公开(公告)号：KR20070092155A

公开(公告)日：2007-09-12

申请号：KR20070022433

申请日：2007-03-07

Applicant: ASML NETHERLANDS BV

Inventor： LALBAHADOERSING SANJAYSINGH ,  MUSA SAMI

IPC: H01L21/027

CPC classification number: H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/3105 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2223/54426 ,  H01L2924/00

Abstract: A method and a system for enhancing lithographic alignment are provided to obtain an improved alignment system and an improved method of a lithography system. A substrate preparing process is performed to prepare a lower alignment mark structure for defining a lower trench region on a substrate(411). An applying process is performed to apply a hard mask coating having a top surface on the substrate. An exposing process is performed to expose parts of the hard mask coating to a dose of radiation in order to raise a top surface region of the hard mask coating located on the lower trench region in the lower alignment mark structure. As a result, the top surface region is higher than parts of the top surface adjacent to the top surface region of the hard mask coating. The hard mask coating is formed of amorphous carbon.

Abstract translation: 提供了一种用于增强光刻对准的方法和系统，以获得改进的对准系统和光刻系统的改进方法。 进行衬底制备工艺以制备用于限定衬底（411）上的下沟槽区域的下部对准标记结构。 执行施加工艺以在基底上施加具有顶表面的硬掩模涂层。 进行曝光处理以将硬掩模涂层的一部分暴露于一定量的辐射，以便提高位于下对准标记结构中的下沟槽区上的硬掩模涂层的顶表面区域。 结果，顶表面区域高于与硬掩模涂层的顶表面区域相邻的顶表面的部分。 硬掩模涂层由无定形碳形成。

公开(公告)号：KR20180021140A

公开(公告)日：2018-02-28

申请号：KR20187002405

申请日：2016-06-27

Applicant: ASML NETHERLANDS BV

Inventor： ABEN PAUL CORNELIS HUBERTUS ,  LALBAHADOERSING SANJAYSINGH ,  SCHOONUS JURGEN JOHANNES HENDERIKUS MARIA ,  DECKERS DAVID FRANS SIMON

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F9/7019 ,  G03F7/70466 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/708

Abstract: 본발명은: a) 기준기판에제 1 마크패턴을제공하는단계; b) 기준기판상에제 1 레지스트층을제공하는단계 -상기제 1 레지스트층은제 1 레지스트의현상에필요한최소방사선도즈를가짐- ; c) 패터닝된방사선빔을형성하기위해, 방사선빔의단면에제 2 마크패턴을부여하는데 기준패터닝디바이스를이용하는단계; 및 d) 제 1 레지스트층의최소방사선도즈이상의누적된방사선도즈를받은제 2 마크패턴에따른제 1 레지스트층의타겟부내의노광영역들을생성하도록상기패터닝된방사선빔으로기준기판의제 1 레지스트층의타겟부를 n 번노광하는단계 -n은적어도 2의값을갖는정수임- 를포함하는방법에관한것이다.

Abstract translation: 本发明提供了一种制造半导体器件的方法，包括：a）在参考衬底上提供第一标记图案; b）在参考衬底上提供第一抗蚀剂层，第一抗蚀剂层具有显影第一抗蚀剂所需的最小辐射剂量; c）使用参考图案形成装置将第二标记图案赋予辐射束的横截面以形成图案化的辐射束; 并且d）第一辐射以产生暴露区域在所述第一抗蚀剂层的目标部分根据所述第二标记图案的图案化的束抗蚀剂的参考衬底的层接收到的第一抗蚀剂层的累积辐射剂量高于最小辐射剂量 将目标部分的目标部分暴露n次具有至少2的值的整数。

公开(公告)号：JP2006019738A

公开(公告)日：2006-01-19

申请号：JP2005189783

申请日：2005-06-29

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： FRANCISCUS VAN HAREN RICHARD J ,  LALBAHADOERSING SANJAYSINGH ,  MEGENS HENRY

IPC: H01L21/027 ,  G03F9/00 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a marker structure including line elements and trench elements arranged in order repeatedly. SOLUTION: The method includes a step for filling the trench element with silicon dioxide and flattening the marker structure. A sacrifice oxide layer is caused to grow on the surface of a semiconductor, a first subset of line elements is exposed to ion injection beams including dopant seeds, the first subset it doped, and its etching rate is varied. The dopant seed is activated by annealing the substrate, the sacrifice oxide layer is removed by etching the substrate surface, the first subset is set to the height of a first level, and a topology is formed such that the first subset has the first level different from a second level of the marker structure surface part different from the first subset. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种制造标记结构的方法，该标记结构包括重复排列的线元件和沟槽元件。 解决方案：该方法包括用二氧化硅填充沟槽元件并使标记结构变平的步骤。 导致牺牲氧化物层在半导体的表面上生长，线元件的第一子集暴露于包括掺杂剂种子的离子注入束，其掺杂的第一子集，并且其蚀刻速率是变化的。 通过退火衬底来激活掺杂剂种子，通过蚀刻衬底表面去除牺牲氧化物层，将第一子集设置为第一层的高度，形成拓扑，使得第一子集具有第一层不同 来自与第一子集不同的标记结构表面部分的第二级。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2009076936A

公开(公告)日：2009-04-09

申请号：JP2008317622

申请日：2008-12-12

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： FRANCISCUS VAN HAREN RICHARD J ,  LALBAHADOERSING SANJAYSINGH ,  MEGENS HENRY

