公开(公告)号：JP2012165021A

公开(公告)日：2012-08-30

申请号：JP2012115353

申请日：2012-05-21

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： NIHTIANOV STOYAN ,  VAN DER SIJS ARIE JOHAN ,  MOEST BEARRACH ,  KEMPER PETRUS WILHELMUS JOSEPH MARIA ,  HAAST MARC ANTONIUS MARIA ,  BAAS GERARDUS WILHELMUS PETRUS ,  NANVER LIS KAREN ,  SARUBBI FRANCESCO ,  SCHUWER ANTONIUS ANDREAS JOHANNES ,  GOMMEREN GREGORY MICHA ,  POT MARTIJN ,  SCHOLTES THOMAS LUDOVICUS MARIA

IPC: H01L21/027 ,  H01L31/10

CPC classification number: H01L31/103 ,  G03F7/7085 ,  G03F7/70958 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/1185 ,  H01L31/1804 ,  Y02E10/547

Abstract: PROBLEM TO BE SOLVED: To provide a radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector.SOLUTION: The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths of 10 to 200 nm and/or charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area on a first surface side with a doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of a dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area on the first surface side of the silicon substrate. The first electrode is connected to the dopant layer. The second electrode is connected to the silicon substrate.

Abstract translation: 要解决的问题：提供一种辐射检测器，一种制造辐射检测器的方法以及包括一个辐射检测器的光刻设备。 解决方案：辐射检测器具有辐射敏感表面。 辐射敏感表面对10至200nm的辐射波长和/或带电粒子敏感。 辐射检测器具有硅衬底，掺杂剂层，第一电极和第二电极。 硅衬底在第一表面侧的表面区域中设置有具有一定导电类型的掺杂分布。 掺杂剂层设置在硅衬底的第一表面侧上。 掺杂剂层具有掺杂剂材料的第一层和第二层。 第二层是与硅衬底的第一表面侧上的表面区域接触的扩散层。 第一电极连接到掺杂剂层。 第二电极连接到硅衬底。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009016817A

公开(公告)日：2009-01-22

申请号：JP2008158609

申请日：2008-06-18

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： NIHTIANOV STOYAN ,  VAN DER SIJS ARIE JOHAN ,  MOEST BEARRACH ,  KEMPER PETRUS WILHELMUS JOSEPH ,  HAAST MARC ANTONIUS MARIA ,  BAAS GERARDUS WILHELMUS PETRUS ,  NANVER LIS KAREN ,  SARUBBI FRANCESCO ,  SCHUWER ANTONIUS ANDREAS JOHAN ,  GOMMEREN GREGORY MICHA ,  POT MARTIJN ,  SCHOLTES THOMAS LUDOVICUS MARI

IPC: H01L31/10 ,  H01L21/027

CPC classification number: H01L31/103 ,  G03F7/7085 ,  G03F7/70958 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/1185 ,  H01L31/1804 ,  Y02E10/547

Abstract: PROBLEM TO BE SOLVED: To provide a radiation detector 1, a method of manufacturing a radiation detector, and a lithographic apparatus including a radiation detector.
SOLUTION: The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive to radiation with a wavelength between 10-200 nm and/or for charged particles. The radiation detector 1 has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conductivity type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to the dopant layer. The second electrode is connected to the silicon substrate.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种辐射检测器1，一种制造辐射检测器的方法以及包括一个辐射检测器的光刻设备。 解决方案：辐射探测器具有辐射敏感表面。 辐射敏感表面对波长在10-200nm和/或带电粒子之间的辐射敏感。 辐射检测器1具有硅衬底，掺杂剂层，第一电极和第二电极。 硅衬底在第一表面侧的表面区域设置有一定导电类型的掺杂分布。 掺杂剂层设置在硅衬底的第一表面侧上。 掺杂剂层具有掺杂剂材料的第一层和第二层。 第二层是与硅衬底的第一表面侧的表面区域接触的扩散层。 第一电极连接到掺杂剂层。 第二电极连接到硅衬底。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：SG148972A1

公开(公告)日：2009-01-29

申请号：SG2008048241

申请日：2008-06-25

Applicant: ASML NETHERLANDS BV

Inventor： NIHTIANOV STOYAN ,  VAN DER SIJS ARIE JOHAN ,  MOEST BEARRACH ,  KEMPER PETRUS WILHELMUS JOSEPHUS MARIA ,  HAAST MARC ANTONIUS MARIA ,  BAAS GERARDUS WILHELMUS PETRUS ,  NANVER LIS KAREN ,  SARUBBI FRANCESCO ,  SCHUWER ANTONIUS ANDREAS JOHANNES ,  GOMMEREN GREGORY MICHA ,  POT MARTIJN ,  SCHOLTES THOMAS LUDOVICUS MARIA

Abstract: RADIATION DETECTOR, METHOD OF MANUFACTURING A RADIATION DETECTOR AND LITHOGRAPHIC APPARATUS COMPRISING A RADIATION DETECTOR The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10 - 200 nm and/or for charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.