公开(公告)号：NL2009555A

公开(公告)日：2013-04-08

申请号：NL2009555

申请日：2012-10-02

Applicant: ASML NETHERLANDS BV

Inventor： NGUYEN THANH ,  FINDERS JOZEF ,  KETELAARS WILHELMUS ,  WUISTER SANDER ,  HEIJDEN EDDY ,  MEESSEN HIERONYMUS ,  KOOLE ROELOF ,  PEETERS EMIEL ,  HEESCH CHRIS ,  BRIZARD AURELIE ,  BOOTS HENRI ,  DRUZHININA TAMARA ,  RUITER JESSICA

IPC: G03F7/20

公开(公告)号：NL2003640A

公开(公告)日：2010-05-18

申请号：NL2003640

申请日：2009-10-14

Applicant: ASML NETHERLANDS BV

Inventor： WINTER LAURENTIUS ,  FINDERS JOZEF

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/68

公开(公告)号：NL2011228A

公开(公告)日：2014-02-10

申请号：NL2011228

申请日：2013-07-26

Applicant: ASML NETHERLANDS BV

Inventor： FINDERS JOZEF ,  WUISTER SANDER ,  PEETERS EMIEL ,  BOOTS HENRI ,  DRUZHININA TAMARA ,  HEESCH CHRIS ,  HEIJDEN EDDY

IPC: G03F7/20

公开(公告)号：NL2010025A

公开(公告)日：2013-07-18

申请号：NL2010025

申请日：2012-12-20

Applicant: ASML NETHERLANDS BV

Inventor： FINDERS JOZEF

IPC: G03F7/20

Abstract: A lithographic mask has a substrate substantially transmissive for radiation of a certain wavelength, the substrate having a radiation absorbing material in an arrangement, the arrangement configured to apply a pattern to a cross-section of a radiation beam of the certain wavelength, wherein the absorbing material has a thickness which is substantially equal to the certain wavelength divided by a refractive index of the absorbing material.

公开(公告)号：NL2004323A

公开(公告)日：2010-10-18

申请号：NL2004323

申请日：2010-03-02

Applicant: ASML NETHERLANDS BV

Inventor： WINTER LAURENTIUS ,  FINDERS JOZEF

IPC: G03F7/20

公开(公告)号：NL2003919A

公开(公告)日：2010-06-28

申请号：NL2003919

申请日：2009-12-08

Applicant: ASML NETHERLANDS BV

Inventor： MOS EVERHARDUS ,  FINDERS JOZEF ,  MIDDLEBROOKS SCOTT ,  WANGLI DONGZI ,  MOL CHRISTIANUS ,  DUSA MIRCEA

IPC: H01L21/027

Abstract: Variables in each step in a double patterning lithographic process are recorded and characteristics of intermediate features in a double patterning process measured. The final feature is then modeled, and the values of the variables optimized.

公开(公告)号：NL2003990A

公开(公告)日：2010-07-01

申请号：NL2003990

申请日：2009-12-21

Applicant: ASML NETHERLANDS BV

Inventor： MEGENS HENRICUS ,  KIERS ANTOINE ,  FINDERS JOZEF ,  QUAEDACKERS JOHANNES ,  SCHAAR MAURITS ,  VERSTAPPEN LEONARDUS ,  LEEWIS CHRISTIAN ,  LAARHOVEN HENDRIK

IPC: G01N21/47 ,  G03F7/20

公开(公告)号：NL2003806A

公开(公告)日：2010-06-16

申请号：NL2003806

申请日：2009-11-16

Applicant: ASML NETHERLANDS BV

Inventor： SANTAMARIA LUIS ALBERTO COLINA ,  FINDERS JOZEF ,  WINTER LAURENTIUS

IPC: G03F7/20

Abstract: In an embodiment, there is provided a method of at least partially compensating for a deviation in a property of a pattern feature to be applied to a substrate using a lithographic apparatus. The method includes determining a desired phase change to be applied to at least a portion of a radiation beam that is to be used to apply the pattern feature to the substrate and which would at least partially compensate for the deviation in the property. The determination of the desired phase change includes determining a desired configuration of a phase modulation element. The method further includes implementing the desired phase change to the portion of the radiation beam when applying the pattern feature to the substrate, the implementation of the desired phase change comprising illuminating the phase modulation element with the portion of the radiation beam when the phase modulation element is in the desired configuration.

公开(公告)号：NL2003689A

公开(公告)日：2010-05-27

申请号：NL2003689

申请日：2009-10-22

Applicant: ASML NETHERLANDS BV

Inventor： WINTER LAURENTIUS ,  FINDERS JOZEF

IPC: G03F7/20

Abstract: A method of increasing a depth of focus of a lithographic apparatus is disclosed. The method includes forming diffracted beams of radiation using a patterning device pattern; and transforming a phase-wavefront of a portion of the diffracted beams into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second, different focal plane, wherein the transforming comprises: subjecting a phase of a first portion of a first diffracted beam and a phase of a corresponding first portion of a second diffracted beam to a phase change which results in an at least partial formation of the first phase-wavefront, and subjecting a phase of a second portion of the first diffracted beam and a phase of a corresponding second portion of the second diffracted beam to a phase change which results in an at least partial formation of the second phase-wavefront.

公开(公告)号：NL2010402A

公开(公告)日：2013-10-01

申请号：NL2010402

申请日：2013-03-06

Applicant: ASML NETHERLANDS BV

Inventor： SINGH HARMEET ,  BANINE VADIM ,  FINDERS JOZEF ,  WUISTER SANDER ,  KOOLE ROELOF ,  PEETERS EMIEL

IPC: G03F7/20