公开(公告)号：KR20180072768A

公开(公告)日：2018-06-29

申请号：KR20187014221

申请日：2016-09-27

Applicant: ASML NETHERLANDS BV

Inventor： TEN BERGE PETER ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  KASTRUP BERNARDO ,  VAN HAREN RICHARD JOHANNES FRANCISCUS

IPC: G03F1/72 ,  G03F7/20

CPC classification number: G03F1/72

Abstract: 패터닝시스템에서의패터닝디바이스에관한측정및/또는시뮬레이션결과에기초하여제 1 기판의영역이핫 스폿(710)을포함함을식별하는단계, 핫스폿에서의제 1 오차정보(720)를결정하는단계, 및컴퓨터시스템에의하여, 수정된패터닝디바이스를얻기위해제 1 오차정보에기초하여패터닝디바이스를수정하는제 1 수정정보(상기정보는 740에서패터닝디바이스와함께패터닝수정툴로전달됨)를생성하는단계(730)를포함하는방법이개시된다.

公开(公告)号：KR20180072760A

公开(公告)日：2018-06-29

申请号：KR20187014163

申请日：2016-09-28

Applicant: ASML NETHERLANDS BV

Inventor： TEN BERGE PETER ,  MOS EVERHARDUS CORNELIS ,  VAN HAREN RICHARD JOHANNES FRANCISCUS ,  WARDENIER PETER HANZEN ,  JENSEN ERIK ,  KASTRUP BERNARDO ,  KUBIS MICHAEL ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  DECKERS DAVID FRANS SIMON ,  HENKE WOLFGANG HELMUT ,  LEE JOUNGCHEL

IPC: G03F1/72 ,  G03F7/20

CPC classification number: G03F1/72 ,  G03F7/70425 ,  G03F7/70625

Abstract: 패터닝시스템의에칭툴에의해처리된이후에패턴의측정및/또는시뮬레이션결과를획득하는단계, 에칭로딩(etch loading) 효과에기인한패터닝오차를상기측정및/또는시뮬레이션결과에기초하여결정하는단계, 및컴퓨터시스템에의하여, 상기패터닝오차에기초하여, 상기패터닝시스템내에서상기에칭툴로부터업스트림에있는패터닝디바이스를수정하기위한및/또는수정장치를조절하기위한수정정보를생성하는단계를포함하고, 상기패터닝디바이스가상기수정정보에따라수정되고및/또는상기수정장치가상기수정정보에따라조절되는경우, 상기패터닝오차는정정가능오차로변환되고및/또는특정범위로감소되는, 방법.

公开(公告)号：JP2008153663A

公开(公告)日：2008-07-03

申请号：JP2007321286

申请日：2007-12-12

Applicant: Asml Holding Nv ,  Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ. ,  エーエスエムエル ホールディング エヌ.ブイ.

Inventor： KARS ZEGER TROOST ,  HINTERSTEINER JASON D ,  TINNEMANS PATRICIUS ALOYSIUS J ,  CEBUHAR WENCESLAO A ,  ALBRIGHT RONALD P ,  KASTRUP BERNARDO ,  HENDRICUS HOEKS MARTINUS H

IPC: H01L21/027 ,  G03F1/08 ,  G03F7/20

CPC classification number: G03F7/70791 ,  G03F1/36 ,  G03F7/70283 ,  G03F7/70291 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70558

Abstract: PROBLEM TO BE SOLVED: To improve the accuracy of a device structure formed by a maskless lithography system. SOLUTION: A method of producing optimized setpoint data for controlling the element operation of an array of individually controllable elements in a maskless system, and systems therefor are provided. Optimization is based on an estimated device structure and/or an estimated dose pattern that utilize one or more of the following factors: the low-pass characteristics of a projection system, the configuration of an illumination system, and the process window characteristics. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提高由无掩模光刻系统形成的器件结构的精度。 解决方案：提供了一种生产用于控制无掩模系统中的独立可控元件阵列的元件操作的优化设定点数据的方法及其系统。 优化基于利用以下一个或多个因素的估计装置结构和/或估计剂量图案：投影系统的低通特性，照明系统的配置以及处理窗口特性。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：WO2015189026A3

公开(公告)日：2016-02-18

申请号：PCT/EP2015061609

申请日：2015-05-26

Applicant: ASML NETHERLANDS BV

Inventor： FOUQUET CHRISTOPHE DAVID ,  KASTRUP BERNARDO ,  DEN BOEF ARIE JEFFREY ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  KAVANAGH JAMES BENEDICT ,  KOONMEN JAMES PATRICK ,  CALLAN NEAL

IPC: G03F7/20 ,  G03F1/36

CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

Abstract translation: 本文公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。

公开(公告)号：SG11201610106SA

公开(公告)日：2016-12-29

申请号：SG11201610106S

申请日：2015-05-26

Applicant: ASML NETHERLANDS BV

Inventor： FOUQUET CHRISTOPHE DAVID ,  KASTRUP BERNARDO ,  DEN BOEF ARIE JEFFREY ,  MULKENS JOHANNES CATHARINUS HUBERTUS ,  KAVANAGH JAMES BENEDICT ,  KOONMEN JAMES PATRICK ,  CALLAN NEAL

IPC: G03F1/36 ,  G03F7/20

Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：NL2008041A

公开(公告)日：2012-07-31

申请号：NL2008041

申请日：2011-12-23

Applicant: ASML NETHERLANDS BV

Inventor： FINDERS JOZEF ,  KASTRUP BERNARDO ,  PUTTER SANDER

IPC: G03F7/20