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    INSPECTION METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD
    1.
    发明申请
    INSPECTION METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD 审中-公开
    检查方法和设备，光刻设备，光刻处理单元和设备制造方法

    公开(公告)号：WO2010076232A3

    公开(公告)日：2010-09-10

    申请号：PCT/EP2009067403

    申请日：2009-12-17

    Applicant: ASML NETHERLANDS BV ,  CRAMER HUGO ,  HINNEN PAUL

    Inventor： CRAMER HUGO ,  HINNEN PAUL

    IPC: G03F7/20

    CPC classification number: G03F7/70683 ,  G03F1/14 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70641 ,  Y10T428/24802

    Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.

    Abstract translation: 为了确定曝光设备是否输出正确剂量的辐射并且曝光设备的投影系统正确地聚焦辐射，在掩模上使用测试图案以将特定标记印刷到基板上。 该标记可以通过检查装置（例如散射仪）来测量，以确定是否存在焦点，剂量和其他相关特性中的误差。 测试图案被布置为使得通过测量使用掩模曝光的图案的性质可以容易地确定焦点和剂量的变化。 掩模的测试图案被布置为使得其在衬底表面上产生标记图案。 标记图案包含具有至少两个可测量的侧壁角度的结构。 结构的侧壁角度之间的不对称性与曝光设备的曝光辐射的焦点（或散焦）有关。 因此可以通过测量印刷标记图案结构的侧壁角度的不对称来确定散焦程度。

    METHOD OF DETERMINING FOCUS, INSPECTION APPARATUS, PATTERNING DEVICE, SUBSTRATE AND DEVICE MANUFACTURING METHOD
    2.
    发明申请
    METHOD OF DETERMINING FOCUS, INSPECTION APPARATUS, PATTERNING DEVICE, SUBSTRATE AND DEVICE MANUFACTURING METHOD 审中-公开
    确定焦点的方法，检查装置，图案装置，基板和装置的制造方法

    公开(公告)号：WO2013189724A3

    公开(公告)日：2014-05-15

    申请号：PCT/EP2013061370

    申请日：2013-06-03

    Applicant: ASML NETHERLANDS BV

    Inventor： HINNEN PAUL ,  WANG SHU-JIN ,  LEEWIS CHRISTIAN ,  PAO KUO-FENG

    IPC: G03F7/20 ,  G03F1/44

    CPC classification number: G03F7/70641 ,  G03F1/42 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70683

    Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

    Abstract translation: 确定光刻设备的焦点的方法具有以下步骤。 使用光刻工艺在衬底上产生第一和第二结构，第一结构具有特征，其具有取决于焦点和曝光扰动（例如剂量或像差）的不对称性的轮廓。 第二结构具有这样的特征，其具有与第一结构不同的焦点敏感性，并且与第一结构不同的曝光扰动敏感度。 散射仪信号用于确定用于产生第一结构的聚焦值。 这可以使用第二散射仪信号和/或在光刻处理中使用的记录的曝光扰动设置来完成，以选择用于使用第一散射仪信号确定聚焦值的校准曲线，或者通过使用具有与 第一和第二散射仪信号。

    METHODS AND PATTERNING DEVICES AND APPARATUSES FOR MEASURING FOCUS PERFORMANCE OF A LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD
    3.
    发明专利
    METHODS AND PATTERNING DEVICES AND APPARATUSES FOR MEASURING FOCUS PERFORMANCE OF A LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD 未知

    公开(公告)号：SG11201804232QA

    公开(公告)日：2018-06-28

    申请号：SG11201804232Q

    申请日：2016-12-06

    Applicant: ASML NETHERLANDS BV

    Inventor： HINNEN PAUL ,  MATHIJSSEN SIMON ,  GOOSEN MAIKEL ,  VAN DER SCHAAR MAURITS ,  DEN BOEF ARIE

    IPC: G03F7/20

    Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

    INSPECTION METHOD FOR LITHOGRAPHY
    5.
    发明专利
    INSPECTION METHOD FOR LITHOGRAPHY 未知

    公开(公告)号：SG175246A1

    公开(公告)日：2011-12-29

    申请号：SG2011075637

    申请日：2010-05-04

    Applicant: ASML NETHERLANDS BV

    Inventor： DEN BOEF ARIE ,  CRAMER HUGO ,  HINNEN PAUL

    Abstract: A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

    INSPECTION METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD
    8.
    发明专利
    INSPECTION METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD 未知

    公开(公告)号：SG172294A1

    公开(公告)日：2011-07-28

    申请号：SG2011045341

    申请日：2009-12-17

    Applicant: ASML NETHERLANDS BV

    Inventor： CRAMER HUGO ,  HINNEN PAUL

    Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.

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