公开(公告)号：WO2020212107A1

公开(公告)日：2020-10-22

申请号：PCT/EP2020/058491

申请日：2020-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： FANG, Wei ,  PU, Lingling ,  CHEN, Zhichao ,  ZHANG, Haili ,  ZHANG, Pengcheng

IPC: G03F1/36 ,  G01N21/956 ,  G03F1/84 ,  G03F7/20

Abstract: Described herein is a method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.