公开(公告)号：JP2013012773A

公开(公告)日：2013-01-17

申请号：JP2012204119

申请日：2012-09-18

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： YE JUN ,  CAO YU ,  RONALDUS GOOSSENS ,  SHAO WENJIN ,  JIM KOONMEN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: B29C67/0088 ,  B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

Abstract: PROBLEM TO BE SOLVED: To provide systems and methods for performing model-based tuning and performance optimization of multiple lithography systems.SOLUTION: A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relatively to the performance of the reference scanner. The differential model may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

Abstract translation: 要解决的问题：提供用于执行多个光刻系统的基于模型的调谐和性能优化的系统和方法。

解决方案：保持目标扫描仪的型号，参考一组可调谐参数定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 相关扫描仪系列的性能可以相对于参考扫描仪的性能来表征。 差分模型可以包括诸如参数偏移和可用于模拟成像行为差异的其他差异的信息。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012220955A

公开(公告)日：2012-11-12

申请号：JP2012074557

申请日：2012-03-28

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LUOQI CHEN ,  YE JUN ,  HONG CHEN

IPC: G03F1/70 ,  G03F1/36 ,  G06F17/50 ,  H01L21/027

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70466 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/707

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus, in which a method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed.SOLUTION: The method comprises a splitting step which is configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.

Abstract translation: 要解决的问题：提供光刻设备和工艺，更具体地说，涉及用于将目标图案打印超出光刻设备的分辨率的极限的多重图形化光刻技术，其中将要成像的图案分割成 公开了通过光刻工艺将衬底经过多个子图案。 解决方案：该方法包括分离步骤，其被配置为意识到在子图案中的至少一个与用于光刻工艺的光刻设备的光学设置之间的共优化的要求。 包括基于衍射特征分析的智能图案选择的器件特征优化技术可以被集成到多个图案化工艺流程中。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012104824A

公开(公告)日：2012-05-31

申请号：JP2011242151

申请日：2011-11-04

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： FENG HANYING ,  CAO YU ,  YE JUN

IPC: H01L21/027

CPC classification number: G03F1/144 ,  G03F1/02 ,  G03F1/20 ,  G03F1/24 ,  G03F1/26 ,  G03F1/38 ,  G03F1/50 ,  G03F1/72 ,  G03F7/70141 ,  G03F7/70258 ,  G03F7/70525 ,  G06F17/10 ,  G06F17/5009 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G21K5/00 ,  Y02P90/265

Abstract: PROBLEM TO BE SOLVED: To optimize a lithographic apparatus and an illumination light source for process, and a projection optical system.SOLUTION: In a method of verifying the characteristics of a lithography projection apparatus for a reference lithography projection apparatus, optimization of the characteristics of a projection optical system is included in the verification. In order to shape the wave front of the lithography projection apparatus, projection optical components may be used. The method can be accelerated by using a linear fit algorithm, or the Taylor series expansion using partial derivative of a transmission cross coefficient (TCC).

Abstract translation: 要解决的问题：优化用于工艺的光刻设备和照明光源，以及投影光学系统。 解决方案：在验证用于参考光刻投影设备的光刻投影设备的特性的方法中，在验证中包括投影光学系统的特性的优化。 为了使光刻投影装置的波前成形，可以使用投影光学部件。 该方法可以通过使用线性拟合算法或使用传导交叉系数（TCC）的偏导数的泰勒级数展开来加速。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012044222A

公开(公告)日：2012-03-01

申请号：JP2011257068

申请日：2011-11-25

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： YE JUN ,  CAO YU ,  FEN HANNING

IPC: H01L21/027

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70991

Abstract: PROBLEM TO BE SOLVED: To provide a method of simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features.SOLUTION: The method includes the steps of: determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents an imaging result of the target design for the lithographic process. In one given embodiment, the function for simulating spatial images with focus and dose (exposure) variations is defined as the following equation, where Irepresents image intensity at nominal focus and exposure, frepresents nominal focus, f and ε represent actual focus-exposure levels at which the simulated image is calculated, and parameters "a" and "b" represent first order and second order derivative images with respect to focus change.

