公开(公告)号：WO2014016056A1

公开(公告)日：2014-01-30

申请号：PCT/EP2013/062630

申请日：2013-06-18

Applicant: ASML NETHERLANDS B.V.

Inventor： CRAMER, Hugo ,  SOCHA, Robert ,  TINNEMANS, Patricius ,  VAESSEN, Jean-Pierre

IPC: G03F7/20

CPC classification number: G01N23/203 ,  G03F7/70058 ,  G03F7/70625 ,  H01J37/26

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

Abstract translation: 检查方法确定基板图案的轮廓参数的值。 产生具有基线图案目标（BP）的基准基底，其具有通过轮廓参数描述的轮廓，例如CD（中值临界尺寸），SWA（侧壁角）和RH（抗蚀剂高度）。 散射法用于获得第一和第二个目标的第一和第二信号。 使用贝叶斯差分成本函数，基于基线瞳孔和扰动瞳孔之间的差异以及瞳孔对图形轮廓参数的依赖性来计算微分图案轮廓参数的值。 例如，在基线工艺和用于光刻工艺的稳定性控制的扰动过程之间测量差异。 前馈差分堆栈参数也是通过与模式目标相同的基板上的堆叠目标的观察来计算的。