公开(公告)号：WO2013189724A3

公开(公告)日：2014-05-15

申请号：PCT/EP2013061370

申请日：2013-06-03

Applicant: ASML NETHERLANDS BV

Inventor： HINNEN PAUL ,  WANG SHU-JIN ,  LEEWIS CHRISTIAN ,  PAO KUO-FENG

IPC: G03F7/20 ,  G03F1/44

CPC classification number: G03F7/70641 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

Abstract translation: 确定光刻设备的焦点的方法具有以下步骤。 使用光刻工艺在衬底上产生第一和第二结构，第一结构具有特征，其具有取决于焦点和曝光扰动（例如剂量或像差）的不对称性的轮廓。 第二结构具有这样的特征，其具有与第一结构不同的焦点敏感性，并且与第一结构不同的曝光扰动敏感度。 散射仪信号用于确定用于产生第一结构的聚焦值。 这可以使用第二散射仪信号和/或在光刻处理中使用的记录的曝光扰动设置来完成，以选择用于使用第一散射仪信号确定聚焦值的校准曲线，或者通过使用具有与 第一和第二散射仪信号。

公开(公告)号：NL2010905A

公开(公告)日：2013-12-24

申请号：NL2010905

申请日：2013-06-03

Applicant: ASML NETHERLANDS BV

Inventor： PAO KUO-FENG ,  HINNEN PAUL ,  WANG SHU-JIN ,  LEEWIS CHRISTIAN

IPC: G03F7/20 ,  H01L21/68