METHOD FOR DETERMINING STACK CONFIGURATION OF SUBSTRATE

    公开(公告)号:WO2019224176A1

    公开(公告)日:2019-11-28

    申请号:PCT/EP2019/063053

    申请日:2019-05-21

    Abstract: Described herein is are method for determining a stack configuration for a substrate subjected a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map; and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

    METHOD AND APPARATUS FOR MEASURING A PARAMETER OF A LITHOGRAPHIC PROCESS, SUBSTRATE AND PATTERNING DEVICES FOR USE IN THE METHOD
    2.
    发明申请
    METHOD AND APPARATUS FOR MEASURING A PARAMETER OF A LITHOGRAPHIC PROCESS, SUBSTRATE AND PATTERNING DEVICES FOR USE IN THE METHOD 审中-公开
    用于测量方法的方法和装置,用于方法的基板和基板装置

    公开(公告)号:WO2017032736A1

    公开(公告)日:2017-03-02

    申请号:PCT/EP2016/069790

    申请日:2016-08-22

    Abstract: A substrate has first and second target structures formed thereon by a lithographic process, lithographic process comprising at least two lithographic steps. Each target structure has two-dimensional periodic structure formed in a single material layer, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount. An angle- resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

    Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构,光刻工艺包括至少两个光刻步骤。 每个目标结构具有形成在单个材料层中的二维周期性结构,其中在第一目标结构中,在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第一偏置量, 在第二目标结构中,在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第二偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱,并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理参数的测量 第一和第二目标结构。

    METROLOGY METHOD AND APPARATUS AND ASSOCIATED COMPUTER PROGRAM

    公开(公告)号:WO2018197198A1

    公开(公告)日:2018-11-01

    申请号:PCT/EP2018/059108

    申请日:2018-04-10

    Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.

    ALTERNATIVE TARGET DESIGN FOR METROLOGY USING MODULATION TECHNIQUES
    5.
    发明申请
    ALTERNATIVE TARGET DESIGN FOR METROLOGY USING MODULATION TECHNIQUES 审中-公开
    用调制技术进行计量的替代目标设计

    公开(公告)号:WO2017114652A1

    公开(公告)日:2017-07-06

    申请号:PCT/EP2016/080742

    申请日:2016-12-13

    CPC classification number: G03F7/70633 G03F7/70683 G03F9/7076

    Abstract: Disclosed herein is a target structure, wherein the target structure is configured to be measured with a metrology tool, the metrology tool having a diffraction threshold; the target structure comprising: one or more patterns supported on a substrate, the one or more patterns being periodic with a first period (Pitch) in a first direction and periodic with a second period (Pitch2) in a second direction, the first direction and second direction being different and parallel to the substrate, the first period being equal to or greater than the diffraction threshold and the second period is less than the diffraction threshold.

    Abstract translation: 这里公开了一种目标结构,其中该目标结构被配置成利用度量工具来测量,该度量工具具有衍射阈值; 所述目标结构包括:支撑在衬底上的一个或多个图案,所述一个或多个图案在第一方向上具有第一周期(Pitch)并且在第二方向上周期性地具有第二周期(Pitch2),所述第一方向和 第二方向不同且平行于衬底,第一周期等于或大于衍射阈值,第二周期小于衍射阈值。

    PATTERN PLACEMENT ERROR AWARE OPTIMIZATION
    6.
    发明申请
    PATTERN PLACEMENT ERROR AWARE OPTIMIZATION 审中-公开
    图案放置错误优化

    公开(公告)号:WO2015139951A1

    公开(公告)日:2015-09-24

    申请号:PCT/EP2015/054448

    申请日:2015-03-03

    Abstract: Disclosed herein is a computer-implemented method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. The multi-variable cost function may be a function of one or more pattern shift errors. Reconfiguration of the characteristics may be under one or more constraints on the one or more pattern shift errors.

    Abstract translation: 本文公开了一种计算机实现的方法,用于改进用于使用光刻投影设备将设计布局的一部分成像到基板上的光刻工艺,所述方法包括:计算作为特征的多个设计变量的多变量成本函数 并且通过调整设计变量来重新配置光刻工艺的特性,直到满足预定的终止条件。 多变量成本函数可以是一个或多个模式偏移误差的函数。 特征的重新配置可能在一个或多个模式偏移误差的一个或多个约束下。

    METROLOGY USING A PLURALITY OF METROLOGY TARGET MEASUREMENT RECIPES

    公开(公告)号:WO2018095705A1

    公开(公告)日:2018-05-31

    申请号:PCT/EP2017/077958

    申请日:2017-11-01

    CPC classification number: G03F7/70633 G03F7/70625 G03F7/70683

    Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.

    MEASURING A PROCESS PARAMETER FOR A MANUFACTURING PROCESS INVOLVING LITHOGRAPHY
    10.
    发明申请
    MEASURING A PROCESS PARAMETER FOR A MANUFACTURING PROCESS INVOLVING LITHOGRAPHY 审中-公开
    测量涉及平面图的制造工艺的工艺参数

    公开(公告)号:WO2015124391A1

    公开(公告)日:2015-08-27

    申请号:PCT/EP2015/051680

    申请日:2015-01-28

    Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

    Abstract translation: 公开了一种测量涉及光刻的制造工艺的工艺参数的方法。 在公开的布置中,该方法包括对基板上的区域中的覆盖误差执行第一和第二测量,并且基于重叠误差的第一和第二测量值获得处理参数的度量。 重叠误差的第一次测量被设计为对过程参数中的扰动比已知量的覆盖误差的第二次测量更敏感。

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