公开(公告)号：JP2006261667A

公开(公告)日：2006-09-28

申请号：JP2006067063

申请日：2006-03-13

Applicant: Asml Holdings Nv ,  Asml Netherlands Bv ,  Lsi Logic Corp ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ ,  エイエスエムエル ホールディング ナムローゼ フエンノートシャップ ,  エルエスアイ ロジック コーポレイション

Inventor： TROOST KARS Z ,  BASELMANS JOHANNES JACOBUS MAT ,  BLEEKER ARNO JAN ,  MARKOYA LOUIS J ,  CALLAN NEAL ,  EIB NICHOLAS K

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a system which can change a pattern more quickly and at less cost compared with a mask base system.
SOLUTION: Wide range contrast can be attained in such a way that an inclination and location of individually controllable element are adjusted simultaneously. This can be used to compensate a cupping of the individually controllable element. Simultaneous adjustment of location and inclination of the individually controllable element can be attained by two electrodes capable of operating over a range of values.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种与掩模基础系统相比可以更快更便利地改变图案的系统。

解决方案：可以以同时调节独立可控元件的倾斜度和位置的方式获得宽范围的对比度。 这可以用于补偿单独可控元件的拔罐。 可以通过能够在一定范围内操作的两个电极来实现单独可控元件的位置和倾斜的同时调节。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2010002915A

公开(公告)日：2010-01-07

申请号：JP2009181380

申请日：2009-08-04

Applicant: Asml Holding Nv ,  Asml Netherlands Bv ,  Lsi Corp ,  エーエスエムエル ネザーランズ ビー.ブイ. ,  エーエスエムエル ホールディング エヌ.ブイ. ,  エルエスアイ コーポレーション

Inventor： TROOST KARS Z ,  BASELMANS JOHANNES JACOBUS MATHEUS ,  BLEEKER ARNO JAN ,  MARKOYA LOUIS J ,  CALLAN NEAL ,  EIB NICHOLAS K

IPC: G03F7/20 ,  G02B26/08 ,  H01L21/027

CPC classification number: G03F7/70291 ,  G03F7/70275 ,  G03F7/70358

Abstract: PROBLEM TO BE SOLVED: To provide a system that can more quickly change a pattern at a lower cost, as compared with a mask base system.
SOLUTION: The tilt and position of individually controllable element becomes simultaneously adjustable and allows a wider range of contrasts to be achieved. This can also be used to compensate for cupping of individually controllable elements. Simultaneous adjustment of both the position and the tilt of the individually controllable elements can be attained by two electrodes which are operable over a range of values.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：与掩模基础系统相比，提供能够以更低的成本更快速地改变图案的系统。 解决方案：独立可控元件的倾斜和位置可同时调节，可实现更宽范围的对比度。 这也可以用于补偿单独可控元件的拔罐。 可以通过两个可在一定数值范围内操作的电极来实现单独可控元件的位置和倾斜的同时调节。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2015189026A3

公开(公告)日：2016-02-18

申请号：PCT/EP2015061609

申请日：2015-05-26

Applicant: ASML NETHERLANDS BV

Inventor： FOUQUET CHRISTOPHE DAVID ,  KASTRUP BERNARDO ,  DEN BOEF ARIE JEFFREY ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  KAVANAGH JAMES BENEDICT ,  KOONMEN JAMES PATRICK ,  CALLAN NEAL

IPC: G03F7/20 ,  G03F1/36

CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

Abstract translation: 本文公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。

公开(公告)号：SG11201610106SA

公开(公告)日：2016-12-29

申请号：SG11201610106S

申请日：2015-05-26

Applicant: ASML NETHERLANDS BV

Inventor： FOUQUET CHRISTOPHE DAVID ,  KASTRUP BERNARDO ,  DEN BOEF ARIE JEFFREY ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  KAVANAGH JAMES BENEDICT ,  KOONMEN JAMES PATRICK ,  CALLAN NEAL

IPC: G03F1/36 ,  G03F7/20

Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.