公开(公告)号：KR20070092155A

公开(公告)日：2007-09-12

申请号：KR20070022433

申请日：2007-03-07

Applicant: ASML NETHERLANDS BV

Inventor： LALBAHADOERSING SANJAYSINGH ,  MUSA SAMI

IPC: H01L21/027

CPC classification number: H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/3105 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2223/54426 ,  H01L2924/00

Abstract: A method and a system for enhancing lithographic alignment are provided to obtain an improved alignment system and an improved method of a lithography system. A substrate preparing process is performed to prepare a lower alignment mark structure for defining a lower trench region on a substrate(411). An applying process is performed to apply a hard mask coating having a top surface on the substrate. An exposing process is performed to expose parts of the hard mask coating to a dose of radiation in order to raise a top surface region of the hard mask coating located on the lower trench region in the lower alignment mark structure. As a result, the top surface region is higher than parts of the top surface adjacent to the top surface region of the hard mask coating. The hard mask coating is formed of amorphous carbon.

Abstract translation: 提供了一种用于增强光刻对准的方法和系统，以获得改进的对准系统和光刻系统的改进方法。 进行衬底制备工艺以制备用于限定衬底（411）上的下沟槽区域的下部对准标记结构。 执行施加工艺以在基底上施加具有顶表面的硬掩模涂层。 进行曝光处理以将硬掩模涂层的一部分暴露于一定量的辐射，以便提高位于下对准标记结构中的下沟槽区上的硬掩模涂层的顶表面区域。 结果，顶表面区域高于与硬掩模涂层的顶表面区域相邻的顶表面的部分。 硬掩模涂层由无定形碳形成。

公开(公告)号：KR20070092130A

公开(公告)日：2007-09-12

申请号：KR20070022072

申请日：2007-03-06

Applicant: ASML NETHERLANDS BV

Inventor： LALBAHADOERSING SANJAY ,  MUSA SAMI

IPC: H01L21/027

CPC classification number: G03F7/70466 ,  G03F7/70025

Abstract: A method and a system for enhanced lithographic patterning are provided to print a pattern having a feature interval less than a printable minimum interval within a hard mask by using a single exposure method. A patterned radiation beam is applied to a hard mask layer provided on a substrate. First parts of the hard mask layer are exposed by using a first dose of radiation necessary for enhancing etch characteristics of the first parts from the patterned radiation beam. Second parts different from the first parts of the hard mask layer are exposed by using a second dose of radiation necessary for enhancing etch characteristics of the second parts from the patterned radiation beam. An etch process for the hard mask layer is performed. The first parts and the second parts are removed. Parts of the hard mask layer except the first and second parts are not damaged.

Abstract translation: 提供了用于增强平版印刷图案的方法和系统，以通过使用单一曝光方法来打印具有小于硬掩模内的可打印最小间隔的特征间隔的图案。 将图案化的辐射束施加到设置在基板上的硬掩模层。 通过使用用于从图案化的辐射束增强第一部分的蚀刻特性所需的第一剂量的辐射来暴露硬掩模层的第一部分。 与硬掩模层的第一部分不同的第二部分通过使用从图案化的辐射束增强第二部分的蚀刻特性所需的第二剂量的辐射来暴露。 执行用于硬掩模层的蚀刻工艺。 第一部分和第二部分被去除。 除了第一和第二部分之外的硬掩模层的部分不被损坏。

公开(公告)号：JP2009147328A

公开(公告)日：2009-07-02

申请号：JP2008309352

申请日：2008-12-04

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： MUSA SAMI ,  FRANCISCUS VAN HAREN RICHARD J ,  LALBAHADOERSING SANJAY ,  XIUHONG WEI

IPC: H01L21/027 ,  G01B11/00 ,  G03F7/20

CPC classification number: G03F9/7076

Abstract: PROBLEM TO BE SOLVED: To provide a product with an alignment mark that enables spatially varying reflective properties by using a pattern of fine lines for different polarization components for radiation of selectable orders of diffraction. SOLUTION: The position of a product is measured by using an alignment mark on the product. Radiation is transmitted toward the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark includes a set of mutually parallel conductor tracks from which the diffracted radiation is collected, and the pattern is determined by a pattern in which the pitch between successive tracks is varied as a function of position along the surface of the product. Thus, for example, the pattern includes alternating first and second areas having a first pitch value and a second pitch value respectively. Because the tracks in different parts of the pattern, such as the first and second areas, are parallel to each other, improved measurements are possible. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有对准标记的产品，其通过使用用于不同偏振分量的细线图案来实现空间变化的反射特性，用于可选择的衍射级数的辐射。

