Abstract:
An improved systems and methods for generating a denoised inspection image are disclosed. An improved method for generating a denoised inspection image comprises acquiring an inspection image; generating a first denoised image by executing a first type denoising algorithm on the inspection image; and generating a second denoised image by executing a second type denoising algorithm on the first denoised image.
Abstract:
An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a first image and a second image of multiple stacked layers of a sample that are taken with a first focal point and a second focal point, respectively, associating a first segment of the first image with a first layer among the multiple stacked layers and associating a second segment of the second image with a second layer among the multiple stacked layers, updating the first segment based on a first reference image corresponding to the first layer and updating the second segment based on a second reference image corresponding to the second layer, and combining the updated first segment and the updated second segment to generate a combined image including the first layer and the second layer.
Abstract:
Apparatuses, methods, and systems for ultra-fast beam current adjustment for a charged-particle inspection system include an charged-particle source configured to emit charged particles for scanning a sample; and an emission booster configured to configured to irradiate electromagnetic radiation onto the charged-particle source for boosting charged-particle emission in a first cycle of a scanning operation of the charged-particle inspection system, and to stop irradiating the electromagnetic radiation in a second cycle of the scanning operation.
Abstract:
Described herein is a method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.
Abstract:
Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.
Abstract:
A defect displaying method is provided in the disclosure. The method comprises acquiring defect group information from an image of a wafer, wherein the defect group information includes a set of correlations between a plurality of defects identified from the image and one or more corresponding assigned defect types and displaying at least some of the plurality of defects according to their corresponding assigned defect types.
Abstract:
Systems and methods for irradiating a sample with a charged-particle beam are disclosed. The charged-particle beam system may comprise a stage configured to hold a sample and is movable in at least one of X-Y-Z axes. The charged-particle beam system may further comprise a position sensing system to determine a lateral and vertical displacement of the stage, and a beam deflection controller configured to apply a first signal to deflect a primary charged-particle beam incident on the sample to at least partly compensate for the lateral displacement, and to apply a second signal to adjust a focus of the deflected charged-particle beam incident on the sample to at least partly compensate for the vertical displacement of the stage. The first and second signals may comprise an electrical signal having a high bandwidth in a range of 10 k Hz to 50 k Hz, and 50 k Hz to 200 k Hz, respectively.
Abstract:
Described herein is a method for correcting metrology data of a patterning process. The method includes obtaining (P92) (i) metrology data (901) of a substrate subjected to the patterning process and (ii) a quality metric (902, e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing (P94) a correlation between the quality metric and the metrology data; and determining (P96) a correction to the metrology data based on the correlation between the quality metric and the metrology data.
Abstract:
Systems and methods for detecting defects are disclosed. According to certain embodiments, a method of performing image processing includes acquiring one or more images of a sample, performing first image analysis on the one or more images, identifying a plurality of first features in the one or more images, determining pattern data corresponding to the plurality of first features, selecting at least one of the plurality of first features based on the pattern data, and performing second image analysis of the at least one of the plurality of first features. Methods may also include determining defect probability of the plurality of first features based on the pattern data. Selecting the at least one of the plurality of first features may be based on the defect probability.
Abstract:
A data processing system is disclosed. According to certain embodiments, the system includes a scheduler configured to receive an inspection data set to be processed and to parse the inspection data set into a plurality of workloads including a first set of workloads and a second set of workloads, wherein the inspection data set corresponds to information related to one or more sets of secondary electrons. The system also includes a first sub-scheduler configured to manage a first set of computing nodes for processing the first set of workloads assigned by the scheduler. The system further includes a second sub-scheduler configured to manage a second set of computing nodes for processing the second set of workloads assigned by the scheduler, wherein the first set of workloads and the second set of workloads are concurrently processed by the first and second set of computing nodes.