公开(公告)号：KR20100114851A

公开(公告)日：2010-10-26

申请号：KR20100034946

申请日：2010-04-15

Applicant: ASML NETHERLANDS BV

Inventor： DE WINTER LAURENTIUS CORNELIUS ,  FINDERS JOZEF MARIA

IPC: H01L21/027

CPC classification number: G03F7/70308 ,  G03F7/70258 ,  G03F7/70266 ,  G03F7/70283 ,  H01L21/0274 ,  H01L21/0337

Abstract: PURPOSE: A method for manufacturing a device and a lithography apparatus are provided to reduce the unbalance of the intensity of radiated ray by regulating the phases of diffracted radiation ray. CONSTITUTION: Radiation ray beam is used for illuminating the mask pattern of an alternating phase shift mask in order to obtain diffracted radiation ray beam(DB). The mask pattern is formed on a substrate using a projection system. The phases of the diffracted radiation ray beam are regulated using an optical phase regulator.

Abstract translation: 目的：提供一种用于制造器件和光刻设备的方法，以通过调节衍射辐射射线的相位来减少辐射强度的不平衡。 构成：辐射射线束用于照射交替相移掩模的掩模图案，以获得衍射辐射束（DB）。 掩模图案使用投影系统形成在基板上。 使用光学相位调节器来调节衍射辐射束的相位。

公开(公告)号：JP2010130010A

公开(公告)日：2010-06-10

申请号：JP2009263436

申请日：2009-11-19

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DE WINTER LAURENTIUS CORNELIUS ,  FINDERS JOZEF MARIA

IPC: H01L21/027 ,  G03F7/207

CPC classification number: G03B27/42 ,  G03F7/70308

Abstract: PROBLEM TO BE SOLVED: To provide a method for increasing a depth of focus of a lithographic apparatus. SOLUTION: The method includes: a step of forming a diffracted beam of radiation by radiating a patterning device pattern with a radiation beam; illuminating a phase modulation element with the diffracted beams of radiation; and a step of transforming a phase-wavefront of a portion of the diffracted beams of radiation into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second focal plane for the lithographic apparatus, wherein the transforming step includes: a step of subjecting a phase of a first portion of a first diffracted beam of radiation and a phase of a corresponding first portion of a second diffracted beam of radiation to a phase change which results in an at least partial formation of the first phase-wavefront; and subjecting a phase of a second portion of the first diffracted beam of radiation and a phase of a corresponding second portion of the second diffracted beam of radiation to a phase change which results in an at least partial formation of the second phase-wavefront. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于增加光刻设备的焦深的方法。 解决方案：该方法包括：通过用辐射束辐射图案形成装置图案来形成衍射光束的步骤; 用衍射光束照射相位调制元件; 以及将衍射的辐射束的一部分的相位波前变换为具有用于光刻设备的第一焦平面的第一相位波段和具有用于光刻设备的第二焦平面的第二相位波前的步骤， 其中所述变换步骤包括：使第一衍射光束的第一部分的相位和第二衍射光束的对应的第一部分的相位相位相变的步骤，所述相位变化导致至少部分形成 的第一相波前; 并且使所述第一衍射光束的第二部分的相位和所述第二衍射光束的对应第二部分的相位相位变化，所述相位变化导致所述第二相位波前的至少部分形成。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2002334835A

公开(公告)日：2002-11-22

申请号：JP2002095774

申请日：2002-03-29

Applicant: ASML NETHERLANDS BV

Inventor： BASELMANS JOHANNES JACOBUS MAT ,  ENGELEN ADRIANUS FRANCISCUS PE ,  CRAMER HUGO AUGUSTINUS JOSEPH ,  FINDERS JOZEF MARIA ,  KOHLER CARSTEN

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a device that acquires the aberration of the projection system of a lithographic projector, in terms of Zernike expansion. SOLUTION: The field distribution of displacement errors and the focal plane distortion of a projected image are calculated based on Zernike aberration which quantifies the relation between a Zernike aberration components and the error of the image and a sensitivity coefficient. Then the compensation applied to the lithographic projector for minimizing the error of the image is determined by executing calculation and applied to the projector. The compensation increases one component of the aberration of the projector in order to lower the effects of the other aberrations, and consequently, the quality of the image as a whole is improved.

