公开(公告)号：NL2004716A

公开(公告)日：2010-12-20

申请号：NL2004716

申请日：2010-05-12

Applicant: ASML NETHERLANDS BV

Inventor： SCHOUMANS NICOLE ,  MOS EVERHARDUS ,  HEPP BIRGITT ,  GROENENDIJK REMCO

IPC: G03F7/20

公开(公告)号：NL2005424A

公开(公告)日：2011-05-02

申请号：NL2005424

申请日：2010-09-30

Applicant: ASML NETHERLANDS BV

Inventor： BUTLER HANS ,  GROENENDIJK REMCO

IPC: G03F7/20

Abstract: A method is disclosed. A change in position of a substrate in a direction substantially parallel to a direction of propagation of a radiation beam that is, or is to be, projected on to that substrate is determined, which change in position would result in a lithographic error in the application of a pattern to that substrate using that radiation beam. The change in position of the substrate is used to control a property of the radiation beam when, or as, the radiation beam is projected onto the substrate in order to reduce the lithographic error.

公开(公告)号：NL2004545A

公开(公告)日：2010-12-13

申请号：NL2004545

申请日：2010-04-13

Applicant: ASML NETHERLANDS BV

Inventor： NIKOLSKY PETER ,  FINDERS JOZEF ,  GROENENDIJK REMCO

IPC: G03F7/20

Abstract: A lithographic method includes exposing a first layer of material to a radiation beam to form a first pattern feature in the first layer, the first pattern feature having sidewalls, and a focal property of the radiation beam being controlled to control a sidewall angle of the sidewalls; providing a second layer of material over the first pattern feature to provide a coating on sidewalls of the first pattern; removing a portion of the second layer, leaving a coating of the second layer of material on sidewalls of the first pattern; removing the first pattern formed from the first layer, leaving on the substrate at least a part of the second layer that formed a coating on sidewalls of that first pattern, the part of the second layer left forming second pattern features in locations adjacent to the locations of sidewalls of the removed first pattern feature.