公开(公告)号：WO2013117435A1

公开(公告)日：2013-08-15

申请号：PCT/EP2013/051308

申请日：2013-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/70275 ,  G03F7/70291 ,  G03F7/70391 ,  G03F7/704 ,  G03F7/70516 ,  G03F7/70525

Abstract: There is disclosed a lithography or exposure apparatus and system, a method of calibrating a lithography or exposure apparatus, and a device manufacturing method. In an embodiment, there is provided an exposure system including a first exposure apparatus and a second exposure apparatus, wherein a data processing device of each of the first and second apparatuses is configured to calculate a control signal using a response function; the combined performance of the programmable patterning device and projection system of each of the first and second apparatuses differs, at least due to manufacturing error; and the response function used by the first apparatus is identical to the response function used by the second apparatus.

Abstract translation: 公开了光刻或曝光装置和系统，校准光刻或曝光装置的方法以及装置制造方法。 在一个实施例中，提供了一种包括第一曝光装置和第二曝光装置的曝光系统，其中第一和第二装置中的每一个的数据处理装置被配置为使用响应函数来计算控制信号; 至少由于制造误差，第一和第二装置中的可编程图案形成装置和投影系统的组合性能不同。 并且第一装置使用的响应功能与第二装置使用的响应功能相同。

公开(公告)号：WO2013098053A1

公开(公告)日：2013-07-04

申请号：PCT/EP2012/074507

申请日：2012-12-05

Applicant: ASML NETHERLANDS B.V.

Inventor： BUTLER, Hans ,  BLEEKER, Arno ,  HENNUS, Pieter ,  HOEKS, Martinus ,  HOL, Sven, Antoin, Johan ,  VAN DER SCHOOT, Harmen ,  SLAGHEKKE, Bernardus ,  TINNEMANS, Patricius ,  VAN DER WIJST, Marc ,  ZAAL, Koen ,  CADEE, Theodorus, Petrus, Maria ,  BEERENS, Ruud ,  FISCHER, Olof ,  AANGENENT, Wouter ,  BOSCH, Niels, Johannes, Maria

IPC: G03F7/20

CPC classification number: G03F7/70258 ,  G03F7/70275 ,  G03F7/70366 ,  G03F7/70391 ,  G03F7/704 ,  G03F7/70558 ,  G03F7/70816 ,  G03F7/709

Abstract: An exposure apparatus (1) including a projection system (12, 14) configured to project a plurality of radiation beams onto a target; a movable frame (8) that is at least rotatable around an axis (10); and an actuator system (11) configured to displace the movable frame to an axis away from an axis corresponding to the geometric center of the movable frame and to cause the frame to rotate around an axis through the center of mass of the frame.

Abstract translation: 一种曝光装置（1），包括被配置为将多个辐射束投影到目标上的投影系统（12,14） 至少可绕轴线（10）旋转的可移动框架（8）; 以及致动器系统（11），其构造成将可移动框架移动到远离与可移动框架的几何中心对应的轴线的轴线上，并使框架围绕通过框架的质心的轴线旋转。

公开(公告)号：WO2014180684A1

公开(公告)日：2014-11-13

申请号：PCT/EP2014/058502

申请日：2014-04-25

Applicant: ASML NETHERLANDS B.V.

Inventor： DEN BOEF, Arie, Jeffrey ,  MATHIJSSEN, Simon, ,  TINNEMANS, Patricius

IPC: G03F9/00

CPC classification number: G03F7/70141 ,  G01B11/272 ,  G03F9/7069 ,  G03F9/7088 ,  G03F9/7092

Abstract: Disclosed is an alignment sensor comprising, and associated method comprising an illumination source, such as a white light source, having an illumination grating operable to diffract higher order radiation at an angle dependent on wavelength; and illumination optics to deliver the diffracted radiation onto an alignment grating from at least two opposite directions. For every component wavelength incident on the alignment grating, and for each direction, the zeroth diffraction order of radiation incident from one of the two opposite directions overlaps a higher diffraction order of radiation incident from the other direction. This optically amplifies the higher diffraction orders with the overlapping zeroth orders.