IPC: H01L21/027 ,  G03F9/00

CPC classification number: H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a marker structure including line elements and trench elements that are arranged sequentially and repeatedly. SOLUTION: The method includes a step of filling trench elements with a silicon dioxide to level the marker structure. A sacrificial oxide layer is grown on the surface of a semiconductor. A first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a suface portion of the marker structure different from the first subset. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造包括依次重复布置的线元件和沟槽元件的标记结构的方法。 解决方案：该方法包括用二氧化硅填充沟槽元件以对标记结构进行平坦化的步骤。 在半导体的表面上生长牺牲氧化物层。 线元件的第一子集暴露于包括掺杂剂物质的离子注入束以掺杂并改变第一子集的蚀刻速率。 将衬底退火以激活掺杂剂物质，并且蚀刻半导体表面以去除牺牲氧化物层，并将第一子集级别化为第一级并且创建拓扑，使得第一子集具有与第二子集不同的第一级 标记结构的表面部分的水平不同于第一子集。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007273971A

公开(公告)日：2007-10-18

申请号：JP2007057070

申请日：2007-03-07

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LALBAHADOERSING SANJAYSINGH ,  MUSA SAMI

IPC: H01L21/027 ,  G03F9/00

CPC classification number: H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/3105 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for protecting and reproducing an alignment mark. SOLUTION: A part of a hard mask 414 located above a lower structure of an alignment mark 401 is selectively exposed with a predetermined exposure dose. The surface region 421 of hard mask coating on which this quantity of radiation has been irradiated rises above other regions on the surface of the hard mask. The elevated region 416 of the hard mask is formed in a corresponding location to the trench 406 of the lower layer alignment mark 401, and this elevated region 416 becomes a new alignment mark where the horizontal position of the lower layer alignment mark 401 is stored. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种保护和再现对准标记的方法。 解决方案：位于对准标记401的下部结构上方的硬掩模414的一部分以预定的曝光剂量选择性地曝光。 在其上照射有这种辐射量的硬掩模涂层的表面区域421在硬掩模的表面上方高于其它区域。 硬掩模的升高区域416形成在下层对准标记401的沟槽406的对应位置，并且该升高区域416变为存储下层对准标记401的水平位置的新的对准标记。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006191080A

公开(公告)日：2006-07-20

申请号：JP2005376941

申请日：2005-12-28

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： LALBAHADOERSING SANJAYSINGH ,  PIETERS MARCO JOHANNES ANNEMAR ,  HAUSCHILD JAN ,  VAN DE VIN COEN

IPC: H01L21/027 ,  G03F9/00

CPC classification number: G03F9/7084 ,  G03F7/70633

Abstract: PROBLEM TO BE SOLVED: To provide the method of measuring information provided by a substrate.
SOLUTION: This substrate comprises feature formed by lithography equipment. This method comprises the steps of projecting light beam on a marker arranged in upper part of and/or near the feature on the substrate, and detecting information provided by this marker using a sensor. Coating is arranged on the substrate. Therefore, when this coating is between the light beam and the feature, the light beam is protected from substantially becoming cause of reading incorrectly information provided by the marker by being reflected.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供由基板提供的测量信息的方法。

解决方案：该基板包括由光刻设备形成的特征。 该方法包括以下步骤：将光束投影在布置在基板上的特征的上部和/或附近的标记上，以及使用传感器检测由该标记提供的信息。 涂层布置在基底上。 因此，当这种涂层在光束和特征之间时，防止光束基本上成为通过反射来读取由标记提供的不正确信息的原因。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：NL1036191A1

公开(公告)日：2009-06-08

申请号：NL1036191

申请日：2008-11-13

Applicant: ASML NETHERLANDS BV

Inventor： LALBAHADOERSING SANJAYSINGH ,  MUSA SAMI ,  WARNAAR PATRICK ,  DOYTCHEVA MAYA ANGELOVA ,  HAREN RICHARD JOHANNES FRANCIS

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/68

公开(公告)号：SG123769A1

公开(公告)日：2006-07-26

申请号：SG200508373

申请日：2005-12-23

Applicant: ASML NETHERLANDS BV

Inventor： LALBAHADOERSING SANJAYSINGH ,  PIETERS MARCO JOHANNES ANNEMAR ,  HAUSCHILD JAN ,  VIN VAN DE COEN

Abstract: A method for measuring information provided by a substrate (W) is disclosed. The substrate (W) includes a feature (300) that has been created by a lithographic apparatus. The method includes projecting a beam of light (100) onto a marker (200) disposed above and/or near the feature (300) on the substrate (W), and detecting information provided by the marker (200) with a sensor. A coating (330) is disposed on the substrate (W) so that the coating (330) lies between the beam of light (100) and the feature (300) to substantially prevent the beam of light (100) from being reflected by the feature (300) and causing an inaccurate readout of the information provided by the marker (200).

公开(公告)号：NL2002998A1

公开(公告)日：2009-12-22

申请号：NL2002998

申请日：2009-06-11

Applicant: ASML NETHERLANDS BV

Inventor： PROSYENTSOV VITALIY ,  LALBAHADOERSING SANJAYSINGH ,  MUSA SAMI ,  LEE HYUN-WOO

IPC: G03F7/20

公开(公告)号：NL2002954A1

公开(公告)日：2009-12-14

申请号：NL2002954

申请日：2009-06-03

Applicant: ASML NETHERLANDS BV

Inventor： MUSA SAMI ,  HAREN RICHARD VAN ,  LALBAHADOERSING SANJAYSINGH

IPC: G03F7/20 ,  H01L23/544