公开(公告)号：WO2020074356A1

公开(公告)日：2020-04-16

申请号：PCT/EP2019/076793

申请日：2019-10-03

Applicant: ASML NETHERLANDS B.V.

Inventor： TROOST, Kars, Zeger ,  VAN SETTEN, Eelco ,  HSU, Duan-Fu, Stephen

IPC: G03F1/70 ,  G03F7/20

Abstract: Described herein is a method for source mask optimization with a lithographic projection apparatus. The lithographic projection apparatus comprises an illumination source and projection optics configured to image a mask design layout onto a substrate. The method comprises determining a multi-variable source mask optimization function using a plurality of tunable design variables for the illumination source, the projection optics, and the mask design layout. The multi-variable source mask optimization function accounts for imaging variation across different positions in an exposure slit corresponding to different stripes of the mask design layout exposed by the same slit position of the exposure apparatus. The method comprises iteratively adjusting the plurality of tunable design variables in the multi-variable source mask optimization function until a termination condition is satisfied.

公开(公告)号：WO2015067443A1

公开(公告)日：2015-05-14

申请号：PCT/EP2014/072035

申请日：2014-10-14

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN SETTEN, Eelco ,  DAVYDOVA, Natalia, Viktorovna ,  PSARA, Eleni ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F1/24 ,  G03F1/44 ,  G03F7/20 ,  G03F1/38 ,  G03F1/22 ,  G03F1/70

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/38 ,  G03F1/44 ,  G03F1/68 ,  G03F1/70 ,  G03F7/2004 ,  G03F7/70433 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by 90º, exposed again, rotated by a further 90º, exposed, etc. The printed features are measured to determine characteristics of the mask. The invention can be used to model shadowing effects of EUV masks with thick absorbers illuminated at an angle.

Abstract translation: 表征平版印刷掩模类型的方法使用其上具有不同取向的线性特征的测试图案单元的掩模。 面罩暴露，旋转90度，再次暴露，旋转另外90度，暴露等。测量打印的特征以确定面具的特性。 本发明可用于模拟以一角度照射的厚吸收体的EUV掩模的遮蔽效果。

公开(公告)号：WO2019048147A1

公开(公告)日：2019-03-14

申请号：PCT/EP2018/071103

申请日：2018-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： DE WINTER, Laurentius, Cornelius ,  STOLK, Roland, Pieter ,  STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  HINNEN, Paul, Christiaan ,  JOCHEMSEN, Marinus ,  THEEUWES, Thomas ,  VAN SETTEN, Eelco

IPC: G03F7/20 ,  G03F1/24 ,  G21K1/06

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus- dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

公开(公告)号：WO2018219572A1

公开(公告)日：2018-12-06

申请号：PCT/EP2018/061122

申请日：2018-05-02

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DE KERKHOF, Marcus, Adrianus ,  DE WINTER, Laurentius, Cornelius ,  VAN SETTEN, Eelco

IPC: G03F1/26 ,  G03F1/24 ,  G03F7/20

Abstract: A patterning device for use with a lithographic apparatus, the device comprising an absorber portion configured to absorb incident radiation and to reflect a portion of incident radiation, the absorber portion comprising a first layer and a second layer, the first layer of the absorber portion comprising a first material that is different from a second material of the second layer of the absorber portion; a reflector portion arranged beneath the absorber portion, the reflector portion being configured to reflect incident radiation; and a phase tune portion arranged between the reflector portion and the absorber portion, the phase tune portion being configured to induce a phase shift between the radiation reflected by the reflector portion and the portion of radiation reflected by the absorber portion such that the radiation reflected by the reflector portion destructively interferes with the portion of radiation reflected by the absorber portion.