Abstract translation: 公开了一种对准传感器，包括和相关联的方法，其包括诸如白光源的照明源，具有可以以取决于波长的角度衍射高阶辐射的照明光栅; 和照明光学器件，以将衍射辐射从至少两个相反的方向传送到对准光栅上。 对于入射到对准光栅上的每个分量波长，并且对于每个方向，从两个相反方向之一入射的辐射的零级衍射级与从另一方向入射的较高的辐射衍射级重叠。 这种光学放大了具有重叠零级的较高的衍射级。

公开(公告)号：WO2013107595A1

公开(公告)日：2013-07-25

申请号：PCT/EP2012/076319

申请日：2012-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius ,  BLEEKER, Arno

IPC: G03F7/20

CPC classification number: G03F7/70058 ,  G03F7/70358 ,  G03F7/70366 ,  G03F7/70391 ,  G03F7/704 ,  G03F7/70525 ,  G03F7/70558

Abstract: A lithographic or exposure apparatus (1) has a projection system (12, 14, 18) and a controller (500). The projection system includes a stationary part (12) and a moving part (14, 18). The projection system is configured to project a plurality of radiation beams onto locations on a target. The locations are selected based on a pattern. The controller is configured to control the apparatus to operate in a first mode or a second mode. In the first mode the projection system delivers a first amount of energy to the selected locations. In the second mode the projection system delivers a second amount of energy to the selected locations. The second amount of energy is greater than the first amount of energy.

Abstract translation: 光刻或曝光设备（1）具有投影系统（12,14,18）和控制器（500）。 投影系统包括固定部分（12）和移动部分（14,18）。 投影系统被配置为将多个辐射束投影到目标上的位置上。 基于模式选择位置。 控制器被配置为控制设备以第一模式或第二模式操作。 在第一模式中，投影系统向选定位置传送第一量的能量。 在第二模式中，投影系统将第二量的能量传送到所选择的位置。 第二量的能量大于第一能量。

公开(公告)号：WO2014068116A1

公开(公告)日：2014-05-08

申请号：PCT/EP2013/072949

申请日：2013-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius ,  DEN BOEF, Arie, Jeffrey ,  MATHIJSSEN, Simon, Gijsbert, Josephus

IPC: G03F9/00

CPC classification number: G03F9/7069 ,  G03F9/7088

Abstract: A lithographic apparatus includes a sensor, such as an alignment sensor including a self-referencing interferometer, configured to determine the position of an alignment target comprising a periodic structure. An illumination optical system focuses radiation of different colors and polarizations into a spot which scans the structure. Multiple position-dependent signals are detected and processed to obtain multiple candidate position measurements. Asymmetry of the structure is calculated by comparing the multiple position- dependent signals. The asymmetry measurement is used to improve accuracy of the position read by the sensor. Additional information on asymmetry may be obtained by an asymmetry sensor receiving a share of positive and negative orders of radiation diffracted by the periodic structure to produce a measurement of asymmetry in the periodic structure.

Abstract translation: 光刻设备包括传感器，诸如包括自参考干涉仪的对准传感器，其被配置为确定包括周期性结构的对准目标的位置。 照明光学系统将不同颜色和偏振的辐射聚焦到扫描结构的光斑中。 检测并处理多个与位置相关的信号以获得多个候选位置测量。 通过比较多个位置相关信号来计算结构的不对称性。 不对称测量用于提高传感器读取位置的精度。 通过不对称传感器可以获得关于不对称性的附加信息，该不对称传感器接收由周期性结构衍射的辐射的正数和负数的一部分，以产生周期性结构中的不对称性的测量。

公开(公告)号：WO2014016056A1

公开(公告)日：2014-01-30

申请号：PCT/EP2013/062630

申请日：2013-06-18

Applicant: ASML NETHERLANDS B.V.

Inventor： CRAMER, Hugo ,  SOCHA, Robert ,  TINNEMANS, Patricius ,  VAESSEN, Jean-Pierre

IPC: G03F7/20

CPC classification number: G01N23/203 ,  G03F7/70058 ,  G03F7/70625 ,  H01J37/26

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

Abstract translation: 检查方法确定基板图案的轮廓参数的值。 产生具有基线图案目标（BP）的基准基底，其具有通过轮廓参数描述的轮廓，例如CD（中值临界尺寸），SWA（侧壁角）和RH（抗蚀剂高度）。 散射法用于获得第一和第二个目标的第一和第二信号。 使用贝叶斯差分成本函数，基于基线瞳孔和扰动瞳孔之间的差异以及瞳孔对图形轮廓参数的依赖性来计算微分图案轮廓参数的值。 例如，在基线工艺和用于光刻工艺的稳定性控制的扰动过程之间测量差异。 前馈差分堆栈参数也是通过与模式目标相同的基板上的堆叠目标的观察来计算的。

公开(公告)号：WO2013083383A1

公开(公告)日：2013-06-13

申请号：PCT/EP2012/072765

申请日：2012-11-15

Applicant: ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius ,  MULCKHUYSE, Wouter

IPC: G03F7/20

CPC classification number: G03F7/70508 ,  G03F7/70291 ,  G03F7/70391 ,  G03F7/70558

Abstract: An exposure apparatus configured to project each of a plurality of radiation beams onto a respective location on a target, the plurality of radiation beams forming a desired dose pattern via a plurality of spot exposures, the nominal position of a characteristic point in the dose distribution of each of the spot exposures lying at points defining a first grid. The apparatus has, or is provided data from, a controller configured to: calculate a target intensity value for each of the plurality of radiation beams to expose the target to the desired dose pattern, the calculation using as input a rasterized representation of the desired dose pattern, the rasterized representation including a dose value defined at each of a plurality of points on a second grid, the first and second grids having the same geometry, and control the exposure apparatus to emit beams with the target intensity values.

