公开(公告)号：WO2014198516A1

公开(公告)日：2014-12-18

申请号：PCT/EP2014/060625

申请日：2014-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： CRAMER, Hugo ,  DEN BOEF, Arie, Jeffrey ,  MEGENS, Henricus ,  VAN DER SCHAAR, Maurits ,  HUANG, Te-Chih

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70625

Abstract: A method of determining a critical-dimension-related property such as critical dimension (CD) or exposure dose. Process a wafer using a lithography apparatus in a lithographic process to produce periodic targets with different respective critical dimension biases on the wafer. Illuminate each of the targets. Measure intensity of radiation scattered by the targets. Recognize and extract each grating from the image. Determine a differential signal. Then determine the CD-related property, such as CD or exposure dose, based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use the determined critical-dimension-related property to control the lithography apparatus in the lithographic processing of subsequent wafers. In order to use just two CD biases, a calibration step may use measurements on a "golden wafer" (i.e. a reference wafer) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

Abstract translation: 确定关键尺寸相关属性（如临界尺寸（CD））或曝光剂量的方法。 在光刻工艺中使用光刻设备处理晶片以在晶片上产生具有不同相应临界尺寸偏差的周期性靶。 照亮每个目标。 测量目标散射的辐射强度。 从图像中识别和提取每个光栅。 确定差分信号。 然后基于差分信号，CD偏差和差分信号以这种周期性目标的1：1线间比比接近零的知识来确定CD相关属性，例如CD或曝光剂量。 使用确定的临界尺寸相关属性来控制后续晶片的光刻处理中的光刻设备。 为了仅使用两个CD偏移，校准步骤可以使用“金色晶片”（即，参考晶片）上的测量来确定每个CD对与已知CD的强度梯度。 或者，校准可以基于对CD的强度梯度的灵敏度的模拟。

公开(公告)号：WO2011045132A1

公开(公告)日：2011-04-21

申请号：PCT/EP2010/063378

申请日：2010-09-13

Applicant: ASML Netherlands B.V. ,  CRAMER, Hugo ,  MEGENS, Henricus

Inventor： CRAMER, Hugo ,  MEGENS, Henricus

IPC: G03F1/00 ,  G03F7/20 ,  G01N21/956 ,  G01N21/95

CPC classification number: G03F1/84 ,  G03F7/70625

Abstract: A system and method determines an approximate structure of an object on a substrate, by reconstruction. This may be applied, for example, in model based metrology of microscopic structures, for example to assess critical dimensions (CD) or overlay performance of a lithographic apparatus. A scatterometer is used to determine approximate structure of an object, such as a grating on a stack, on a substrate. The wafer substrate has an upper layer and an underlying layer. The substrate has a first scatterometry target region, comprising the grating on a stack object. The grating on a stack is made up of the upper and underlying layers. The upper layer is patterned with a periodic grating. The substrate further has a neighboring second scatterometry target region, where the upper layer is absent. The second region has just the unpatterned underlying layers.

Abstract translation: 系统和方法通过重建来确定衬底上的对象的近似结构。 这可以应用于例如基于模型的微观结构计量学，例如以评估光刻设备的临界尺寸（CD）或覆盖性能。 散射仪用于确定物体的近似结构，例如堆叠上的光栅，在衬底上。 晶片衬底具有上层和下层。 衬底具有第一散射测量目标区域，其包括在堆叠物体上的光栅。 堆叠上的光栅由上层和下层组成。 上层用周期性光栅图案化。 衬底还具有相邻的第二散射测量目标区域，其中上层不存在。 第二个地区只是没有图案的下层。

公开(公告)号：WO2010076232A2

公开(公告)日：2010-07-08

申请号：PCT/EP2009/067403

申请日：2009-12-17

Applicant: ASML NETHERLANDS B.V. ,  CRAMER, Hugo ,  HINNEN, Paul

Inventor： CRAMER, Hugo ,  HINNEN, Paul

IPC: G03F7/20

CPC classification number: G03F7/70683 ,  G03F1/14 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70641 ,  Y10T428/24802

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.

