公开(公告)号：JP2003224067A

公开(公告)日：2003-08-08

申请号：JP2003006738

申请日：2003-01-15

Applicant: ASML NETHERLANDS BV

Inventor： HEERENS GERT-JAN ,  DONDERS SJOERD NICOLAAS L ,  SPANJERS FRANCISCUS ANDREAS CO ,  VAN MEER ASCHWIN LODEWIJK HEND ,  CASTENMILLER THOMAS JOSEPHUS M

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method and a device for cleaning a component of a lithographic apparatus in situ. SOLUTION: In a low-pressure environment, by applying a voltage between a tool tip in close proximity to a surface and that surface, contaminants on the surface are attracted and adhered to a tool. Also, a laser is used and each component of a lithographic projection apparatus is cleaned in situ. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2005354066A

公开(公告)日：2005-12-22

申请号：JP2005168398

申请日：2005-06-08

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： HEERENS GERT-JAN ,  BRUINSMA ANASTASIUS JACOBUS AN ,  KLINKHAMER JACOB FREDRIK FRISO ,  MARINUS VAN DE VEN BASTIAAN LA ,  VAN MIERLO HUBERT ADRIAAN

IPC: G03F9/00 ,  G01B11/00 ,  H01L21/027

CPC classification number: G03F9/7065 ,  G03F9/7076 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To provide an alignment marker and a method of alignment that enable inexpensive alignment of a reflective mask with respect to a supporting structure in order to cope with the difficulty in aligning the reflective mask and supporting structure thereof based on the reflectivity difference between an absorbing layer and reflective substrate through the use of long wavelength light in a lithography projection apparatus in which short wavelength radiation is to be used.
SOLUTION: The method of alignment of the present invention includes steps of: irradiating a alignment marker 5 having at least one height difference with a light beam 4 emitted from a light source 7 in an alignment sensor 1, the alignment marker 5 being provided on a mask MA side by side with a pattern 3 to be projected to a substrate W; processing reflected light coming from the alignment marker 5 by an imaging optical element 8 to receive a detector 9; and detecting the position of the height difference to use for alignment between the mask MA and supporting structure MT. Since the alignment marker 5 and pattern 3 can thereby be fabricated through the identical production process at the same time, a risk of an alignment failure between the both components can be reduced and the irradiation of the alignment marker 5 can be effected independently on the irradiation of the pattern 3 with an inexpensive light source 7, arranging the above alignment sensor 1 in a lithographic apparatus makes it possible to provide an alignment in situ.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种对准标记和对准方法，其能够使反射掩模相对于支撑结构便宜的对准，以便应对基于反射掩模和支撑结构的对准难度，基于 在使用短波长辐射的光刻投影装置中通过使用长波长的光吸收层和反射基板之间的反射率差。 解决方案：本发明的对准方法包括以下步骤：向对准传感器1照射与光源7发射的光束4具有至少一个高度差的对准标记5，对准标记5为 在掩模MA上并排设置有要投射到基板W的图案3; 通过成像光学元件8处理来自对准标记5的反射光，以接收检测器9; 并且检测用于掩模MA和支撑结构MT之间的对准的高度差的位置。 由于可以通过相同的制造方法同时制造对准标记5和图案3，所以可以降低两部件之间的取向失败的风险，并且可以在照射下独立地实现对准标记5的照射 具有便宜的光源7的图案3，将上述对准传感器1布置在光刻设备中使得可以原位提供对准。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005244193A

公开(公告)日：2005-09-08

申请号：JP2005013439

申请日：2005-01-21

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： HEERENS GERT-JAN ,  MARINUS VAN DE VEN BASTIAAN LA

IPC: G03B27/42 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F9/7096 ,  G03F7/70741 ,  G03F7/7075 ,  G03F7/70858 ,  G03F9/7011 ,  G03F9/7015

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus equipped with an alignment system which matches pattern grant equipment and/or a substrate by using a sensor and an actuator having a high price effect.
SOLUTION: The lithographic apparatus includes an illumination system which forms a beam of radiation, the pattern grant equipment which is supported by a support structure and gives a desired pattern to a cross section of the beam of radiation, a substrate holder which holds the substrate, a projection system which projects the patterned beam of radiation onto a target portion of the substrate, and a conditioned chamber. Furthermore, the apparatus includes an actuator 14 that introduces a reticle or the substrate into a conditioned chamber 20, and an alignment system 8 which matches the reticle or the substrate with the patterned and projected beam of radiation. The alignment system 8 is arranged outside the conditioned chamber 20.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种配备有通过使用具有高价格效应的传感器和致动器匹配图案授权设备和/或基板的对准系统的光刻设备。 解决方案：光刻设备包括形成辐射束的照明系统，图案授权设备由支撑结构支撑并且向辐射束的横截面提供期望的图案，保持 基板，将图案化的辐射束投影到基板的目标部分上的投影系统和调节室。 此外，该设备包括将掩模版或基板引入调节室20的致动器14以及与掩模版或基板与图案化和投射的辐射束匹配的对准系统8。 对准系统8布置在调节室20的外部。版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005045253A

