公开(公告)号：WO2019162280A1

公开(公告)日：2019-08-29

申请号：PCT/EP2019/054110

申请日：2019-02-19

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN OOSTEN, Anton, Bernhard ,  VAENKATESAN, Vidya ,  WILEY, James, Norman ,  PLUG, Reinder, Teun

IPC: G03F7/20 ,  G03F1/84 ,  G03F1/00

Abstract: Described herein is a method for inspection of a patterning device. The method includes obtaining (i) patterning device apparatus data of a patterning device making process, (ii) a patterning device substrate map based on the patterning device apparatus data, and (iii) predicted process window limiting pattern locations corresponding to the patterning device based on the patterning device substrate map, and based on the process window limiting pattern locations, guiding, by a hardware computer system, a patterning device inspection apparatus to the process window limiting pattern locations for defect inspection.

公开(公告)号：EP4550047A1

公开(公告)日：2025-05-07

申请号：EP23207692.7

申请日：2023-11-03

Applicant: ASML Netherlands B.V.

Inventor： SCHOUMANS, Nicole ,  VAENKATESAN, Vidya ,  VAN LEEST, Adriaan, Johan

IPC: G03F7/00

Abstract: There is provided a method for determining angular information of one or more structures comprising: illuminating a first surface portion of said one or more structures with an illumination beam and measuring radiation scattered therefrom to determine a first signal; determining a first asymmetry metric value describing degree of asymmetry of the first signal; and determining the angular information based on at least the first asymmetry metric value, wherein the illumination beam comprises a spot size smaller in at least one dimension of a smallest element of the first surface portion.