公开(公告)号：JP2006352112A

公开(公告)日：2006-12-28

申请号：JP2006155593

申请日：2006-06-05

Applicant: ASML NETHERLANDS BV

Inventor： SINKE ARNOLD ,  HAUSCHILD JAN

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To improve the compensation of wafer surface topography. SOLUTION: A lithography apparatus includes a substrate table built so that a substrate is held; a projection system constituted so that a radiation beam may be projected on a target part of the substrate through an exposure slit region; a pattern forming device constituted to form a radiation beam pattern formed by giving a pattern in the section of the radiation beam and which focuses the pattern formed radiation beam on the target area of the substrate within a depth of a focus (DOF); and a measuring system constituted so that at least the partial surface topography of the target part is measured. The projection system is configured to form a controlled exposure slit region adjusted so that a surface topography change is equal to or smaller than the depth of the focus on it by adjusting the size of the exposure slit region. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：NL2003623A

公开(公告)日：2010-05-10

申请号：NL2003623

申请日：2009-10-12

Applicant: ASML NETHERLANDS BV

Inventor： BOXMEER JOHAN ,  ASTEN NICOLAAS ,  SINKE ARNOLD ,  TAS MARNIX ALDERT ,  TIMMERMANS JOHN ,  POMMEREN PLACE

IPC: G01N21/47 ,  G03F7/20

公开(公告)号：NL2004688A

公开(公告)日：2010-11-18

申请号：NL2004688

申请日：2010-05-10

Applicant: ASML NETHERLANDS BV

Inventor： WIT JOHANNES ,  SINKE ARNOLD ,  TAS MARNIX ,  HUGERS RONALD

IPC: G01N21/47 ,  G03F7/20

公开(公告)号：NL1036683A1

公开(公告)日：2009-10-15

申请号：NL1036683

申请日：2009-03-10

Applicant: ASML NETHERLANDS BV

Inventor： SINKE ARNOLD ,  BOXMEER JOHAN MARIA VAN

IPC: G03F7/20 ,  G01B11/00