Abstract translation: 要解决的问题：提供一种模拟用于对具有多个特征进行成像的目标设计的光刻处理的成像性能的模拟方法。 解决方案：该方法包括以下步骤：确定用于产生模拟图像的功能，其中该功能考虑到与光刻工艺相关联的工艺变化; 并利用该功能产生模拟图像，其中模拟图像表示用于光刻工艺的目标设计的成像结果。 在一个给定的实施例中，用于模拟具有焦点和剂量（曝光）变化的空间图像的功能被定义为以下等式，其中I 0 表示标称焦点和曝光时的图像强度， f 0 表示标称焦点，f和ε表示计算模拟图像的实际聚焦曝光水平，参数“a”和“b”表示一阶和二阶 关于焦点变化的衍生图像。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2014112236A

公开(公告)日：2014-06-19

申请号：JP2013269412

申请日：2013-12-26

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： FENG HANYING ,  CAO YU ,  YE JUN ,  TSAN YUPIN

IPC: G03F1/44 ,  G03F1/36 ,  G03F1/70 ,  G06F17/50 ,  H01L21/027

CPC classification number: G03F7/706 ,  G03F7/70683

Abstract: PROBLEM TO BE SOLVED: To provide a method and a system for designing gage patterns having extremely high sensitivity to variations of parameters and having robustness to random and repetitive measurement errors in calibration of a lithography process imaging target designs having a plurality of features.SOLUTION: The method is capable of including distinguishing combinations of line width/pitch with the highest sensitivity and the optimal assist feature arrangement, which may result in changes of high CD with the highest sensitivity to variations of lithography process parameters such as variations of wave front aberration parameters (or other lithography response parameters). The method is also capable of including designing a gage having a plurality of test patterns for adjusting combination response of the gage for producing a specific response to parameters of wave front related or other lithography process parameters. The sensitivity to variations of parameters may result in robust performance to random measurement errors and/or any other measurement errors.

Abstract translation: 要解决的问题：提供一种用于设计具有对参数变化具有极高灵敏度的量具图案的方法和系统，并且具有对具有多个特征的光刻工艺成像目标设计的校准中的随机和重复测量误差的鲁棒性。解决方案： 该方法能够包括具有最高灵敏度和最佳辅助特征布置的线宽/间距的区别组合，这可能导致对于光刻工艺参数的变化（例如波前像差参数的变化）具有最高灵敏度的高CD的变化 （或其他光刻响应参数）。 该方法还可以包括设计具有多个测试图案的量具，用于调节量具的组合响应，以产生对波前相关参数或其它光刻工艺参数的参数的特定响应。 对参数变化的敏感度可能导致对随机测量误差和/或任何其他测量误差的鲁棒性能。

公开(公告)号：JP2012109568A

公开(公告)日：2012-06-07

申请号：JP2011246521

申请日：2011-11-10

Applicant: ASML NETHERLANDS BV

Inventor： FENG HANYING ,  CAO YU ,  YE JUN

IPC: H01L21/027 ,  G02B19/00 ,  G02B21/02 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To improve/optimize projection optics in a lithographic projection apparatus.SOLUTION: Methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus are described, where the matching comprises a step of optimizing illumination source and projection optics characteristics. The projection optics can be used to shape a wavefront in the lithographic projection apparatus. According to embodiments, the methods can be accelerated by using a linear fitting algorithm or using a Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

公开(公告)号：JP2012104823A

公开(公告)日：2012-05-31

申请号：JP2011242127

申请日：2011-11-04

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： FENG HANYING ,  CAO YU ,  YE JUN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G06F17/5068 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70258 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5009 ,  G06F2217/06 ,  G06F2217/08 ,  G06F2217/10 ,  G06F2217/12

Abstract: PROBLEM TO BE SOLVED: To provide a method for simultaneously or alternatively optimizing lithographic apparatuses and illumination light sources, masks/design layouts and projection optical systems.SOLUTION: This method includes a step 302 of defining a multi-variable cost function of a plurality of design variables. The design variables may be associated with a characteristic step 300B of the projection optical system and an illumination light source (step 300A), and a design layout (step 300C). In a step 304, the various design variables are simultaneously adjusted so that the cost function is moved in a converging direction. In a step 306, it is determined whether a prescribed termination condition is satisfied. The prescribed termination condition may include various possibilities, i.e. the cost function may be minimized or maximized, as required by a numerical technique used. If one of the conditions in the step 306 is satisfied, the method ends. If none of the conditions in the step 306 is satisfied, the steps 304 and 306 are iteratively repeated until a desired result is obtained.

