公开(公告)号：WO2015067443A1

公开(公告)日：2015-05-14

申请号：PCT/EP2014/072035

申请日：2014-10-14

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN SETTEN, Eelco ,  DAVYDOVA, Natalia, Viktorovna ,  PSARA, Eleni ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F1/24 ,  G03F1/44 ,  G03F7/20 ,  G03F1/38 ,  G03F1/22 ,  G03F1/70

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/38 ,  G03F1/44 ,  G03F1/68 ,  G03F1/70 ,  G03F7/2004 ,  G03F7/70433 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by 90º, exposed again, rotated by a further 90º, exposed, etc. The printed features are measured to determine characteristics of the mask. The invention can be used to model shadowing effects of EUV masks with thick absorbers illuminated at an angle.

Abstract translation: 表征平版印刷掩模类型的方法使用其上具有不同取向的线性特征的测试图案单元的掩模。 面罩暴露，旋转90度，再次暴露，旋转另外90度，暴露等。测量打印的特征以确定面具的特性。 本发明可用于模拟以一角度照射的厚吸收体的EUV掩模的遮蔽效果。