Abstract:
A multilayer optics is configured for reflection of radiation having a wavelength λ, the multilayer optics comprising a multilayer stack (300) of alternating layer pairs, wherein each pair thereof comprises a first/second layer of thickness d1/d2, wherein a periodic length p=d1+d2 of each pair of alternating layers satisfies: m λ = 2 p sinΘ, wherein m = 1, 2, 3, etc. is an integer representing the order of the Bragg diffraction peak and Θ is the angle between an incident radiation and a scattering plane of the multilayer optics; a protective region (310) comprising pairs of alternating protective layers, each pair thereof comprising a first/second protective layer of thickness ds1/ds2, wherein a periodic length ps=ds1+ds2 of each pair of alternating protective layers satisfies: m λ = 2 ps sinΘ and ps = p N, wherein N is an integer equal or larger than 2. The multilayer mirror may optionally be provided with a capping layer (320). There is further disclosed an apparatus for extreme ultraviolet lithography comprising: a vacuum container comprising an optical element having an optically active surface, a gas supply system comprising a source of an anti-blistering gaseous mixture, an exhauster configured to exhaust gas in said vacuum container; wherein the gas supply system is arranged to provide the anti-blistering gaseous mixture at the optically active surface of the optical element, and wherein the anti-blistering gaseous mixture comprises an oxygen containing gas compound at a partial pressure ranging from 5e-8 to 1e-4 mbar.
Abstract:
A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane (44) is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles (54) through the membrane. A particle trapping structure (52) is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles (58) from inside the chamber to outside the chamber.
Abstract:
In an embodiment, a lithographic apparatus is disclosed that includes a modulator (102, 112) to modulate a plurality of beams according to a desired pattern and a donor structure (208) on to which the modulated beams impinge. The donor structure configured such that the impinging modulated beams cause a donor material to be transferred from the donor structure to a substrate (114).
Abstract:
In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator includes a deflector to displace the plurality of beams with respect to an exposure area.