公开(公告)号：WO2017114652A1

公开(公告)日：2017-07-06

申请号：PCT/EP2016/080742

申请日：2016-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZHANG, Youping ,  XU, Hua

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70683 ,  G03F9/7076

Abstract: Disclosed herein is a target structure, wherein the target structure is configured to be measured with a metrology tool, the metrology tool having a diffraction threshold; the target structure comprising: one or more patterns supported on a substrate, the one or more patterns being periodic with a first period (Pitch) in a first direction and periodic with a second period (Pitch2) in a second direction, the first direction and second direction being different and parallel to the substrate, the first period being equal to or greater than the diffraction threshold and the second period is less than the diffraction threshold.

Abstract translation: 这里公开了一种目标结构，其中该目标结构被配置成利用度量工具来测量，该度量工具具有衍射阈值; 所述目标结构包括：支撑在衬底上的一个或多个图案，所述一个或多个图案在第一方向上具有第一周期（Pitch）并且在第二方向上周期性地具有第二周期（Pitch2），所述第一方向和 第二方向不同且平行于衬底，第一周期等于或大于衍射阈值，第二周期小于衍射阈值。