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    INSPECTION METHOD AND APPARATUS
    1.
    发明申请
    INSPECTION METHOD AND APPARATUS 审中-公开
    检验方法和装置

    公开(公告)号：WO2010049348A3

    公开(公告)日：2011-03-17

    申请号：PCT/EP2009063918

    申请日：2009-10-22

    Applicant: ASML NETHERLANDS BV ,  LEEWIS CHRISTIAN ,  VAN DE KERKHOF MARCUS ,  VAN DER MAST KAREL ,  VANOPPEN PETER ,  ALVAREZ SANCHEZ RUBEN

    Inventor： LEEWIS CHRISTIAN ,  VAN DE KERKHOF MARCUS ,  VAN DER MAST KAREL ,  VANOPPEN PETER ,  ALVAREZ SANCHEZ RUBEN

    IPC: G03F7/20

    CPC classification number: G03F7/70625

    Abstract: In a method for determining one or more properties of a substrate, scatterometry spectra can be measured from one or more targets on the substrate. Reconstructions of each of said spectra can be performed to derive one or more values for the property of the substrate, by comparing representations of each of the measured spectra with one or more modeled representations of spectra calculated using variable parameter values. At least one parameter in the reconstruction for each spectrum can be linked to the value of the parameter used in the reconstruction for a different spectrum.

    Abstract translation: 在确定衬底的一个或多个特性的方法中，可以从衬底上的一个或多个靶测量散射光谱。 可以通过将每个测量光谱的表示与使用可变参数值计算的光谱的一个或多个建模表示进行比较，来执行每个所述光谱的重建以导出衬底性质的一个或多个值。 每个频谱的重建中至少有一个参数可以链接到在不同频谱的重构中使用的参数的值。

    METHOD OF DETERMINING FOCUS, INSPECTION APPARATUS, PATTERNING DEVICE, SUBSTRATE AND DEVICE MANUFACTURING METHOD
    2.
    发明申请
    METHOD OF DETERMINING FOCUS, INSPECTION APPARATUS, PATTERNING DEVICE, SUBSTRATE AND DEVICE MANUFACTURING METHOD 审中-公开
    确定焦点的方法，检查装置，图案装置，基板和装置的制造方法

    公开(公告)号：WO2013189724A3

    公开(公告)日：2014-05-15

    申请号：PCT/EP2013061370

    申请日：2013-06-03

    Applicant: ASML NETHERLANDS BV

    Inventor： HINNEN PAUL ,  WANG SHU-JIN ,  LEEWIS CHRISTIAN ,  PAO KUO-FENG

    IPC: G03F7/20 ,  G03F1/44

    CPC classification number: G03F7/70641 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70683

    Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

    Abstract translation: 确定光刻设备的焦点的方法具有以下步骤。 使用光刻工艺在衬底上产生第一和第二结构，第一结构具有特征，其具有取决于焦点和曝光扰动（例如剂量或像差）的不对称性的轮廓。 第二结构具有这样的特征，其具有与第一结构不同的焦点敏感性，并且与第一结构不同的曝光扰动敏感度。 散射仪信号用于确定用于产生第一结构的聚焦值。 这可以使用第二散射仪信号和/或在光刻处理中使用的记录的曝光扰动设置来完成，以选择用于使用第一散射仪信号确定聚焦值的校准曲线，或者通过使用具有与 第一和第二散射仪信号。

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