公开(公告)号：JP2003318103A

公开(公告)日：2003-11-07

申请号：JP2003067367

申请日：2003-03-12

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： GALBURT DANIEL N

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70758 ,  G03F7/70833 ,  G03F7/709

Abstract: PROBLEM TO BE SOLVED: To provide a method, a system and an apparatus for reducing reaction loads between components, vibration of a support mechanism, and relative movement, in a lithography system. SOLUTION: The lithography system consists of a non-isolated structure and an isolated structure which is supported by the non-isolated structure. The isolated structure is provided with a movable stage supported by the isolated structure; a linear motor including a first linear motor element and a second linear motor element, in which the first linear motor element is coupled to the movable stage; a plurality of flexure plates for mounting the second linear motor element on the isolated structure; and a flexure rod coupled between the non-isolated structure and the second linear motor element. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种用于在光刻系统中减少部件之间的反作用力，支撑机构的振动和相对运动的方法，系统和装置。 解决方案：光刻系统由非隔离结构和由非隔离结构支撑的隔离结构组成。 隔离结构设置有由隔离结构支撑的可移动台; 包括第一线性马达元件和第二线性马达元件的线性马达，其中所述第一线性马达元件联接到所述可移动台; 多个弯曲板，用于将第二线性马达元件安装在隔离结构上; 以及耦合在所述非隔离结构和所述第二线性电动机元件之间的挠曲杆。 版权所有（C）2004，JPO

公开(公告)号：JP2004312002A

公开(公告)日：2004-11-04

申请号：JP2004105078

申请日：2004-03-31

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： VAN DER PASCH ENGELBERTUS ANTO ,  BEEMS MARCEL HENDRIKUS MARIA ,  LOOPSTRA ERIK ROELOF ,  MEIJER HENDRICUS JOHANNES MARI ,  GALBURT DANIEL N

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F7/70775 ,  G03F7/70233 ,  G03F7/70283 ,  G03F7/70725 ,  G03F9/7003 ,  G03F9/7034

Abstract: PROBLEM TO BE SOLVED: To provide a method for Y-direction position correction of masked object shifts caused by Z-direction offset and oblique lighting.
SOLUTION: In a reflective lithographic projection apparatus, shifts of a mask pattern image in the scanning direction, which are caused by changes in the position of the mask pattern surface along the optical axis, are corrected by shifting the relative position(s) of the mask and/or a substrate in the scanning direction. Rotating the relative position(s) of the mask and/or the substrate around the optical axis can correct image rotation errors. After installing the mask in the lithographic projection apparatus, changes in the position of the mask pattern surface along the optical axis can be determined by using an interferometer. These changes can be mapped and stored to be used for controlling the lithographic projection apparatus.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：DE602004021309D1

公开(公告)日：2009-07-16

申请号：DE602004021309

申请日：2004-04-05

Applicant: ASML NETHERLANDS BV

Inventor： VAN DER PASCH ENGELBERTUS ANTONIUS F ,  BEEMS MARCEL HENDRIKUS MARIA ,  LOOPSTRA ERIK ROELOF ,  MEIJER HENDRICUS JOHANNES MARIA ,  GALBURT DANIEL N

IPC: G03F9/00 ,  G03F7/20 ,  H01L21/027

公开(公告)号：SG143037A1

公开(公告)日：2008-06-27

申请号：SG2004018925

申请日：2004-04-02

Applicant: ASML NETHERLANDS BV

Inventor： VAN DER PASCH ENGELBERTUS ANTO ,  BEEMS MARCEL HENDRIKUS MARIA ,  LOOPSTRA ERIK ROELOF ,  MEIJER HENDRICUS JOHANNES MARI ,  GALBURT DANIEL N

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

Abstract: POSITION CORRECTION IN Y OF MASK OBJECT SHIFT DUE TO Z OFFSET AND NON- PERPENDICULAR ILLUMINATION In a reflective lithographic projection apparatus, shifts in the image of a pattern of a mask in the scanning direction caused by variations in the position of the pattern surface of the mask along the optical axis are corrected by shifting of the relative position of the mask and/or the substrate in the scanning direction. Correction of the image rotation error may also be accomplished by rotation of the relative positions of the mask and/or the substrate about the optical axis. Variations in the position of the pattern surface of the mask along the optical axis may be determined by interferometers upon installation of the mask to the lithographic projection apparatus. The variations may be mapped and stored to provide control of the lithographic projection apparatus.