Abstract translation: 为了确定曝光装置是否输出正确的辐射剂量，并且曝光装置的投影系统正确地对准辐射，在掩模上使用测试图案将特定的标记印刷到基板上。 该标记可以通过诸如散射仪的检查装置来测量，以确定是否存在焦点，剂量和其它相关属性的误差。 测试图案被布置成使得可以通过测量使用掩模曝光的图案的性质容易地确定焦点和剂量的变化。 掩模的测试图案被布置成使得其在基板表面上产生标记图案。 标记图案包含具有至少两个可测量的侧壁角度的结构。 结构的侧壁角度之间的不对称性与来自曝光设备的曝光辐射的焦点（或散焦）有关。 由此可以通过测量印刷的标记图案结构的侧壁角度的不对称来确定散焦的程度。

公开(公告)号：WO2011151121A1

公开(公告)日：2011-12-08

申请号：PCT/EP2011/056999

申请日：2011-05-03

Applicant: ASML NETHERLANDS B.V. ,  ABEN, Marjan ,  CRAMER, Hugo ,  WRIGHT, Noelle ,  ALVAREZ-SANCHEZ, Ruben ,  SLOB, Martijn

Inventor： ABEN, Marjan ,  CRAMER, Hugo ,  WRIGHT, Noelle ,  ALVAREZ-SANCHEZ, Ruben ,  SLOB, Martijn

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70483 ,  G03F7/70491 ,  G03F7/705 ,  G03F7/70625

Abstract: Diffraction models and scatterometry are used to reconstruct a model of a microscopic structure (30) on a substrate. A plurality of candidate structures are defined, each represented by a plurality of parameters (p 1 , p 2 etc.)). A plurality of model diffraction signals are calculated by simulating illumination of each of said candidate structures. The structure is reconstructed by fitting one or more of said model diffraction signal to a signal detected from the structure (30). In the generation of the candidate structures, a model recipe is used in which parameters are designated either fixed or variable. Among the variable parameters, certain parameters are constrained to vary together in accordance with certain constraints (A), such as linear constraints. An optimized set of constraints (990), and therefore an optimized model recipe (994), is determined by reference to user input (988) designating one or more parameters of interest for a measurement, and by simulating the reconstruction process reconstruction. The optimized model recipe can be determined automatically by a 'parameter advisor' process (986) which simulates reconstruction of a set (984) of reference structures, using a plurality of candidate model recipes. In the generation of the reference structures, restrictions can be applied (985) to exclude 'unrealistic' parameter combinations.

Abstract translation: 衍射模型和散射法用于重建基底上微观结构（30）的模型。 定义多个候选结构，每个候选结构由多个参数（p1，p2等）表示）。 通过模拟每个所述候选结构的照明来计算多个模型衍射信号。 通过将所述模型衍射信号中的一个或多个配合到从所述结构（30）检测到的信号来重构所述结构。 在候选结构的生成中，使用模型配方，其中参数被指定为固定的或可变的。 在可变参数中，某些参数被约束以根据某些约束（A）一起变化，例如线性约束。 通过参考用于指定用于测量的一个或多个感兴趣参数的用户输入（988）以及通过模拟重建过程重建来确定优化的约束集（990）以及因此优化的模型配方（994）。 优化的模型配方可以通过使用多个候选模型配方来模拟参考结构的集合（984）的重建的“参数顾问”过程（986）来自动确定。 在参考结构的产生中，可以应用限制（985）来排除“不切实际”的参数组合。

公开(公告)号：WO2011012624A1

公开(公告)日：2011-02-03

申请号：PCT/EP2010/060894

申请日：2010-07-27

Applicant: ASML Netherlands B.V. ,  CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

Inventor： CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation, the first image being formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

Abstract translation: 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在衬底上形成结构，该结构具有至少一个特征，该特征在印刷轮廓中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像，第一图像使用非零次衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

公开(公告)号：WO2021052772A1

公开(公告)日：2021-03-25

申请号：PCT/EP2020/074621

申请日：2020-09-03

Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V. ,  STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN ,  STICHTING VU ,  UNIVERSITEIT VAN AMSTERDAM

Inventor： KOOLEN, Armand, Eugene, Albert ,  KREUZER, Justin ,  MEHTA, Nikhil ,  WARNAAR, Patrick ,  TENNER, Vasco, Tomas ,  TINNEMANS, Patricius, Aloysius Jacobus ,  CRAMER, Hugo

IPC: G03F7/20 ,  G01N21/956

Abstract: Disclosed is a method for a metrology measurement on an area of a substrate comprising at least a portion of a target structure. The method comprises receiving a radiation information representing a portion of radiation scattered by the are, and using a filter in a Fourier domain for removing or suppressing at least a portion of the received radiation information that does not relate to radiation that has been scattered by the target structure for obtaining a filtered radiation information for the metrology measurement, wherein characteristics of the filter are based on target information about the target structure.

