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    Model-based scanner tuning methods
    1.
    发明专利
    Model-based scanner tuning methods 有权
    基于模型的扫描仪调谐方法

    公开(公告)号：JP2013012773A

    公开(公告)日：2013-01-17

    申请号：JP2012204119

    申请日：2012-09-18

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： YE JUN ,  CAO YU ,  RONALDUS GOOSSENS ,  SHAO WENJIN ,  JIM KOONMEN

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: B29C67/0088 ,  B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

    Abstract: PROBLEM TO BE SOLVED: To provide systems and methods for performing model-based tuning and performance optimization of multiple lithography systems.SOLUTION: A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relatively to the performance of the reference scanner. The differential model may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

    Abstract translation: 要解决的问题：提供用于执行多个光刻系统的基于模型的调谐和性能优化的系统和方法。

    解决方案：保持目标扫描仪的型号，参考一组可调谐参数定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 相关扫描仪系列的性能可以相对于参考扫描仪的性能来表征。 差分模型可以包括诸如参数偏移和可用于模拟成像行为差异的其他差异的信息。 版权所有（C）2013，JPO＆INPIT

    Method and system for lithography process window simulation
    3.
    发明专利
    Method and system for lithography process window simulation 有权
    用于LITHOGRAPHY PROCESS窗口模拟的方法和系统

    公开(公告)号：JP2012044222A

    公开(公告)日：2012-03-01

    申请号：JP2011257068

    申请日：2011-11-25

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： YE JUN ,  CAO YU ,  FEN HANNING

    IPC: H01L21/027

    CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70991

    Abstract: PROBLEM TO BE SOLVED: To provide a method of simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features.SOLUTION: The method includes the steps of: determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents an imaging result of the target design for the lithographic process. In one given embodiment, the function for simulating spatial images with focus and dose (exposure) variations is defined as the following equation, where Irepresents image intensity at nominal focus and exposure, frepresents nominal focus, f and ε represent actual focus-exposure levels at which the simulated image is calculated, and parameters "a" and "b" represent first order and second order derivative images with respect to focus change.

    Abstract translation: 要解决的问题：提供一种模拟用于对具有多个特征进行成像的目标设计的光刻处理的成像性能的模拟方法。 解决方案：该方法包括以下步骤：确定用于产生模拟图像的功能，其中该功能考虑到与光刻工艺相关联的工艺变化; 并利用该功能产生模拟图像，其中模拟图像表示用于光刻工艺的目标设计的成像结果。 在一个给定的实施例中，用于模拟具有焦点和剂量（曝光）变化的空间图像的功能被定义为以下等式，其中I 0 表示标称焦点和曝光时的图像强度， f 0 表示标称焦点，f和ε表示计算模拟图像的实际聚焦曝光水平，参数“a”和“b”表示一阶和二阶 关于焦点变化的衍生图像。 版权所有（C）2012，JPO＆INPIT

    Method and system for pattern design with adjusted response to wave front aberration
    4.
    发明专利
    Method and system for pattern design with adjusted response to wave front aberration 有权
    用于模式设计的方法和系统，具有调整的响应以进行波前失真

    公开(公告)号：JP2014112236A

    公开(公告)日：2014-06-19

    申请号：JP2013269412

    申请日：2013-12-26

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： FENG HANYING ,  CAO YU ,  YE JUN ,  TSAN YUPIN

    IPC: G03F1/44 ,  G03F1/36 ,  G03F1/70 ,  G06F17/50 ,  H01L21/027

    CPC classification number: G03F7/706 ,  G03F7/70683

    Abstract: PROBLEM TO BE SOLVED: To provide a method and a system for designing gage patterns having extremely high sensitivity to variations of parameters and having robustness to random and repetitive measurement errors in calibration of a lithography process imaging target designs having a plurality of features.SOLUTION: The method is capable of including distinguishing combinations of line width/pitch with the highest sensitivity and the optimal assist feature arrangement, which may result in changes of high CD with the highest sensitivity to variations of lithography process parameters such as variations of wave front aberration parameters (or other lithography response parameters). The method is also capable of including designing a gage having a plurality of test patterns for adjusting combination response of the gage for producing a specific response to parameters of wave front related or other lithography process parameters. The sensitivity to variations of parameters may result in robust performance to random measurement errors and/or any other measurement errors.

