2022-09-09

申请号：PCT/EP2022/054790

申请日：2022-02-25

Applicant: ASML NETHERLANDS B.V.

Inventor： SER, Jung Hoon ,  PARK, Sungwoon ,  LEI, Xin ,  JEONG, Jinwoong ,  ZHAO, Rongkuo ,  HSU, Duan-Fu, Stephen ,  LI, Xiaoyang

IPC: G03F1/70 ,  G03F7/20

Abstract: Methods for configuring a patterning process based on results of another patterning process is described. The method includes obtaining a first set of contours by simulating a first patterning process using a design layout in a first orientation. The contours satisfy a design specification associated with the design layout and correspond to a first set of process window conditions. A second patterning process is configured based on a second orientation of the design layout, the first set of process window conditions and first set of contours. The second patterning process is associated with one or more design variables (e.g., source, mask) that affect a second set of contours. The configuring includes adjusting one or more design variables until the second set of contours are within a desired matching threshold with the first set of contours.

公开(公告)号：WO2022135953A1

公开(公告)日：2022-06-30

申请号：PCT/EP2021/084967

申请日：2021-12-09

Applicant: ASML NETHERLANDS B.V. ,  CYMER, LLC.

Inventor： CONLEY, Willard, Earl ,  HSU, Duan-Fu, Stephen ,  THORNES, Joshua, Jon ,  BASELMANS, Johannes, Jacobus, Matheus

IPC: G03F7/20

Abstract: A method for improving a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus. The method includes computing a multi-variable cost function that is a function of: (i) a plurality of design variables that affect characteristics of the lithographic process and (ii) a radiation bandwidth of a radiation source of the lithographic apparatus; and reconfiguring one or more of the characteristics (e.g., EPE, image contrast, resist, etc.) of the lithographic process by adjusting one or more of the design variables (e.g., source, mask layout, bandwidth, etc.) until a termination condition is satisfied. The termination condition includes a speckle characteristic (e.g., a speckle contrast) maintained within a speckle specification associated with the radiation source and also maintaining an image contrast associated with the lithographic process within a desired range. The speckle characteristic being a function of the radiation bandwidth.

公开(公告)号：WO2021249720A1

公开(公告)日：2021-12-16

申请号：PCT/EP2021/062795

申请日：2021-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： PENG, Xingyue ,  SHI, Zhan ,  HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  LIU, Gerui

IPC: G03F7/20 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70891

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process is described. Scanner aberration impact modeling may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model comprises a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form in lieu of a full simulation without involving calculation of an aerial image or a representation thereof.

公开(公告)号：WO2018153872A1

公开(公告)日：2018-08-30

申请号：PCT/EP2018/054175

申请日：2018-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  LIU, Jingjing

IPC: G03F1/24 ,  G03F1/36 ,  G03F1/38

Abstract: A patterning device (100), includes: an absorber layer (106) on a patterning device substrate (102); and a reflective or transmissive layer (104) on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature (112) and an attenuated sub-resolution assist feature (110) paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.

公开(公告)号：WO2016128392A1

公开(公告)日：2016-08-18

申请号：PCT/EP2016/052714

申请日：2016-02-09

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen

IPC: G03F7/20 ,  G03F1/70 ,  G06F17/50

CPC classification number: G03F7/705 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70666

Abstract: Disclosed herein is a computer-implemented method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising: computing a multi-variable cost function, the multi-variable cost function being a function of a stochastic variation of a characteristic of an aerial image or a resist image, or a function of a variable that is a function of the stochastic variation or that affects the stochastic variation, the stochastic variation being a function of a plurality of design variables that represent characteristics of the lithographic process; and reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables until a certain termination condition is satisfied.

Abstract translation: 本文公开了一种计算机实现的方法，用于改进使用光刻投影设备将设计布局的一部分成像到基板上的光刻工艺，该方法包括：计算多变量成本函数，多变量成本函数为 空间图像或抗蚀剂图像的特性的随机变化的函数，或作为随机变化的函数或影响随机变化的变量的函数，随机变化是多个设计变量的函数 代表光刻工艺的特点; 以及通过调整一个或多个设计变量来重新配置光刻处理的一个或多个特性，直到满足某个终止条件。