公开(公告)号：JP2011003894A

公开(公告)日：2011-01-06

申请号：JP2010129556

申请日：2010-06-07

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： SCHOUMANS NICOLE ,  MOS EVERHARDUS CORNELIS ,  HEPP BIRGITT NOELLE CORNELIA LIDUINE ,  GROENENDIJK REMCO JOCHEM SEBASTIAAN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70616 ,  G03F7/705 ,  G03F7/70608

Abstract: PROBLEM TO BE SOLVED: To provide a method for obtaining information which is used when modeling lithography process, and to provide a lithography structure for executing the lithographic method.SOLUTION: The method of obtaining information to be used for modeling of lithography process is provided. A pattern feature can be formed to a target part of substrate by projecting a beam PB to the target part of the substrate. The lithographic process is featured for the target part with any one of a first property, showing change in a first direction along the front surface of substrate and a second property showing changes in a second direction, along the front surface of substrate or with both the first and second properties. The properties of the pattern feature are measured, and information to be used for modeling the process can be obtained, by using the property of measured pattern feature and at least either the first property or the second property of the lithography process. The lithographic process may be a projection of a beam to the front surface of substrate, or may include such a projection of beam.

Abstract translation: 要解决的问题：提供一种获取在光刻工艺建模时使用的信息的方法，并提供用于执行光刻方法的光刻结构。解决方案：提供获得用于光刻工艺建模的信息的方法。 可以通过将光束PB投射到基板的目标部分来形成到基板的目标部分的图案特征。 光刻工艺的特征在于具有第一特性中的任一个的目标部分，沿着基板的前表面显示沿第一方向的变化，以及沿着基板的前表面显示沿第二方向的变化的第二特性， 第一和第二属性。 测量图案特征的属性，并且可以通过使用测量图案特征的属性和光刻过程的至少第一属性或第二属性来获得用于建模过程的信息。 光刻工艺可以是将光束投射到衬底的前表面，或者可以包括这样的光束投影。

公开(公告)号：NL2004716A

公开(公告)日：2010-12-20

申请号：NL2004716

申请日：2010-05-12

Applicant: ASML NETHERLANDS BV

Inventor： SCHOUMANS NICOLE ,  MOS EVERHARDUS ,  HEPP BIRGITT ,  GROENENDIJK REMCO

IPC: G03F7/20

公开(公告)号：NL2009719A

公开(公告)日：2013-06-05

申请号：NL2009719

申请日：2012-10-29

Applicant: ASML NETHERLANDS BV

Inventor： WEI XIUHONG ,  BIJNEN FRANCISCUS ,  HAREN RICHARD ,  KERKHOF MARCUS ,  MOS EVERHARDUS ,  SIMONS HUBERTUS ,  EDART REMI ,  DECKERS DAVID ,  SCHOUMANS NICOLE ,  LYULINA IRINA

IPC: G03F7/20 ,  H01L21/68

公开(公告)号：NL2011276A

公开(公告)日：2014-03-10

申请号：NL2011276

申请日：2013-08-07

Applicant: ASML NETHERLANDS BV

Inventor： MOS EVERHARDUS ,  SIMONS HUBERTUS ,  BERGE PETER TEN ,  SCHOUMANS NICOLE ,  KUBIS MICHAEL ,  ABEN PAUL

IPC: G01N21/47 ,  G03F7/20

Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.