公开(公告)号：WO2015022239A1

公开(公告)日：2015-02-19

申请号：PCT/EP2014/066840

申请日：2014-08-05

Applicant: ASML NETHERLANDS B.V.

Inventor： MOSSAVAT, Seyed Iman ,  CRAMER, Hugo ,  GROOTJANS, Willem Jan ,  VAN LEEST, Adriaan

IPC: G03F7/20 ,  G01N21/956

CPC classification number: G03F7/705 ,  G01N21/956 ,  G01N21/95607 ,  G03F7/70625 ,  G03F9/7092

Abstract: Methods and inspection apparatus and computer program products for assessing a quality of reconstruction of a value of a parameter of interest of a structure, which may be applied for example in metrology of microscopic structures. It is important the reconstruction provides a value of a parameter of interest (e.g. a CD) of the structure which is accurate as the reconstructed value is used to monitor and/or control a lithographic process. This is a way of assessing a quality of reconstruction (803) of a value of a parameter of interest of a structure which does not require the use of a scanning electron microscope, by predicting (804) values of the parameter of interest of structures using reconstructed values of parameters of structures, and by comparing (805) the predicted values of the parameter of interest and the reconstructed values of the parameter of interest.

Abstract translation: 用于评估结构的感兴趣参数的值的重建质量的方法和检查装置和计算机程序产品，其可以应用于例如微观结构的计量学。 重要的是，重建提供了结构的关注参数（例如CD）的值，该值是精确的，因为重建值用于监视和/或控制光刻过程。 这是通过预测（804）结构的感兴趣的参数的值来评估不需要使用扫描电子显微镜的结构的感兴趣参数的值的重建质量（803）的方法， 通过比较（805）感兴趣参数的预测值和感兴趣参数的重建值，重建结构参数值。

公开(公告)号：WO2010040696A1

公开(公告)日：2010-04-15

申请号：PCT/EP2009/062840

申请日：2009-10-02

Applicant: ASML NETHERLANDS B.V. ,  LEEWIS, Christian ,  CRAMER, Hugo ,  VAN DE KERKHOF, Marcus ,  QUAEDACKERS, Johannes ,  MATTHEUS, Christine

Inventor： LEEWIS, Christian ,  CRAMER, Hugo ,  VAN DE KERKHOF, Marcus ,  QUAEDACKERS, Johannes ,  MATTHEUS, Christine

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70675 ,  G03F7/70683

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract translation: 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构构成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。

公开(公告)号：WO2014082938A1

公开(公告)日：2014-06-05

申请号：PCT/EP2013/074516

申请日：2013-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VANOPPEN, Peter ,  BROUWER, Eric ,  CRAMER, Hugo ,  DEN BESTEN, Jan ,  ENGELEN, Adrianus ,  HINNEN, Paul

IPC: G03F7/20

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法。 使用光刻工艺在衬底上产生第一结构，第一结构具有剂量敏感特征，其具有取决于光刻设备在衬底上的曝光剂量的形式。 使用光刻工艺在衬底上产生第二结构，第二结构具有剂量敏感特征，其具有取决于光刻设备的曝光剂量但与第一结构具有不同于曝光剂量的灵敏度的形式 。 检测散射辐射，同时用辐射照射第一和第二结构，以获得第一和第二散射仪信号。 使用第一和第二散射仪信号来确定用于产生第一和第二结构中的至少一个的曝光剂量值。

公开(公告)号：WO2014016056A1

公开(公告)日：2014-01-30

申请号：PCT/EP2013/062630

申请日：2013-06-18

Applicant: ASML NETHERLANDS B.V.

Inventor： CRAMER, Hugo ,  SOCHA, Robert ,  TINNEMANS, Patricius ,  VAESSEN, Jean-Pierre

IPC: G03F7/20

CPC classification number: G01N23/203 ,  G03F7/70058 ,  G03F7/70625 ,  H01J37/26

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

Abstract translation: 检查方法确定基板图案的轮廓参数的值。 产生具有基线图案目标（BP）的基准基底，其具有通过轮廓参数描述的轮廓，例如CD（中值临界尺寸），SWA（侧壁角）和RH（抗蚀剂高度）。 散射法用于获得第一和第二个目标的第一和第二信号。 使用贝叶斯差分成本函数，基于基线瞳孔和扰动瞳孔之间的差异以及瞳孔对图形轮廓参数的依赖性来计算微分图案轮廓参数的值。 例如，在基线工艺和用于光刻工艺的稳定性控制的扰动过程之间测量差异。 前馈差分堆栈参数也是通过与模式目标相同的基板上的堆叠目标的观察来计算的。