公开(公告)号：WO2019224176A1

公开(公告)日：2019-11-28

申请号：PCT/EP2019/063053

申请日：2019-05-21

Applicant: ASML NETHERLANDS B.V.

Inventor： LI, Danying ,  FAN, Chi-Hsiang ,  ELMALK, Abdalmohsen ,  ZHANG, Youping ,  CHEN, Jay, Jianhui ,  HUANG, Kui-Jun

IPC: G03F7/20

Abstract: Described herein is are method for determining a stack configuration for a substrate subjected a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map; and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

公开(公告)号：WO2017032736A1

公开(公告)日：2017-03-02

申请号：PCT/EP2016/069790

申请日：2016-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZHANG, Youping ,  SMILDE, Hendrik, Jan, Hidde ,  TSIATMAS, Anagnostis ,  VAN LEEST, Adriaan, Johan ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan

IPC: G03F7/20

CPC classification number: G03F7/70491 ,  G01N21/47 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has first and second target structures formed thereon by a lithographic process, lithographic process comprising at least two lithographic steps. Each target structure has two-dimensional periodic structure formed in a single material layer, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount. An angle- resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构，光刻工艺包括至少两个光刻步骤。 每个目标结构具有形成在单个材料层中的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第一偏置量， 在第二目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第二偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理参数的测量 第一和第二目标结构。

公开(公告)号：WO2020114692A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/080129

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： LIN, Chenxi ,  TABERY, Cyrus, Emil ,  CEKLI, Hakki, Ergun ,  HASTINGS, Simon, Philip, Spencer ,  MENCHTCHIKOV, Boris ,  ZOU, Yi ,  CHENG, Yana ,  GENIN, Maxime, Philippe, Frederic ,  CHEN, Tzu-Chao ,  HARUTYUNYAN, Davit ,  ZHANG, Youping

IPC: G03F7/20 ,  H01L21/66

Abstract: Described is a method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method comprising; obtaining yield distribution data comprising the distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set comprising a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：WO2018197198A1

公开(公告)日：2018-11-01

申请号：PCT/EP2018/059108

申请日：2018-04-10

Applicant: ASML NETHERLANDS B.V.

Inventor： FAN, Chi-Hsiang ,  VAN DER SCHAAR, Maurits ,  ZHANG, Youping

IPC: G03F7/20

Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.

公开(公告)号：WO2017114652A1

公开(公告)日：2017-07-06

申请号：PCT/EP2016/080742

申请日：2016-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZHANG, Youping ,  XU, Hua

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70683 ,  G03F9/7076

Abstract: Disclosed herein is a target structure, wherein the target structure is configured to be measured with a metrology tool, the metrology tool having a diffraction threshold; the target structure comprising: one or more patterns supported on a substrate, the one or more patterns being periodic with a first period (Pitch) in a first direction and periodic with a second period (Pitch2) in a second direction, the first direction and second direction being different and parallel to the substrate, the first period being equal to or greater than the diffraction threshold and the second period is less than the diffraction threshold.

Abstract translation: 这里公开了一种目标结构，其中该目标结构被配置成利用度量工具来测量，该度量工具具有衍射阈值; 所述目标结构包括：支撑在衬底上的一个或多个图案，所述一个或多个图案在第一方向上具有第一周期（Pitch）并且在第二方向上周期性地具有第二周期（Pitch2），所述第一方向和 第二方向不同且平行于衬底，第一周期等于或大于衍射阈值，第二周期小于衍射阈值。

公开(公告)号：WO2015139951A1

公开(公告)日：2015-09-24

申请号：PCT/EP2015/054448

申请日：2015-03-03

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  JIA, Jianjun ,  LIU, Xiaofeng ,  ZHANG, Youping

IPC: G03F7/20 ,  G03F1/36

CPC classification number: G03F7/7055 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705

Abstract: Disclosed herein is a computer-implemented method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. The multi-variable cost function may be a function of one or more pattern shift errors. Reconfiguration of the characteristics may be under one or more constraints on the one or more pattern shift errors.

Abstract translation: 本文公开了一种计算机实现的方法，用于改进用于使用光刻投影设备将设计布局的一部分成像到基板上的光刻工艺，所述方法包括：计算作为特征的多个设计变量的多变量成本函数 并且通过调整设计变量来重新配置光刻工艺的特性，直到满足预定的终止条件。 多变量成本函数可以是一个或多个模式偏移误差的函数。 特征的重新配置可能在一个或多个模式偏移误差的一个或多个约束下。

公开(公告)号：WO2020114686A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/079691

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Youping ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime

IPC: G03F7/20

Abstract: Described is a method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method comprising: obtaining a trained first model which translates modeled parameters into a yield parameter, said modeled parameters comprising: a) geometrical parameters associated with one or more of: a geometric characteristic, dimension or position of a device element manufactured by the process and b) trained free parameters; obtaining process parameter data comprising process parameters characterizing the process; converting the process parameter data into values of the geometrical parameters; and predicting the yield parameter using the trained first model and the values of the geometrical parameters.

公开(公告)号：WO2020114684A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/079640

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： SLACHTER, Abraham ,  TEL, Wim, Tjibbo ,  SLOTBOOM, Daan, Maurits ,  TIMOSHKOV, Vadim, Yourievich ,  VAN DER STRATEN, Koen, Wilhelmus, Cornelis, Adrianus ,  MENCHTCHIKOV, Boris ,  HASTINGS, Simon, Philip, Spencer ,  TABERY, Cyrus, Emil ,  GENIN, Maxime, Philippe, Frederic ,  ZHANG, Youping ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana

IPC: G03F7/20

Abstract: A method for analyzing a process, the method including: obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：WO2018095705A1

公开(公告)日：2018-05-31

申请号：PCT/EP2017/077958

申请日：2017-11-01

Applicant: ASML NETHERLANDS B.V.

Inventor： CALADO, Victor, Emanuel ,  ZHANG, Youping ,  VAN DER SCHAAR, Maurits ,  VAN HAREN, Richard, Johannes, Franciscus ,  LIU, Xing, Lan

IPC: G03F7/20 ,  G01N21/956

CPC classification number: G03F7/70633 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.

公开(公告)号：WO2015124391A1

公开(公告)日：2015-08-27

申请号：PCT/EP2015/051680

申请日：2015-01-28

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie, Jeffrey ,  ADAM, Omer, Abubaker, Omer ,  HUANG, Te-Chih ,  ZHANG, Youping

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G01N21/8806 ,  G01N2201/12 ,  G03F7/70683

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

Abstract translation: 公开了一种测量涉及光刻的制造工艺的工艺参数的方法。 在公开的布置中，该方法包括对基板上的区域中的覆盖误差执行第一和第二测量，并且基于重叠误差的第一和第二测量值获得处理参数的度量。 重叠误差的第一次测量被设计为对过程参数中的扰动比已知量的覆盖误差的第二次测量更敏感。