中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.026 seconds)

    METHOD AND SYSTEM FOR ENHANCED LITHOGRAPHIC PATTERNING
    1.
    发明公开
    METHOD AND SYSTEM FOR ENHANCED LITHOGRAPHIC PATTERNING 审中-公开
    用于增强平台的方法和系统

    公开(公告)号：KR20070092130A

    公开(公告)日：2007-09-12

    申请号：KR20070022072

    申请日：2007-03-06

    Applicant: ASML NETHERLANDS BV

    Inventor： LALBAHADOERSING SANJAY ,  MUSA SAMI

    IPC: H01L21/027

    CPC classification number: G03F7/70466 ,  G03F7/70025

    Abstract: A method and a system for enhanced lithographic patterning are provided to print a pattern having a feature interval less than a printable minimum interval within a hard mask by using a single exposure method. A patterned radiation beam is applied to a hard mask layer provided on a substrate. First parts of the hard mask layer are exposed by using a first dose of radiation necessary for enhancing etch characteristics of the first parts from the patterned radiation beam. Second parts different from the first parts of the hard mask layer are exposed by using a second dose of radiation necessary for enhancing etch characteristics of the second parts from the patterned radiation beam. An etch process for the hard mask layer is performed. The first parts and the second parts are removed. Parts of the hard mask layer except the first and second parts are not damaged.

    Abstract translation: 提供了用于增强平版印刷图案的方法和系统，以通过使用单一曝光方法来打印具有小于硬掩模内的可打印最小间隔的特征间隔的图案。 将图案化的辐射束施加到设置在基板上的硬掩模层。 通过使用用于从图案化的辐射束增强第一部分的蚀刻特性所需的第一剂量的辐射来暴露硬掩模层的第一部分。 与硬掩模层的第一部分不同的第二部分通过使用从图案化的辐射束增强第二部分的蚀刻特性所需的第二剂量的辐射来暴露。 执行用于硬掩模层的蚀刻工艺。 第一部分和第二部分被去除。 除了第一和第二部分之外的硬掩模层的部分不被损坏。

    Enhanced lithography patterning process and system
    2.
    发明专利
    Enhanced lithography patterning process and system 有权
    增强雕刻方法和系统

    公开(公告)号：JP2007266594A

    公开(公告)日：2007-10-11

    申请号：JP2007048814

    申请日：2007-02-28

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： LALBAHADOERSING SANJAY ,  MUSA SAMI

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70466

    Abstract: PROBLEM TO BE SOLVED: To provide a plurality of features provided by a single exposing process and characterized by an about half interval to a hard mask using a single hard mask etching process and without a photoresist treatment for defining the hard mask. SOLUTION: This system and process is a double patterning system and process using a carbon-based hard mask. This double patterning system provides a means for forming a hard mask feature with a feature interval less than a minimum interval with which the hard mask can be printed according to a single exposure, by of a single hard mask etching process. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供通过单个曝光工艺提供的多个特征，并且使用单个硬掩模蚀刻工艺并且没有用于限定硬掩模的光致抗蚀剂处理，其特征在于对于硬掩模的约一半的间隔。 解决方案：该系统和工艺是使用碳基硬掩模的双重图案化系统和工艺。 该双重图案化系统提供了通过单个硬掩模蚀刻工艺形成具有小于最小间隔的特征间隔的硬掩模特征的装置，通过单个曝光可以通过单个曝光来印刷硬掩模。 版权所有（C）2008，JPO＆INPIT

    Alignment method, alignment system, and product with alignment mark
    3.
    发明专利
    Alignment method, alignment system, and product with alignment mark 有权
    对准方法，对准系统和具有对准标记的产品

    公开(公告)号：JP2009147328A

    公开(公告)日：2009-07-02

    申请号：JP2008309352

    申请日：2008-12-04

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： MUSA SAMI ,  FRANCISCUS VAN HAREN RICHARD J ,  LALBAHADOERSING SANJAY ,  XIUHONG WEI

    IPC: H01L21/027 ,  G01B11/00 ,  G03F7/20

    CPC classification number: G03F9/7076

    Abstract: PROBLEM TO BE SOLVED: To provide a product with an alignment mark that enables spatially varying reflective properties by using a pattern of fine lines for different polarization components for radiation of selectable orders of diffraction. SOLUTION: The position of a product is measured by using an alignment mark on the product. Radiation is transmitted toward the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark includes a set of mutually parallel conductor tracks from which the diffracted radiation is collected, and the pattern is determined by a pattern in which the pitch between successive tracks is varied as a function of position along the surface of the product. Thus, for example, the pattern includes alternating first and second areas having a first pitch value and a second pitch value respectively. Because the tracks in different parts of the pattern, such as the first and second areas, are parallel to each other, improved measurements are possible. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供具有对准标记的产品，其通过使用用于不同偏振分量的细线图案来实现空间变化的反射特性，用于可选择的衍射级数的辐射。