公开(公告)号：JP2012004579A

公开(公告)日：2012-01-05

申请号：JP2011165523

申请日：2011-07-28

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： FINDERS JOZEF MARIA

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70891 ,  G03F7/70258 ,  G03F7/70308

Abstract: PROBLEM TO BE SOLVED: To improve image characteristics in lithographic equipment.SOLUTION: A lithographic equipment includes a phase adjuster that adjusts the phase of a light wave crossing an optical device of the phase adjuster while exposing a pattern onto a substrate. In one embodiment, the optical device is a thermally controllable optical device in a projection system of the lithographic equipment. In use, the pattern is illuminated in illumination mode containing off-axis radiation beam. This beam is diffracted with zeroth and first-order diffraction beams slanted inversely and asymmetrically relative to an optical axis. An area the first-order diffraction beam crosses the optical device is characterized. The image characteristics of the pattern is optimized by calculating the optical phase of a preferable first-order diffraction beam relative to the optical phase of the zeroth diffraction beam. The phase adjuster is controlled so as to apply the preferable optical phase to the first-order diffraction beam.

Abstract translation: 要解决的问题：为了改善平版印刷设备的图像特性。 解决方案：光刻设备包括相位调节器，该相位调节器在将图案暴露在基板上的同时调节与相位调节器的光学装置相交的光波的相位。 在一个实施例中，光学装置是光刻设备的投影系统中的热可控光学装置。 在使用中，图案在包含离轴辐射束的照明模式中被照亮。 该光束以相对于光轴反向和不对称倾斜的零级和一级衍射光束衍射。 其特征在于，一阶衍射光束穿过光学器件的区域。 通过计算相对于零级衍射光束的光学相位的优选的一级衍射光束的光学相位来优化图案的图像特性。 控制相位调节器以将优选的光学相位施加到一次衍射光束。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010287890A

公开(公告)日：2010-12-24

申请号：JP2010127746

申请日：2010-06-03

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： NIKOLSKI PIOTER ,  FINDERS JOZEF MARIA ,  GROENENDIJK REMCO JOCHEM SEBASTIAAN

IPC: H01L21/027

CPC classification number: G03F7/70641 ,  G03F7/40 ,  G03F7/70533 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338

Abstract: PROBLEM TO BE SOLVED: To form a pattern on a substrate regularly and uniformly as much as possible in spacer lithographic processing.
SOLUTION: A lithographic method includes steps of: exposing a first material layer to a radiation beam whose focal characteristic is controlled so as to control a sidewall angle of sidewalls in order to form a first pattern feature having the sidewalls on the first material layer; forming a second material layer for forming coating on the sidewalls of the first pattern on the first pattern; removing a part of the second layer to leave the coating of the second layer on the sidewalls of the first pattern; removing the first pattern formed on a first layer to leave at least a part of the second layer forming the coating on the sidewalls of the first pattern on the substrate; and forming a second pattern feature on a position adjacent to the sidewall position of the first pattern feature in which a part of the second layer is removed.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：在间隔光刻处理中尽可能地定期地和均匀地在衬底上形成图案。 解决方案：光刻方法包括以下步骤：将第一材料层暴露于其焦点特性被控制以控制侧壁的侧壁角度的辐射束，以便形成在第一材料上具有侧壁的第一图案特征 层; 形成用于在所述第一图案上的所述第一图案的侧壁上形成涂层的第二材料层; 去除第二层的一部分以将第二层的涂层留在第一图案的侧壁上; 去除形成在第一层上的第一图案，以将形成涂层的第二层的至少一部分留在基板上的第一图案的侧壁上; 以及在与所述第一图案特征的侧壁位置相邻的位置处形成第二图案特征，其中所述第二层的一部分被去除。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010123948A