公开(公告)日：2005-02-17

申请号：JP2004212414

申请日：2004-07-21

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： VAN DE VEN BASTIAAN LAMBERTUS ,  HEERENS GERT-JAN ,  LANSBERGEN ROBERT GABRIEL M ,  LEENDERS MARTINUS HENDRIKUS AN ,  LOOPSTRA ERIK ROELOF

IPC: G03F7/20 ,  H01L21/00 ,  H01L21/027

CPC classification number: G03F7/709 ,  G03F7/707 ,  G03F7/70716 ,  G03F7/70741 ,  G03F7/70783 ,  G03F7/70825

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic system that improves the accuracy of images projected upon a substrate and, at the same time, is shortened in idling time. SOLUTION: The lithographic system is provided with a coupling system which positions a patterning means with respect to a reticle stage. The projecting system of the lithographic system has an operation cycle containing a projecting phase in which a patterned beam is projected upon the target portion of a substrate. The reticle stage supports the patterning means and an exchanging phase in which the patterning means is exchanged with another patterning means. The coupling system positions the exchanged patterning means with respect to the reticle stage. Since the coupling system is separated from the patterning means during the projecting phase, more accurate projected images can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种提高投影在基板上的图像的精度的光刻系统，同时在空转时间上缩短。 解决方案：光刻系统设有耦合系统，其将图案化装置相对于掩模版台定位。 光刻系统的投影系统具有包含投影相位的操作周期，其中图案化的光束投影到基板的目标部分上。 刻线台支撑图形装置和交换阶段，其中图形装置与另一图案形成装置交换。 耦合系统将交换的图案形成装置相对于标线片台定位。 由于耦合系统在投影阶段与图案化装置分离，所以可以获得更准确的投影图像。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004214658A

公开(公告)日：2004-07-29

申请号：JP2003429098

申请日：2003-12-25

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： HEERENS GERT-JAN

IPC: B65D85/38 ,  B65G49/06 ,  G03F1/66 ,  G03F7/20 ,  H01L21/027 ,  H01L21/673 ,  H01L21/677 ,  G03F1/14 ,  H01L21/68

CPC classification number: G03F1/66 ,  G03F7/707 ,  G03F7/70741 ,  G03F7/70808 ,  G03F7/70916 ,  G03F7/70983

Abstract: PROBLEM TO BE SOLVED: To provide a storage and transferring device that protects a mask from being contaminated even in a scanning process.
SOLUTION: The mask container is at least partially semitransparent to at least a radiation with a specified wavelength, and is so formed that it can obtain an image of a mask MA from the outside of the container 70 by using light with a specified wavelength. The semitransparent part of the container 70 is made of at least one material out of glass and plexiglas. This makes it possible to scan the mask MA through the container 70.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2008022034A

公开(公告)日：2008-01-31

申请号：JP2007254085

申请日：2007-09-28

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： VAN DE VEN BASTIAAN LAMBERTUS ,  HEERENS GERT-JAN ,  LANSBERGEN ROBERT GABRIEL M ,  LEENDERS MARTINUS HENDRIKUS AN ,  LOOPSTRA ERIK ROELOF

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/00

CPC classification number: G03F7/709 ,  G03F7/707 ,  G03F7/70716 ,  G03F7/70741 ,  G03F7/70783 ,  G03F7/70825

Abstract: PROBLEM TO BE SOLVED: To provide a lithography system which improves precision of an image projected on a substrate and reduces an idle time. SOLUTION: According to a viewpoint of the invention, a lithographic apparatus has a coupling system for positioning a patterning means with respect to a reticle stage. A projection system of a lithographic projection apparatus has an operation cycle including a projection phase in which a patterned beam is projected onto a target portion of the substrate and the reticle stage supports a patterning means, and an exchange phase in which the patterning means is exchanged and the coupling system positions the patterning means with respect to the reticle stage. The lithographic apparatus has an advantage that the coupling system is apart from the patterning means during the projection phase, so as to obtain the projection image with high accuracy. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种提高投射在基板上的图像的精度并减少空闲时间的光刻系统。 解决方案：根据本发明的观点，光刻设备具有用于相对于标线片台定位图案化装置的耦合系统。 光刻投影装置的投影系统具有操作周期，该操作周期包括投影阶段，其中图案化的光束投影到基板的目标部分上，并且标线片台支撑图案形成装置，以及交换阶段，其中图案形成装置被更换 并且联接系统相对于标线片台定位图案形成装置。 光刻设备具有在投影阶段期间耦合系统与图案化装置分离的优点，以便以高准确度获得投影图像。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006179908A

