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公开(公告)号：US20250157783A1
公开(公告)日：2025-05-15
申请号：US19025881
申请日：2025-01-16
Applicant: ASML Netherlands B.V.
Inventor： Xuerang HU , Weiming REN , Xuedong LIU , Zhong-wei CHEN
IPC: H01J37/147 , H01J37/12 , H01J37/26
Abstract: Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.
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公开(公告)号：US20230028799A1
公开(公告)日：2023-01-26
申请号：US17785896
申请日：2020-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Wei FANG , Zhong-wei CHEN
IPC: H01J37/24 , H01J37/075 , H01J37/073
Abstract: Apparatuses, methods, and systems for ultra-fast beam current adjustment for a charged-particle inspection system include an charged-particle source configured to emit charged particles for scanning a sample; and an emission booster configured to configured to irradiate electromagnetic radiation onto the charged-particle source for boosting charged-particle emission in a first cycle of a scanning operation of the charged-particle inspection system, and to stop irradiating the electromagnetic radiation in a second cycle of the scanning operation.
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公开(公告)号：US20220005665A1
公开(公告)日：2022-01-06
申请号：US17373766
申请日：2021-07-12
Applicant: ASML Netherlands B.V.
Inventor： Weiming REN , Xuedong LIU , Xuerang HU , Zhong-wei CHEN
IPC: H01J37/145
Abstract: The present disclosure proposes an anti-rotation lens and using it as an anti-rotation condenser lens in a multi-beam apparatus with a pre-beamlet-forming mechanism. The anti-rotation condenser lens keeps rotation angles of beamlets unchanged when changing currents thereof, and thereby enabling the pre-beamlet-forming mechanism to cut off electrons not in use as much as possible. In this way, the multi-beam apparatus can observe a sample with high resolution and high throughput, and is competent as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry.
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公开(公告)号：US20200303155A1
公开(公告)日：2020-09-24
申请号：US16753285
申请日：2018-10-02
Applicant: ASML Netherlands B.V.
Inventor： Xuerang HU , Xuedong LIU , Weiming REN , Zhong-wei CHEN
IPC: H01J37/09 , H01J37/147 , H01J37/153 , H01J37/28 , H01J37/12
Abstract: A multi-beam apparatus for multi-beam inspection with an improved source conversion unit providing more beamlets with high electric safety, mechanical availability and mechanical stabilization has been disclosed. The source-conversion unit comprises an image-forming element array having a plurality of image-forming elements, an aberration compensator array having a plurality of micro-compensators, and a pre-bending element array with a plurality of pre-bending micro-deflectors. In each of the arrays, adjacent elements are placed in different layers, and one element may comprise two or more sub-elements placed in different layers. The sub-elements of a micro-compensator may have different functions such as micro-lens and micro-stigmators.
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公开(公告)号：US20200271598A1
公开(公告)日：2020-08-27
申请号：US16812109
申请日：2020-03-06
Applicant: ASML Netherlands B.V.
Inventor： Kuo-Feng TSENG , Zhonghua DONG , Yixiang WANG , Zhong-wei CHEN
IPC: G01N23/203 , G01N23/2276 , G01N23/2254 , G01N23/2252
Abstract: Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.
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Patent Agency Ranking
公开(公告)号：US20230076943A1
公开(公告)日：2023-03-09
申请号：US17985087
申请日：2022-11-10
Applicant: ASML Netherlands B.V.
Inventor： Lingling PU , Wei FANG , Zhong-wei CHEN
Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to he added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.
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公开(公告)号：US20220084777A1
公开(公告)日：2022-03-17
申请号：US17420123
申请日：2019-12-19
Applicant: ASML Netherlands B.V.
Inventor： Jan-Gerard Cornelis VAN DER TOORN , Zhong-wei CHEN
Abstract: A charged particle inspection system may include a shielding plate having an aperture or more than one aperture, for example, to permit additional inspection by an additional instrument requiring a line of sight to the area of interest. A field shaping element, such as a window element or a raised rim, is placed at the aperture to prevent or reduce a component of an electric field.
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公开(公告)号：US20200286708A1
公开(公告)日：2020-09-10
申请号：US16652398
申请日：2018-09-28
Applicant: ASML Netherlands B.V.
Inventor： Joe WANG , Yongxin WANG , Zhong-wei CHEN , Xuerang HU
IPC: H01J37/244 , H01J37/28
Abstract: A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.
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公开(公告)号：US20200211845A1
公开(公告)日：2020-07-02
申请号：US16730897
申请日：2019-12-30
Applicant: ASML Netherlands B.V.
Inventor： Lingling PU , Wei FANG , Zhong-wei CHEN
Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.
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公开(公告)号：US20240044820A1
公开(公告)日：2024-02-08
申请号：US18484161
申请日：2023-10-10
Applicant: ASML Netherlands B.V.
Inventor： Kuo-Feng TSENG , Zhonghua DONG , Yixiang WANG , Zhong-wei CHEN
IPC: G01N23/2206 , G01N23/2251 , G01N23/203
CPC classification number: G01N23/2206 , G01N23/2251 , G01N23/203 , G01N2223/6116 , G01N2223/3307
Abstract: Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.
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