解决方案：产品的位置通过使用产品上的对准标记来测量。 辐射朝向对准标记传播并被对准标记中的图案衍射。 位置信息由衍射辐射的相位关系确定。 对准标记包括一组相互平行的导体轨道，衍射辐射从该导体轨道收集，并且该图案由其中连续迹线之间的间距作为沿着产品表面的位置的函数而变化的图案确定。 因此，例如，该图案分别包括具有第一间距值和第二间距值的交替的第一和第二区域。 由于图案的不同部分中的轨迹（例如第一和第二区域）彼此平行，因此可以进行改进的测量。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006339647A

公开(公告)日：2006-12-14

申请号：JP2006150762

申请日：2006-05-31

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： FRANCISCUS VAN HAREN RICHARD J ,  MUSA SAMI

IPC: H01L21/027 ,  G03F9/00

CPC classification number: H01L23/544 ,  G03F9/7076 ,  H01L2924/0002 ,  Y10S977/773 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a mark for positioning capable of reducing the space of a scribe lane and of utilizing the space of a substrate more efficiently.
SOLUTION: The mark for positioning to be used for the substrate consists of the periodic 2-dimensional array of a structure. The spacing of the structure is smaller than an alignment beam, but is larger than an exposure beam.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供能够更有效地减少划线的空间和利用基板的空间的定位标记。 解决方案：用于基板的定位标记由结构的周期性二维阵列组成。 结构的间距小于对准光束，但大于曝光光束。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2012146959A

公开(公告)日：2012-08-02

申请号：JP2011255747

申请日：2011-11-24

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DAVID DECKERS ,  BIJNEN FRANCISCUS GODEFRIDUS CASPER ,  MUSA SAMI

IPC: H01L21/027 ,  H01L21/66

CPC classification number: G03F7/70683 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To provide a metrological method capable of measuring particularly CD and overlay among a number of parameters by using a sensor of a type normally used for position measurements in a lithographic apparatus itself.SOLUTION: A pattern includes first and second sub-patterns 312 and 316, mutually adjacently positioned on a substrate, and having a first and a second periodicity respectively. The pattern is observed and a combined signal is obtained, which contains a beat component having a third periodicity at a frequency lower than frequencies of the first and the second periodicity. A measured value of lithographic process performance is obtained by referring to a phase of the beat component. The measurement can be carried out by using an existing alignment sensor of a lithographic apparatus. Sensitivity and accuracy of the measurement can be adjusted by selection of the first and the second periodicity, and therefore the third periodicity.

Abstract translation: 要解决的问题：提供一种能够通过使用通常用于光刻设备本身中的位置测量的类型的传感器来特别地测量多个参数中的CD并覆盖的计量方法。 解决方案：图案包括彼此相邻地定位在基板上并且分别具有第一和第二周期性的第一和第二子图案312和316。 观察图案，并且获得组合信号，其包含具有低于第一和第二周期的频率的频率的具有第三周期性的拍子分量。 通过参考拍子分量的相位来获得光刻处理性能的测量值。 可以通过使用光刻设备的现有对准传感器来进行测量。 测量的灵敏度和精度可以通过选择第一和第二周期来调节，因此可以通过第三周期性来调整。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011238919A

公开(公告)日：2011-11-24

申请号：JP2011099037

申请日：2011-04-27

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LEE CHUN SUN ,  FRANCISCUS VAN HAREN RICHARD JOHANNES ,  MUSA SAMI ,  DAVID DECKERS ,  WOO SHUNGDA

IPC: H01L21/027 ,  G03F9/00

CPC classification number: G03B21/26 ,  G03B27/42 ,  G03B27/54 ,  G03B27/58 ,  G03F9/708

Abstract: PROBLEM TO BE SOLVED: To produce an alignment that has a good alignment capability.SOLUTION: A method of production of alignment marks uses a self-aligned double patterning process. An alignment mark pattern is provided with first and second sub-segmented elements. After selecting a dipolar illumination orientation, dipole-X is used to illuminate a pattern and to image first elements on a wafer, but not second elements. Alternatively, dipole-Y is used to illuminate the pattern and to image the second elements on the wafer, but not the first elements. In either case, self-aligned double patterning processing may then be performed to produce product-like alignment marks with high contrast and wafer quality (WQ). Subsequently the X and Y alignment marks thus produced are used for the step of alignment in a lithographic process.