    Abstract translation: 要解决的问题：提供一种用于设计具有对参数变化具有极高灵敏度的量具图案的方法和系统，并且具有对具有多个特征的光刻工艺成像目标设计的校准中的随机和重复测量误差的鲁棒性。解决方案： 该方法能够包括具有最高灵敏度和最佳辅助特征布置的线宽/间距的区别组合，这可能导致对于光刻工艺参数的变化（例如波前像差参数的变化）具有最高灵敏度的高CD的变化 （或其他光刻响应参数）。 该方法还可以包括设计具有多个测试图案的量具，用于调节量具的组合响应，以产生对波前相关参数或其它光刻工艺参数的参数的特定响应。 对参数变化的敏感度可能导致对随机测量误差和/或任何其他测量误差的鲁棒性能。

    PATTERN-INDEPENDENT HYBRID MATCHING/TUNING INCLUDING LIGHT MANIPULATION BY PROJECTION OPTICS
    6.
    发明专利
    PATTERN-INDEPENDENT HYBRID MATCHING/TUNING INCLUDING LIGHT MANIPULATION BY PROJECTION OPTICS 有权

    公开(公告)号：JP2012109568A

    公开(公告)日：2012-06-07

    申请号：JP2011246521

    申请日：2011-11-10

    Applicant: ASML NETHERLANDS BV

    Inventor： FENG HANYING ,  CAO YU ,  YE JUN

    IPC: H01L21/027 ,  G02B19/00 ,  G02B21/02 ,  G03F7/20

    Abstract: PROBLEM TO BE SOLVED: To improve/optimize projection optics in a lithographic projection apparatus.SOLUTION: Methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus are described, where the matching comprises a step of optimizing illumination source and projection optics characteristics. The projection optics can be used to shape a wavefront in the lithographic projection apparatus. According to embodiments, the methods can be accelerated by using a linear fitting algorithm or using a Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

    Optimization of light source, mask, and projection optical system
    7.
    发明专利
    Optimization of light source, mask, and projection optical system 有权
    光源，掩模和投影光学系统的优化

    公开(公告)号：JP2012104823A

    公开(公告)日：2012-05-31

    申请号：JP2011242127

    申请日：2011-11-04

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： FENG HANYING ,  CAO YU ,  YE JUN

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G06F17/5068 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70258 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5009 ,  G06F2217/06 ,  G06F2217/08 ,  G06F2217/10 ,  G06F2217/12

    Abstract: PROBLEM TO BE SOLVED: To provide a method for simultaneously or alternatively optimizing lithographic apparatuses and illumination light sources, masks/design layouts and projection optical systems.SOLUTION: This method includes a step 302 of defining a multi-variable cost function of a plurality of design variables. The design variables may be associated with a characteristic step 300B of the projection optical system and an illumination light source (step 300A), and a design layout (step 300C). In a step 304, the various design variables are simultaneously adjusted so that the cost function is moved in a converging direction. In a step 306, it is determined whether a prescribed termination condition is satisfied. The prescribed termination condition may include various possibilities, i.e. the cost function may be minimized or maximized, as required by a numerical technique used. If one of the conditions in the step 306 is satisfied, the method ends. If none of the conditions in the step 306 is satisfied, the steps 304 and 306 are iteratively repeated until a desired result is obtained.

