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    Methods and systems for pattern design with adjusted response to wavefront aberration
    1.
    发明专利
    Methods and systems for pattern design with adjusted response to wavefront aberration 有权
    用于模式设计的方法和系统，具有对WAVEFRONT ABERRATION的调整响应

    公开(公告)号：JP2013021321A

    公开(公告)日：2013-01-31

    申请号：JP2012148374

    申请日：2012-07-02

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： FENG HANYING ,  CAO YU ,  YE JUN ,  TSAN YUPIN

    IPC: H01L21/027 ,  G03F1/36

    CPC classification number: G03F7/706 ,  G03F7/70683

    Abstract: PROBLEM TO BE SOLVED: To provide methods and systems for designing gauge patterns that are extremely sensitive to parameter variations, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features.SOLUTION: The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement, which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variations. The method may also include designing gauges which have a plurality of test patterns, such that a combined response of the gauge can be adjusted to generate a specific response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variations leads to robust performance against random measurement error and/or any other measurement errors.

    Abstract translation: 要解决的问题：提供用于设计对参数变化非常敏感的规格图案的方法和系统，并且因此对于用于对具有多个图像的目标设计进行成像的光刻工艺的校准中的随机和重复测量误差是鲁棒的 特征。 解决方案：该方法可以包括用最佳辅助特征放置来识别最敏感的线宽/间距组合，这导致对光刻过程参数变化（例如波前像差参数变化）的最敏感的CD（或其他光刻响应参数）变化。 该方法还可以包括设计具有多个测试图案的计量器，使得能够调整量规的组合响应以产生与波前相关或其它平版印刷工艺参数的特定响应。 对参数变化的敏感性会导致对随机测量误差和/或任何其他测量误差的强大性能。 版权所有（C）2013，JPO＆INPIT

    Optimization flows of source, mask and projection optics
    2.
    发明专利
    Optimization flows of source, mask and projection optics 有权
    源，掩模和投影光学的优化流程

    公开(公告)号：JP2012104821A

    公开(公告)日：2012-05-31

    申请号：JP2011240811

    申请日：2011-11-02

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： CHU DWAN FU STEPHAN ,  LUOQI CHEN ,  FENG HANYING ,  RAPHAEL C HOWELL ,  ZHOU XINJIAN ,  CHEN YIH-FARN ROBIN

    IPC: H01L21/027 ,  G03F1/68

    CPC classification number: G03F7/70066 ,  G03F7/705

    Abstract: PROBLEM TO BE SOLVED: To provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein.SOLUTION: The current embodiments include several flows optimizing a source, a mask, and projection optics, and various sequential iterative optimization steps combining any of the projection optics, the mask and the source. The projection optics are sometimes broadly referred to as "lenses", and therefore the optimization process may be termed source mask lens optimization (SMLO). The SMLO may be desirable over an existing source mask optimization (SMO) process or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.

    Abstract translation: 要解决的问题：提供优化包括优化其中的投影光学元件的光刻投影装置的方法。 解决方案：当前实施例包括优化源，掩模和投影光学器件的多个流以及组合投影光学元件，掩模和源中的任何一个的各种顺序迭代优化步骤。 投影光学器件有时被广泛地称为“透镜”，因此优化过程可以被称为源掩模透镜优化（SMLO）。 SMLO可能比现有的源掩码优化（SMO）过程或不包括投影光学优化的其它优化过程更为理想，部分原因是在优化中包括投影光学器件可能通过引入多个可调特性而导致更大的工艺窗口 的投影光学元件。 版权所有（C）2012，JPO＆INPIT

    Method and system for pattern design with adjusted response to wave front aberration
    4.
    发明专利
    Method and system for pattern design with adjusted response to wave front aberration 有权
    用于模式设计的方法和系统，具有调整的响应以进行波前失真

    公开(公告)号：JP2014112236A

    公开(公告)日：2014-06-19

    申请号：JP2013269412

    申请日：2013-12-26

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： FENG HANYING ,  CAO YU ,  YE JUN ,  TSAN YUPIN

    IPC: G03F1/44 ,  G03F1/36 ,  G03F1/70 ,  G06F17/50 ,  H01L21/027

    CPC classification number: G03F7/706 ,  G03F7/70683

    Abstract: PROBLEM TO BE SOLVED: To provide a method and a system for designing gage patterns having extremely high sensitivity to variations of parameters and having robustness to random and repetitive measurement errors in calibration of a lithography process imaging target designs having a plurality of features.SOLUTION: The method is capable of including distinguishing combinations of line width/pitch with the highest sensitivity and the optimal assist feature arrangement, which may result in changes of high CD with the highest sensitivity to variations of lithography process parameters such as variations of wave front aberration parameters (or other lithography response parameters). The method is also capable of including designing a gage having a plurality of test patterns for adjusting combination response of the gage for producing a specific response to parameters of wave front related or other lithography process parameters. The sensitivity to variations of parameters may result in robust performance to random measurement errors and/or any other measurement errors.