公开(公告)日：2006-07-06

申请号：JP2005364267

申请日：2005-12-19

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： MOORS JOHANNES HUBERTUS J ,  HAM ERIK LEONARDUS ,  HEERENS GERT-JAN ,  LIEBREGTS PAULUS MARTINUS MARI ,  LOOPSTRA ERIK ROELOF ,  WERIJ HENRI GERARD C

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70933 ,  G03F7/70908

Abstract: PROBLEM TO BE SOLVED: To reduce stain particles of a surface, when the surface of a reticle or a mask is exposed to the air of the optics compartment of a lithographic apparatus. SOLUTION: The lithographic apparatus includes an optics compartment that contains the patterned surface of a patterning device and an optical element, and a substrate compartment connected to the optics compartment by a connection that is arranged to pass a patterned beam of radiation from the optical element to a substrate. The apparatus also includes a first flush gas inlet arranged to supply a first flush gas into the connection; a second flush gas inlet adjacent to the patterned surface and arranged to supply a second flush gas into the optics compartment, and to create a region adjacent to the patterned surface in which the second flush gas flows in a direction with a component normal to and away from the patterned surface, and a gas pump arranged to pump the flush gases from the optics compartment. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：当掩模版或掩模的表面暴露于光刻设备的光学隔室的空气时，为了减少表面的污渍颗粒。 解决方案：光刻设备包括光学隔室，其包含图案形成装置和光学元件的图案化表面，以及通过连接器连接到光学隔室的衬底隔间，该连接被布置成将图案化的辐射束从 光学元件。 该设备还包括第一冲洗气体入口，布置成将第一冲洗气体供应到连接中; 邻近所述图案化表面的第二冲洗气体入口并且布置成将第二冲洗气体供应到所述光学隔室中，并且产生与所述图案化表面相邻的区域，在所述区域中所述第二冲洗气体沿着与正常和远离的部件的方向一起流动 并且布置成泵送来自光学隔室的冲洗气体的气泵。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006165579A

公开(公告)日：2006-06-22

申请号：JP2005354268

申请日：2005-12-08

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： JOSEPHINA MOORS JOHANNES HUBER ,  ROBERTUS NICODEMUS JACOBUS VAN ,  VADIM YEVGENYEVICH BANINE ,  HEERENS GERT-JAN ,  ELISABETH HEUTS FREDERIK THEOD ,  JACOBS JOHANNES HENRICUS WILHE ,  LIEBREGTS PAULUS MARTINUS MARI ,  NEERHOF HENDRIK ANTONY JOHANNE

IPC: H01L21/027

CPC classification number: G03F7/70916 ,  G03F7/70883 ,  G03F7/70908

Abstract: PROBLEM TO BE SOLVED: To provide a method for reducing the amount of contaminants that may flow to the optics compartment as much as possible in a lithographic projection apparatus.
SOLUTION: A device manufacturing method includes projecting a patterned beam of radiation through an optics compartment and a channel that provides an open connection between the optics compartment and a substrate compartment onto a substrate, maintaining an ionized flush gas at a higher pressure in the channel than in the substrate compartment and in the optics compartment during the projecting, intercepting particles that emanate from the substrate with the ionized flush gas, pumping the flush gas carrying the intercepted particles from the substrate compartment using a pump coupled to a gas outlet of the substrate compartment coupled to at least one of the compartments, and establishing an electrical potential difference between a wall of the channel and the outlet and/or a rotor of the pump so that the outlet and/or the rotor of the pump attracts positively charged ions that stem from the ionized flush gas in the channel.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种在光刻投影设备中尽可能多地减少可能流到光学隔室的污染物的量的方法。 解决方案：一种器件制造方法包括将图案化的辐射束投射通过光学隔室和通道，其在光学隔室和衬底隔室之间提供开放连接到衬底上，将电离冲洗气体保持在较高压力 在通过电离冲洗气体从基板突出的截断颗粒的过程中，通道比衬底隔室和光学隔室中的通道使​​用连接到基板隔室的气体出口的泵来泵送从基板室运送被拦截的颗粒的冲洗气体 所述衬底隔室联接到所述隔室中的至少一个，并且在所述通道的壁与所述泵的出口和/或转子之间建立电势差，使得所述泵的出口和/或转子吸引带正电 源自通道中的电离冲洗气体的离子。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006041499A