Abstract translation: 要解决的问题：提供一种用于同时或替代地优化光刻设备和照明光源，掩模/设计布局和投影光学系统的方法。 解决方案：该方法包括定义多个设计变量的多变量成本函数的步骤302。 设计变量可以与投影光学系统和照明光源的特征步骤300B（步骤300A）和设计布局（步骤300C）相关联。 在步骤304中，同时调整各种设计变量，使得成本函数在会聚方向上移动。 在步骤306中，确定是否满足规定的终止条件。 规定的终止条件可以包括各种可能性，即成本函数可以被最小化或最大化，如所使用的数字技术所要求的。 如果步骤306中的条件之一满足，则该方法结束。 如果步骤306中的条件都不满足，则迭代地重复步骤304和306，直到获得期望的结果。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011205118A

公开(公告)日：2011-10-13

申请号：JP2011119390

申请日：2011-05-27

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： YE JUN ,  CAO YU ,  LUOQI CHEN ,  LIU HUA-YU

IPC: H01L21/027

CPC classification number: G03F7/70641 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70625

Abstract: PROBLEM TO BE SOLVED: To provide a system and a method for creating a focus-exposure model of a lithography process.SOLUTION: The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.

Abstract translation: 要解决的问题：提供一种用于创建光刻工艺的聚焦曝光模型的系统和方法。解决方案：系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口内 空间。 该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需 重新校准在不同的设置。 与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

公开(公告)号：JP2011100149A

公开(公告)日：2011-05-19

申请号：JP2010290500

申请日：2010-12-27

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： YE JUN ,  HUNSCHE STEFAN

IPC: G03F1/00 ,  H01L21/027

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/84 ,  G03F7/70441 ,  G03F7/705

Abstract: PROBLEM TO BE SOLVED: To provide a method and a system for optimizing the common process window of device design and an exposure tool by combining with a mask error model. SOLUTION: A mask is manufactured in accordance with a post-OPC mask layout (process 210). The mask is inspected to create and analyze mask inspection data and to determine systematic mask error parameters (process 212). An individual mask error model is created for the inspected mask (process 214). A lithographic process is simulated by using the individual mask error model to generate a simulate pattern (process 216). The simulate pattern is compared with a pre-OPC design layout obtained in a process 218 (process 220) to determine whether the manufactured mask demonstrates the desired patterning performance (process 222). When the mask is determined to be capable of demonstrating the desired performance, the method advances to a process 228. When not, the method continues advances to a process 224, where the mask is evaluated to determine whether it is repairable or reworkable. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种通过与掩模误差模型结合来优化设备设计的公共过程窗口和曝光工具的方法和系统。 解决方案：根据OPC后掩模布局制造掩模（过程210）。 检查掩模以创建和分析掩模检查数据并确定系统掩模误差参数（过程212）。 为检查的掩码创建单独的掩码错误模型（过程214）。 通过使用单独的掩模误差模型来生成光刻过程以产生模拟模式（过程216）。 将模拟模式与在过程218（过程220）中获得的OPC前设计布局进行比较，以确定所制造的掩模是否显示所需的图案化性能（过程222）。 当确定掩模能够表现出期望的性能时，该方法前进到过程228.否则，该方法继续前进到过程224，其中对掩模进行评估以确定其是否可修复或可再加工。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2014135517A

公开(公告)日：2014-07-24

申请号：JP2014084536

申请日：2014-04-16

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LUOQI CHEN ,  CAO YU ,  YE JUN

IPC: H01L21/027 ,  G03F1/70

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/70083 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5068

Abstract: PROBLEM TO BE SOLVED: To provide tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes.SOLUTION: The present invention significantly speeds up the convergence of the optimization by allowing direct computation of the gradient of a cost function. According to other aspects, the present invention allows simultaneous optimization of both the source and the mask, thereby significantly speeding up the overall convergence. According to further aspects, the present invention allows free-form optimization, without the constraints required by conventional optimization techniques.

Abstract translation: 要解决的问题：提供用于优化用于光刻设备和工艺的照明源和掩模的工具。解决方案：本发明通过允许直接计算成本函数的梯度来显着加快优化的收敛。 根据其他方面，本发明允许同时优化源和掩模，从而显着加速整体收敛。 根据进一步的方面，本发明允许自由形式优化，而不需要常规优化技术所需的限制。