    Abstract translation: 要解决的问题：提供一种用于设计具有对参数变化具有极高灵敏度的量具图案的方法和系统，并且具有对具有多个特征的光刻工艺成像目标设计的校准中的随机和重复测量误差的鲁棒性。解决方案： 该方法能够包括具有最高灵敏度和最佳辅助特征布置的线宽/间距的区别组合，这可能导致对于光刻工艺参数的变化（例如波前像差参数的变化）具有最高灵敏度的高CD的变化 （或其他光刻响应参数）。 该方法还可以包括设计具有多个测试图案的量具，用于调节量具的组合响应，以产生对波前相关参数或其它光刻工艺参数的参数的特定响应。 对参数变化的敏感度可能导致对随机测量误差和/或任何其他测量误差的鲁棒性能。

    PATTERN-INDEPENDENT HYBRID MATCHING/TUNING INCLUDING LIGHT MANIPULATION BY PROJECTION OPTICS
    5.
    发明专利
    PATTERN-INDEPENDENT HYBRID MATCHING/TUNING INCLUDING LIGHT MANIPULATION BY PROJECTION OPTICS 有权

    公开(公告)号：JP2012109568A

    公开(公告)日：2012-06-07

    申请号：JP2011246521

    申请日：2011-11-10

    Applicant: ASML NETHERLANDS BV

    Inventor： FENG HANYING ,  CAO YU ,  YE JUN

    IPC: H01L21/027 ,  G02B19/00 ,  G02B21/02 ,  G03F7/20

    Abstract: PROBLEM TO BE SOLVED: To improve/optimize projection optics in a lithographic projection apparatus.SOLUTION: Methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus are described, where the matching comprises a step of optimizing illumination source and projection optics characteristics. The projection optics can be used to shape a wavefront in the lithographic projection apparatus. According to embodiments, the methods can be accelerated by using a linear fitting algorithm or using a Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

    Optimization of light source, mask, and projection optical system
    6.
    发明专利
    Optimization of light source, mask, and projection optical system 有权
    光源，掩模和投影光学系统的优化

    公开(公告)号：JP2012104823A

    公开(公告)日：2012-05-31

    申请号：JP2011242127

    申请日：2011-11-04

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： FENG HANYING ,  CAO YU ,  YE JUN

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G06F17/5068 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70258 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5009 ,  G06F2217/06 ,  G06F2217/08 ,  G06F2217/10 ,  G06F2217/12

    Abstract: PROBLEM TO BE SOLVED: To provide a method for simultaneously or alternatively optimizing lithographic apparatuses and illumination light sources, masks/design layouts and projection optical systems.SOLUTION: This method includes a step 302 of defining a multi-variable cost function of a plurality of design variables. The design variables may be associated with a characteristic step 300B of the projection optical system and an illumination light source (step 300A), and a design layout (step 300C). In a step 304, the various design variables are simultaneously adjusted so that the cost function is moved in a converging direction. In a step 306, it is determined whether a prescribed termination condition is satisfied. The prescribed termination condition may include various possibilities, i.e. the cost function may be minimized or maximized, as required by a numerical technique used. If one of the conditions in the step 306 is satisfied, the method ends. If none of the conditions in the step 306 is satisfied, the steps 304 and 306 are iteratively repeated until a desired result is obtained.

    Abstract translation: 要解决的问题：提供一种用于同时或替代地优化光刻设备和照明光源，掩模/设计布局和投影光学系统的方法。 解决方案：该方法包括定义多个设计变量的多变量成本函数的步骤302。 设计变量可以与投影光学系统和照明光源的特征步骤300B（步骤300A）和设计布局（步骤300C）相关联。 在步骤304中，同时调整各种设计变量，使得成本函数在会聚方向上移动。 在步骤306中，确定是否满足规定的终止条件。 规定的终止条件可以包括各种可能性，即成本函数可以被最小化或最大化，如所使用的数字技术所要求的。 如果步骤306中的条件之一满足，则该方法结束。 如果步骤306中的条件都不满足，则迭代地重复步骤304和306，直到获得期望的结果。 版权所有（C）2012，JPO＆INPIT

    PATTERN-DEPENDENT PROXIMITY MATCHING/TUNING INCLUDING LIGHT MANIPULATION BY PROJECTION OPTICS.
    9.
    发明专利
    PATTERN-DEPENDENT PROXIMITY MATCHING/TUNING INCLUDING LIGHT MANIPULATION BY PROJECTION OPTICS. 未知

    公开(公告)号：NL2007579A

    公开(公告)日：2012-05-14

    申请号：NL2007579

    申请日：2011-10-12

    Applicant: ASML NETHERLANDS BV

    Inventor： FENG HANYING ,  CAO YU ,  YE JUN

    IPC: G03F7/20

    Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

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