    解决方案：产品的位置通过使用产品上的对准标记来测量。 辐射朝向对准标记传播并被对准标记中的图案衍射。 位置信息由衍射辐射的相位关系确定。 对准标记包括一组相互平行的导体轨道，衍射辐射从该导体轨道收集，并且该图案由其中连续迹线之间的间距作为沿着产品表面的位置的函数而变化的图案确定。 因此，例如，该图案分别包括具有第一间距值和第二间距值的交替的第一和第二区域。 由于图案的不同部分中的轨迹（例如第一和第二区域）彼此平行，因此可以进行改进的测量。 版权所有（C）2009，JPO＆INPIT

    Lithographic apparatus
    6.
    发明专利
    Lithographic apparatus 有权
    LITHOGRAPHIC设备

    公开(公告)号：JP2010004040A

    公开(公告)日：2010-01-07

    申请号：JP2009140853

    申请日：2009-06-12

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： VITALLY PROSYENTSOV ,  LALBAHADOERSING SANJAY ,  MUSA SAMI ,  LEE HYUN-WOO

    IPC: H01L21/027

    CPC classification number: G03B27/52 ,  G03F7/70341 ,  G03F7/707 ,  G03F7/7085

    Abstract: PROBLEM TO BE SOLVED: To provide an improved lithographic apparatus in which at least one of the disadvantages in the conventional techniques has been removed or alleviated.
    SOLUTION: A substrate stage of an immersion-type lithographic apparatus configured to project a patterned radiation beam from a patterning device onto a substrate is provided to hold the substrate and comprises at least one sensor for sensing the patterned radiation beam. The sensor includes, at least a partially transmissive layer having a front surface facing the incoming radiation beam and a back surface opposite to the front surface, and the back surface is provided with at least one sensor mark to be exposed to the radiation beam passing through the transmissive layer.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种改进的光刻设备，其中传统技术中的至少一个缺点已被消除或减轻。 解决方案：设置浸没式光刻设备的衬底台，其被配置为将图案化的辐射束从图案形成装置投影到衬底上以保持衬底并且包括用于感测图案化的辐射束的至少一个传感器。 传感器包括至少一个具有面向入射辐射束的前表面和与前表面相对的后表面的部分透射层，并且背表面设置有至少一个传感器标记，以暴露于通过的辐射束 透射层。 版权所有（C）2010，JPO＆INPIT

    Sub-segmented alignment mark arrangement
    7.
    发明专利
    Sub-segmented alignment mark arrangement 有权
    分标签对齐标记安排

    公开(公告)号：JP2009302534A

    公开(公告)日：2009-12-24

    申请号：JP2009135670

    申请日：2009-06-05

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： MUSA SAMI ,  FRANCISCUS VAN HAREN RICHARD J ,  LALBAHADOERSING SANJAY

    IPC: H01L21/027

    CPC classification number: G03B27/54 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/54466 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide an arrangement of an alignment mark that has improved compatibility with extreme dipolar illumination settings and also with less extreme settings to be used in the other patterning step during lithography processing.
    SOLUTION: An alignment mark on a substrate includes a periodic arrangement of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic arrangement is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-arrangement with a first sub-pitch and each second element has a second periodic sub-arrangement with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength λ is different from the optical property of the second element. The overall pitch is larger than the wavelength λ, and each of the first and the second sub-pitch is smaller than the wavelength.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种对准标记的布置，其具有改进的与极性偶极照明设置的兼容性，并且还提供在光刻处理期间在另一图案化步骤中使用的较不极端的设置。 解决方案：衬底上的对准标记包括多个第一元件和多个第二元件的周期性布置。 元件沿第一方向以交替的重复序列排列。 周期性布置的整体间距等于第一元件的宽度和第一元件在第一方向上的宽度之和。 每个第一元件具有具有第一子间距的第一周期性子布置，并且每个第二元件具有带有第二子间距的第二周期性子布置。 用于与具有波长λ的辐射束相互作用的第一元件的光学性质不同于第二元件的光学性质。 总间距大于波长λ，第一和第二子间距都小于波长。 版权所有（C）2010，JPO＆INPIT

Patent Agency Ranking