    Abstract translation: 要解决的问题：提供一种用于同时或替代地优化光刻设备和照明光源，掩模/设计布局和投影光学系统的方法。 解决方案：该方法包括定义多个设计变量的多变量成本函数的步骤302。 设计变量可以与投影光学系统和照明光源的特征步骤300B（步骤300A）和设计布局（步骤300C）相关联。 在步骤304中，同时调整各种设计变量，使得成本函数在会聚方向上移动。 在步骤306中，确定是否满足规定的终止条件。 规定的终止条件可以包括各种可能性，即成本函数可以被最小化或最大化，如所使用的数字技术所要求的。 如果步骤306中的条件之一满足，则该方法结束。 如果步骤306中的条件都不满足，则迭代地重复步骤304和306，直到获得期望的结果。 版权所有（C）2012，JPO＆INPIT

    System for creating single process window model
    8.
    发明专利
    System for creating single process window model 有权
    创建单过程窗口模型的系统

    公开(公告)号：JP2011205118A

    公开(公告)日：2011-10-13

    申请号：JP2011119390

    申请日：2011-05-27

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： YE JUN ,  CAO YU ,  LUOQI CHEN ,  LIU HUA-YU

    IPC: H01L21/027

    CPC classification number: G03F7/70641 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70625

    Abstract: PROBLEM TO BE SOLVED: To provide a system and a method for creating a focus-exposure model of a lithography process.SOLUTION: The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.

    Abstract translation: 要解决的问题：提供一种用于创建光刻工艺的聚焦曝光模型的系统和方法。解决方案：系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口内 空间。 该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需 重新校准在不同的设置。 与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

    Fast freeform source and mask co-optimization method
    9.
    发明专利
    Fast freeform source and mask co-optimization method 有权
    快速FREEFORM源和MASK优化方法

    公开(公告)号：JP2014135517A

    公开(公告)日：2014-07-24

    申请号：JP2014084536

    申请日：2014-04-16

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LUOQI CHEN ,  CAO YU ,  YE JUN

    IPC: H01L21/027 ,  G03F1/70

    CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/70083 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5068

    Abstract: PROBLEM TO BE SOLVED: To provide tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes.SOLUTION: The present invention significantly speeds up the convergence of the optimization by allowing direct computation of the gradient of a cost function. According to other aspects, the present invention allows simultaneous optimization of both the source and the mask, thereby significantly speeding up the overall convergence. According to further aspects, the present invention allows free-form optimization, without the constraints required by conventional optimization techniques.

    Abstract translation: 要解决的问题：提供用于优化用于光刻设备和工艺的照明源和掩模的工具。解决方案：本发明通过允许直接计算成本函数的梯度来显着加快优化的收敛。 根据其他方面，本发明允许同时优化源和掩模，从而显着加速整体收敛。 根据进一步的方面，本发明允许自由形式优化，而不需要常规优化技术所需的限制。

    Method for performing model-based lithography guided layout design
    10.
    发明专利
    Method for performing model-based lithography guided layout design 有权
    用于执行基于模型的LITHOGRAPHY指导布局设计的方法

    公开(公告)号：JP2013190828A

    公开(公告)日：2013-09-26

    申请号：JP2013133377

    申请日：2013-06-26

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： YE JUN ,  CAO YU ,  FEN HANNING

    IPC: G03F1/70 ,  G03F1/00 ,  G03F1/36 ,  G06F17/50 ,  G06T1/00

    CPC classification number: G06F17/5009 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/70666

    Abstract: PROBLEM TO BE SOLVED: To provide a method for creating efficient model-based sub-resolution assist features (MB-SRAF).SOLUTION: An SRAF guidance map (SGM) is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade an aerial image over a process window. In one embodiment, the SGM is used to determine SRAF placement rules and/or to finely tune already-placed SRAFs. The SGM is used directly to place SRAFs in a mask layout. Mask layout data including SRAFs is generated, wherein the SRAFs are placed according to the SGM. The SGM comprises an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of SRAF.

    Abstract translation: 要解决的问题：提供一种创建有效的基于模型的分解辅助功能（MB-SRAF）的方法。解决方案：创建SRAF指导图（SGM），其中每个设计目标边缘位置对给定的场点进行投票 关于放置在该场点上的单像素SRAF是否会改善或降级过程窗口上的空中影像。 在一个实施例中，SGM用于确定SRAF放置规则和/或微调已经放置的SRAF。 SGM直接用于将SRAF放置在掩模布局中。 生成包括SRAF的掩模布局数据，其中根据SGM放置SRAF。 SGM包括图像，其中每个像素值指示如果像素被包括为SRAF的一部分，则像素是否将对掩模布局中的特征的边缘行为有积极贡献。

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