Abstract translation: 要解决的问题：产生具有良好对准能力的对准。 解决方案：生产对准标记的方法使用自对准双重图案化工艺。 对准标记图案设置有第一和第二子分段元件。 在选择偶极照明方向之后，使用偶极子-X来照射图案并对晶片上的第一元件进行成像，而不是第二元件。 或者，使用偶极子Y来照亮图案并对晶片上的第二元件进行成像，而不是第一元件。 在任一情况下，可以执行自对准双图案处理以产生具有高对比度和晶片质量（WQ）的类似产品的对准标记。 随后，由此产生的X和Y对准标记用于光刻工艺中的对准步骤。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2007300076A

公开(公告)日：2007-11-15

申请号：JP2007072461

申请日：2007-03-20

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： MUSA SAMI ,  VAN HAREN RICHARD JOHANNES FRA ,  SCHAAR MAURITS VAN DER

IPC: H01L21/027 ,  G01B11/00 ,  G03F9/00 ,  H01L21/68

CPC classification number: G03F9/7049 ,  G03F9/7015 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To provide a firmer, simpler and cheaper method for deflecting a diffracted alignment beam. SOLUTION: An alignment tool illuminates an alignment mark P1 on a substrate W with an alignment beam, and measures a reflection spectrum. The reflection spectrum is compared with reference marks G91, G93, and G96 to determine presence or absence of a misalignment. A brazed sub-wavelength grating 10 is used to deflect sub-beams created by diffracting the alignment beam from the alignment mark P1 onto the reference marks G91, G93, and G96. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供用于偏转衍射对准光束的更坚实，更简单和更便宜的方法。 解决方案：对准工具用对准光照射衬底W上的对准标记P1，并测量反射光谱。 将反射光谱与参考标记G91，G93和G96进行比较，以确定是否存在未对准。 钎焊的亚波长光栅10用于将通过将对准光束从对准标记P1衍射衍射而产生的子光束偏转到参考标记G91，G93和G96上。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2011199282A

公开(公告)日：2011-10-06

申请号：JP2011052317

申请日：2011-03-10

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DAVID DECKERS ,  MUSA SAMI

IPC: H01L21/027 ,  G03F9/00

CPC classification number: G03F1/42 ,  G03F1/70 ,  G03F7/70633 ,  G03F7/70683

Abstract: PROBLEM TO BE SOLVED: To form an alignment mark that can be used for determining multiple exposure alignment.SOLUTION: The alignment mark includes: a first alignment pattern 2 that is projected during a first exposure; a second alignment pattern 4 that is projected during a second exposure; a first sub-mark at least partially defined by a first alignment pattern; and a second sub-mark that is at least partially defined by a second alignment pattern. The relative position between an image line of the first alignment pattern of at least one of sub-marks 7, 8, and an image line of the second alignment pattern, shows the alignment between the first exposure and second exposure at a microlevel.

Abstract translation: 要解决的问题：形成可用于确定多次曝光对准的对准标记。解决方案：对准标记包括：在第一曝光期间投影的第一对准图案2; 在第二曝光期间投影的第二对准图案4; 至少部分地由第一对准图案限定的第一子标记; 以及至少部分地由第二对准图案限定的第二子标记。 子标记7,8中的至少一个的第一对准图案的图像线与第二对准图案的图像线之间的相对位置示出了第一曝光和第二次曝光之间的对准。

公开(公告)号：JP2007266594A

公开(公告)日：2007-10-11

申请号：JP2007048814

申请日：2007-02-28

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LALBAHADOERSING SANJAY ,  MUSA SAMI

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70466

Abstract: PROBLEM TO BE SOLVED: To provide a plurality of features provided by a single exposing process and characterized by an about half interval to a hard mask using a single hard mask etching process and without a photoresist treatment for defining the hard mask. SOLUTION: This system and process is a double patterning system and process using a carbon-based hard mask. This double patterning system provides a means for forming a hard mask feature with a feature interval less than a minimum interval with which the hard mask can be printed according to a single exposure, by of a single hard mask etching process. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供通过单个曝光工艺提供的多个特征，并且使用单个硬掩模蚀刻工艺并且没有用于限定硬掩模的光致抗蚀剂处理，其特征在于对于硬掩模的约一半的间隔。 解决方案：该系统和工艺是使用碳基硬掩模的双重图案化系统和工艺。 该双重图案化系统提供了通过单个硬掩模蚀刻工艺形成具有小于最小间隔的特征间隔的硬掩模特征的装置，通过单个曝光可以通过单个曝光来印刷硬掩模。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007142419A

公开(公告)日：2007-06-07

申请号：JP2006308751

申请日：2006-11-15

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： VAN HAREN RICHARD JOHANNES FRA ,  MUSA SAMI

IPC: H01L21/027 ,  G03F9/00

CPC classification number: G03F9/7049 ,  G03F9/7076 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To apply a two-dimensional photonic crystal to an alignment device.
SOLUTION: An alignment mark for use on a substrate has a structure of a periodical two-dimensional array. An interval between lines of the array of the structure is smaller than the size of an alignment radiation beam, but larger than an exposure beam, and width of the lines is sinusoidally changed from one end to the other end of the array.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：将二维光子晶体应用于对准装置。 解决方案：用于衬底的对准标记具有周期性二维阵列的结构。 结构的阵列的线之间的间隔小于对准辐射束的尺寸，但大于曝光光束，并且线的宽度从阵列的一端正弦变化。 版权所有（C）2007，JPO＆INPIT