公开(公告)日：2006-02-09

申请号：JP2005183273

申请日：2005-06-23

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： HAM ERIK LEONARDUS ,  HEERENS GERT-JAN ,  LANSBERGEN ROBERT GABRIEL M ,  MEIJER ELLARD A ,  MEIJER HENDRICUS JOHANNES MARI ,  MEILING HANS ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH

IPC: H01L21/027 ,  B65G49/00 ,  G03B27/52 ,  G03B27/62 ,  G03F7/20 ,  H01L21/677

CPC classification number: G03B27/52 ,  G03F7/70741

Abstract: PROBLEM TO BE SOLVED: To provide a box which is capable of protecting a lithography patterning device against external contaminants and making its throughput optimal.
SOLUTION: The transfer box 2 is equipped with an internal space 10 provided with a housing position at which the patterning device is housed and a container 8 provided with an opening used for transferring the patterning device. The internal space 10 is pressurized before the patterning device is transferred from the internal space 10 to a lithography apparatus. The box is equipped with a closure which closes the opening and/or a channel system 18 which discharges gas from the internal space 10 of the box to / and/or supplies the gas from / to the internal space of the box, and the lithography apparatus which is so constituted as to collaborate with the box device is included.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够保护光刻图案形成装置免受外部污染物并使其吞吐量最优化的盒子。 解决方案：转印盒2配备有内部空间10，内部空间10设置有容纳图案形成装置的容纳位置，容器8具有用于转印图案形成装置的开口。 在图案形成装置从内部空间10传送到光刻装置之前，内部空间10被加压。 该箱子装有封闭开口和/或通道系统18，该通道系统18将来自箱体的内部空间10的气体从盒子的内部空间排出和/或从气体的内部空间供应气体，并且光刻 包括与盒装置协作的装置。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2009278126A

公开(公告)日：2009-11-26

申请号：JP2009186649

申请日：2009-08-11

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： HEERENS GERT-JAN ,  BRUINSMA ANASTASIUS JACOBUS AN ,  KLINKHAMER JACOB FREDRIK FRISO ,  MARINUS VAN DE VEN BASTIAAN LA ,  VAN MIERLO HUBERT ADRIAAN

IPC: G03F9/00 ,  H01L21/027 ,  G01B11/00

CPC classification number: G03F9/7065 ,  G03F9/7076 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To provide an alignment marker and an alignment method that allow inexpensive alignment of a reflective mask with a support structure thereof in order to cope with difficulty in executing the alignment of the reflective mask with the support structure thereof on the basis of the reflectivity difference between an absorbing layer and a reflective substrate by using long-wavelength light in a lithography projection apparatus using short-wavelength radiation.
SOLUTION: The alignment method includes a step in which an alignment marker 5, provided on a mask MA and juxtaposed with a pattern 3 to be projected on a substrate W while having a height difference, is irradiated with a light beam 4 emitted from a light source 7 in an alignment sensor 1, its reflected light is processed by an imaging optical element 8 and received by a detector 9, and the position of the height difference is detected so as to use it for alignment between the mask MA and a support MT. Therefore, the alignment marker 5 and the pattern 3 can be simultaneously manufactured in the same manufacturing process, a risk of poor alignment between both can be reduced, and lighting of the alignment marker 5 can be executed independently of lighting of the pattern 3 with an inexpensive light source 7, thereby achieving alignment in situ by providing the alignment sensor 1 in a lithographic apparatus.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种对准标记和对准方法，其允许反光掩模与其支撑结构的便宜对准，以便应对难以执行其支撑结构的反射掩模的对准 在使用短波长辐射的光刻投影装置中通过使用长波长光来吸收层和反射基板之间的反射率差的基础。 解决方案：对准方法包括一个步骤，其中设置在掩模MA上并与投影在基板W上的图案3同时具有高差的对准标记5被照射到发射的光束4 来自对准传感器1的光源7，其反射光被成像光学元件8处理并由检测器9接收，并且检测高度差的位置，以便将其用于掩模MA和 支持MT。 因此，可以在相同的制造工艺中同时制造对准标记5和图案3，可以降低两者之间的对准不良的风险，并且可以独立于图案3的点亮来执行对准标记5的点亮 廉价的光源7，从而通过在光刻设备中提供对准传感器1来实现对准。 版权所有（C）2010，JPO＆INPIT