公开(公告)号：WO2020074356A1

公开(公告)日：2020-04-16

申请号：PCT/EP2019/076793

申请日：2019-10-03

Applicant: ASML NETHERLANDS B.V.

Inventor： TROOST, Kars, Zeger ,  VAN SETTEN, Eelco ,  HSU, Duan-Fu, Stephen

IPC: G03F1/70 ,  G03F7/20

Abstract: Described herein is a method for source mask optimization with a lithographic projection apparatus. The lithographic projection apparatus comprises an illumination source and projection optics configured to image a mask design layout onto a substrate. The method comprises determining a multi-variable source mask optimization function using a plurality of tunable design variables for the illumination source, the projection optics, and the mask design layout. The multi-variable source mask optimization function accounts for imaging variation across different positions in an exposure slit corresponding to different stripes of the mask design layout exposed by the same slit position of the exposure apparatus. The method comprises iteratively adjusting the plurality of tunable design variables in the multi-variable source mask optimization function until a termination condition is satisfied.

公开(公告)号：WO2008110358A1

公开(公告)日：2008-09-18

申请号：PCT/EP2008/001980

申请日：2008-03-12

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING NV ,  TROOST, Kars, Zeger ,  HINTERSTEINER, Jason, Douglas ,  CUPERUS, Minne ,  CHILOV, Kamen, Hristov ,  ZIMMERMAN, Richard, Carl ,  VAN T WESTEINDE, Ronnie

Inventor： TROOST, Kars, Zeger ,  HINTERSTEINER, Jason, Douglas ,  CUPERUS, Minne ,  CHILOV, Kamen, Hristov ,  ZIMMERMAN, Richard, Carl ,  VAN T WESTEINDE, Ronnie

IPC: G03F7/20

CPC classification number: G03F7/70791 ,  G03F7/70291 ,  G03F7/70358 ,  G03F7/70475 ,  G03F7/70508

Abstract: A lithographic system is provided in which an extent of overlap between pattern sections is adjusted in order to match a size of a pattern section to a size of a repeating portion of the pattern to be formed.

Abstract translation: 提供了一种光刻系统，其中调整图案部分之间的重叠程度，以便将图案部分的尺寸与要形成的图案的重复部分的尺寸相匹配。