公开(公告)日：2010-06-03

申请号：JP2009256616

申请日：2009-11-10

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DE WINTER LAURENTIUS CORNELIUS ,  FINDERS JOZEF MARIA

IPC: H01L21/027 ,  G03F7/207

CPC classification number: G03F7/70641 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  G03F7/70891

Abstract: PROBLEM TO BE SOLVED: To provide a method of acquiring information at least indicative of a focal property of a lithographic apparatus. SOLUTION: The method includes steps of: illuminating a patterning device pattern with a radiation beam having a symmetric illumination mode, the patterning device pattern having a first pattern feature that substantially diffracts radiation, and a second pattern feature that does not substantially diffract radiation; introducing an asymmetry relative to an optical axis, in the substantially diffracted radiation element, through illuminating the phase modulation element with radiation emanating from the patterning device pattern; forming a receiving element pattern on the receiving element by illuminating a radiation beam receiving element with radiation emanating from the phase modulation element, the receiving element pattern having first and second features related to the first and second patterns respectively; acquiring positional information regarding relative positions of the first and second features; and determining information at least indicative of the focal property of the lithographic apparatus from the acquired positional information. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供获取至少指示光刻设备的焦点特性的信息的方法。 解决方案：该方法包括以下步骤：利用具有对称照明模式的辐射束照射图案形成装置图案，图案形成装置图案具有基本上衍射辐射的第一图案特征和基本上不衍射的第二图案特征 辐射; 通过利用从图案形成装置图案发出的辐射照射相位调制元件，在基本衍射的辐射元件中引入相对于光轴的不对称性; 通过用从所述相位调制元件发出的辐射照射辐射束接收元件在所述接收元件上形成接收元件图案，所述接收元件图案分别具有与所述第一和第二图案相关的第一和第二特征; 获取关于所述第一和第二特征的相对位置的位置信息; 以及从获取的位置信息确定至少指示光刻设备的焦点特性的信息。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010166034A

公开(公告)日：2010-07-29

申请号：JP2009280123

申请日：2009-12-10

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： MOS EVERHARDUS CORNELIS ,  FINDERS JOZEF MARIA ,  MIDDLEBROOKS SCOTT ANDERSON ,  WANGLI DONGZI ,  DE MOL CHRISTIANUS GERARDUS MARIA ,  DUSA MIRCEA

IPC: H01L21/027 ,  H01L21/3065

CPC classification number: G03B27/42 ,  G03F7/705

Abstract: PROBLEM TO BE SOLVED: To provide a method of optimizing a method for double patterning.
SOLUTION: This optimization method records control variables such as a control dose and a focal point, in each of processes in a double patterning lithographic process, and measures characteristics of intermediate features such as a critical dimension and a sidewall angle in a double patterning process. Then, the final feature is modeled, and a disturbance between a measured value and a model is measured, and the values of the control variables are optimized.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种优化双重图案化方法的方法。

解决方案：该优化方法在双重图案化平版印刷工艺中的每个处理中记录诸如控制剂量和焦点的控制变量，并测量中间特征的特征，例如双重的临界尺寸和侧壁角度 图案化过程。 然后，对最终特征进行建模，并测量测量值和模型之间的干扰，并优化控制变量的值。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010034554A

公开(公告)日：2010-02-12

申请号：JP2009168334

申请日：2009-07-17

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DE PUTTER SANDER ,  FINDERS JOZEF MARIA ,  VLEEMING BERTUS JOHAN

IPC: H01L21/027 ,  G03F1/08

CPC classification number: G03F7/0035 ,  G03F1/36 ,  G03F7/203 ,  G03F7/70283 ,  G03F7/70341 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/70466

