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    METROLOGY METHOD, TARGET AND SUBSTRATE
    1.
    发明申请
    METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
    计量方法，目标和底物

    公开(公告)号：WO2016030255A2

    公开(公告)日：2016-03-03

    申请号：PCT/EP2015069062

    申请日：2015-08-19

    Applicant: ASML NETHERLANDS BV

    Inventor： BHATTACHARYYA KAUSTUVE ,  VAN BUEL HENRICUS WILHELMUS MARIA ,  FOUQUET CHRISTOPHE DAVID ,  SMILDE HENDRIK JAN HIDDE ,  VAN DER SCHAAR MAURITS ,  DEN BOEF ARIE JEFFREY ,  VAN HAREN RICHARD JOHANNES FRANCISCUS ,  LIU XING LAN ,  BELTMAN JOHANNES MARCUS MARIA ,  FUCHS ANDREAS ,  ADAM OMER ABUBAKER OMER ,  KUBIS MICHAEL ,  JAK MARTIN JACOBUS JOHAN

    IPC: G03F7/20

    CPC classification number: G01B11/14 ,  G03F7/70633 ,  G03F7/70683

    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer. A method of devising such a measurement target involving locating an assist feature at a periphery of the sub-targets, the assist feature being configured to reduce measured intensity peaks at the periphery of the sub-targets.

    Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 不同于第二子目标的设计，包括具有与第二子目标周期结构不同的节距，特征宽度，空间宽度和/或分割的第一子目标周期性结构的不同设计，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层周围的第二层中的第一周期结构下方，并且在第二层周期结构之下不存在周期性结构 在所述第二层中，并且第四周期性结构至少部分地位于所述第二层下面的第三层中的所述第二周期性结构下方。 一种设计这样的测量目标的方法，包括在辅助目标的周围定位辅助特征，所述辅助特征被配置为减小在所述子目标的周边处的测量的强度峰值。

    COMPUTATIONAL WAFER INSPECTION
    2.
    发明申请
    COMPUTATIONAL WAFER INSPECTION 审中-公开
    计算水轮检查

    公开(公告)号：WO2015189026A3

    公开(公告)日：2016-02-18

    申请号：PCT/EP2015061609

    申请日：2015-05-26

    Applicant: ASML NETHERLANDS BV

    Inventor： FOUQUET CHRISTOPHE DAVID ,  KASTRUP BERNARDO ,  DEN BOEF ARIE JEFFREY ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  KAVANAGH JAMES BENEDICT ,  KOONMEN JAMES PATRICK ,  CALLAN NEAL

    IPC: G03F7/20 ,  G03F1/36

    CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

    Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

    Abstract translation: 本文公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。

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