Abstract translation: 一种曝光装置，被配置为将多个辐射束中的每一个投影到目标上的相应位置上，所述多个辐射束经由多个斑点曝光形成期望的剂量图案，剂量分布中特征点的标称位置 每个点曝光位于定义第一格栅的点上。 该装置具有或提供来自控制器的数据，该控制器被配置为：计算多个辐射束中的每一个的目标强度值以将目标暴露于期望的剂量模式，该计算使用所需剂量的光栅化表示 所述光栅化表示包括在第二格栅上的多个点中的每一个上限定的剂量值，所述第一和第二栅格具有相同的几何形状，并且控制所述曝光装置发射具有所述目标强度值的光束。

公开(公告)号：WO2013079316A2

公开(公告)日：2013-06-06

申请号：PCT/EP2012/072497

申请日：2012-11-13

Applicant: ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius ,  BONTEKOE, Marcel ,  PEETERS, Patrick

IPC: G03F7/20

CPC classification number: G06K15/1836 ,  G03F7/70291 ,  G03F7/70508

Abstract: A method for converting a vector-based representation of a desired device pattern for an exposure apparatus, a lithography or exposure apparatus, an apparatus and method to provide data to a programmable patterning device, and a device manufacturing method. In an embodiment, the method for converting outputs a rasterized representation of the desired dose pattern of radiation corresponding to the desired device pattern, wherein the vector-based representation comprises primitive data identifying one or more primitive patterns; and instance data identifying how at least a portion of the desired device pattern is formed from one or more instances of each identified primitive pattern, the method including forming a rasterized primitive of each primitive pattern identified in the primitive data, and forming the rasterized representation by storing each rasterized primitive in association with the instance data corresponding to that rasterized primitive.

Abstract translation: 一种用于转换用于曝光设备，光刻或曝光设备的期望设备图案的向量表示的方法，向可编程图案形成设备提供数据的设备和方法以及设备制造方法。 在一个实施例中，用于转换的方法输出对应于期望的设备图案的期望的辐射剂量图案的光栅化表示，其中基于矢量的表示包括识别一个或多个基本图案的原始数据; 以及实例数据，其识别如何从每个识别的原始图案的一个或多个实例形成期望的设备图案的至少一部分，该方法包括形成在原始数据中标识的每个基元图案的光栅化图元，以及通过 存储与对应于该光栅化图元的实例数据相关联的每个光栅化图元。

公开(公告)号：WO2013079285A1

公开(公告)日：2013-06-06

申请号：PCT/EP2012/071927

申请日：2012-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius ,  BLEEKER, Arno ,  LOOPSTRA, Erik

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/70191 ,  G03F7/70275 ,  G03F7/70291 ,  G03F7/70308 ,  G03F7/70391 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70525 ,  G03F9/7026

Abstract: The invention relates to intensity values for a plurality of beams used to irradiate a plurality of locations on a target are determined with reference to the position and/or rotation of the locations. Also provided is an associated lithographic or exposure apparatus, an associated device manufacturing method and an associated computer program.

Abstract translation: 参考位置的位置和/或旋转来确定本发明涉及用于照射目标上的多个位置的多个光束的强度值。 还提供了相关联的光刻或曝光装置，相关的装置制造方法和相关联的计算机程序。

公开(公告)号：EP2994798A1

公开(公告)日：2016-03-16

申请号：EP14724011.3

申请日：2014-04-25

Applicant: ASML Netherlands B.V.

Inventor： DEN BOEF, Arie, Jeffrey ,  MATHIJSSEN, Simon, ,  TINNEMANS, Patricius

IPC: G03F9/00

CPC classification number: G03F7/70141 ,  G01B11/272 ,  G03F9/7069 ,  G03F9/7088 ,  G03F9/7092

Abstract: Disclosed is an alignment sensor comprising, and associated method comprising an illumination source, such as a white light source, having an illumination grating operable to diffract higher order radiation at an angle dependent on wavelength; and illumination optics to deliver the diffracted radiation onto an alignment grating from at least two opposite directions. For every component wavelength incident on the alignment grating, and for each direction, the zeroth diffraction order of radiation incident from one of the two opposite directions overlaps a higher diffraction order of radiation incident from the other direction. This optically amplifies the higher diffraction orders with the overlapping zeroth orders.