Abstract: PROBLEM TO BE SOLVED: To provide a technique capable of forming a feature of a critical dimension smaller than a limit of a single exposure step. SOLUTION: A multiple-exposure lithographic process in which a developed resist pattern derived from a first exposure is present within a second resist layer that is exposed in a second exposure of the multiple-exposure lithographic process. A second mask pattern used in a second exposure process includes at least one localized adjustment to at least one feature thereof to compensate for scattering effects of the developed resist pattern that is present when the second exposure is performed. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供能够形成临界尺寸小于单个曝光步骤的极限的特征的技术。 解决方案：多次曝光光刻工艺，其中在第一曝光中的第二次曝光中曝光的第二抗蚀剂层内存在来自第一曝光的显影抗蚀剂图案。 在第二曝光过程中使用的第二掩模图案包括对至少一个特征的至少一个局部调整，以补偿当执行第二曝光时存在的显影抗蚀剂图案的散射效应。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010010674A

公开(公告)日：2010-01-14

申请号：JP2009140279

申请日：2009-06-11

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： FINDERS JOZEF MARIA

IPC: H01L21/027

CPC classification number: G03F7/70141 ,  G03F7/70191 ,  G03F7/70466

Abstract: PROBLEM TO BE SOLVED: To reduce a CD error (an obtained limit dimension of a minimum feature printed by lithography) by optical proximity effect.
SOLUTION: A lithographic apparatus includes a phase adjuster to adjust a phase of an optical wave traversing an optical element of the phase adjuster during exposure of a pattern on a substrate. In an embodiment, an optical element is a heat controllable optical element in a projection system of the lithographic apparatus. In use, a pattern is illuminated with an illumination mode including an off-axis radiation beam. This beam is diffracted into a number of first-order diffracted beams, one is associated with a first pitch in the pattern along a first direction, another is associated with a second pitch along a different, second direction in the pattern. An area is identified where the first-order diffracted beam associated with the first pitch traverses the optical element. An image characteristic of an image of the pattern is optimized by calculating a desired optical phase of this first-order diffracted beam in relation to the optical phase of the other first-order diffracted beam. The phase adjuster is controlled to apply the desired optical phase to the first-order diffracted beam.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：通过光学邻近效应来减少CD误差（通过光刻印刷的最小特征的获得的极限尺寸）。 解决方案：光刻设备包括相位调节器，以在曝光基板上的图案时调节穿过相位调节器的光学元件的光波的相位。 在一个实施例中，光学元件是光刻设备的投影系统中的热可控光学元件。 在使用中，用包括离轴辐射束的照明模式照亮图案。 该光束被衍射成多个一阶衍射光束，一个沿着第一方向与图案中的第一间距相关联，另一个与图案中沿着不同的第二方向的第二间距相关联。 识别与第一音调相关联的一阶衍射光束穿过光学元件的区域。 通过计算相对于其它一级衍射光束的光学相位的该一级衍射光束的期望光学相位来优化图案的图像的图像特性。 控制相位调节器以将期望的光学相位施加到一阶衍射光束。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2013148898A

公开(公告)日：2013-08-01

申请号：JP2013003300

申请日：2013-01-11

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： FINDERS JOZEF MARIA

IPC: G03F1/32 ,  G03F1/54

CPC classification number: G01B11/06 ,  G03F1/38

Abstract: PROBLEM TO BE SOLVED: To provide a mask which eliminates or reduces the occurrence of phase offset undesirable for patterned radiation.SOLUTION: A lithographic mask includes a substrate which allows radiation having a specific wavelength to substantially transmit therethrough. The substrate includes a radiation absorption material with a specific pattern. The pattern is configured to impart a further pattern to the cross section of the radiation beam having a specific wavelength. The thickness of the absorption material is substantially equal to the value of the specific wavelength divided by the refractive index of the absorption material.

Abstract translation: 要解决的问题：提供消除或减少不利于图案化辐射的相位偏移的出现的掩模。解决方案：光刻掩模包括允许具有特定波长的辐射基本上透射通过的基板。 衬底包括具有特定图案的辐射吸收材料。 该图案被配置为向具有特定波长的辐射束的横截面赋予另外的图案。 吸收材料的厚度基本上等于特定波长的值除以吸收材料的折射率。