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公开(公告)号：AU9088601A
公开(公告)日：2002-03-26
申请号：AU9088601
申请日：2001-09-14
Applicant: ATHEROS COMM INC
Inventor： WEBER DAVID J , YUE PATRICK , SU DAVID
Abstract: The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to the reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulator may be thicker than the first insulator. This results in the first transconductance being greater than the second transconductance, and the second breakdown voltage being greater than the first breakdown voltage.
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公开(公告)号：WO0223634A9
公开(公告)日：2003-04-03
申请号：PCT/US0128678
申请日：2001-09-14
Applicant: ATHEROS COMM INC
Inventor： WEBER DAVID J , YUE PATRICK , SU DAVID
CPC classification number: H01L24/06 , H01L23/66 , H01L24/48 , H01L24/49 , H01L27/088 , H01L2223/6644 , H01L2224/05554 , H01L2224/48247 , H01L2224/48257 , H01L2224/4911 , H01L2224/49171 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01031 , H01L2924/01051 , H01L2924/01052 , H01L2924/10329 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H03F1/223 , H03F3/24 , H03F3/45188 , H03F2200/06 , H03F2203/45638 , H03F2203/45652 , H04B2001/0408 , Y10S977/724 , H01L2924/00 , H01L2224/45099
Abstract: The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulatory may be thicker than the first insulator. This results in the first transconductance being greater than the second transconductance, and the second breakdown voltage being greater than the first breakdown voltage.
Abstract translation: 本发明提供一种用于放大通信信号的耐击穿晶体管结构。 该结构包括具有连接到地的源极的第一NMOS晶体管和用于接收输入射频信号的第一栅极。 第一栅极设置在第一绝缘体之上，并且第一NMOS晶体管具有与之相关联的第一跨导和第一击穿电压。 还包括第二NMOS晶体管，其源极连接到第一NMOS晶体管的漏极，连接到参考DC电压的栅极和为放大的无线电信号提供输出的漏极，负载被布置在参考DC电压 和第二NMOS晶体管的漏极。 第二栅极设置在第二绝缘体上方，第二NMOS晶体管具有与之相关联的第二跨导和第二击穿电压，并且第二绝缘体可以比第一绝缘体厚。 这导致第一跨导大于第二跨导，并且第二击穿电压大于第一击穿电压。
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公开(公告)号：WO0223634A3
公开(公告)日：2002-06-20
申请号：PCT/US0128678
申请日：2001-09-14
Applicant: ATHEROS COMM INC
Inventor： WEBER DAVID J , YUE PATRICK , SU DAVID
CPC classification number: H01L24/06 , H01L23/66 , H01L24/48 , H01L24/49 , H01L27/088 , H01L2223/6644 , H01L2224/05554 , H01L2224/48247 , H01L2224/48257 , H01L2224/4911 , H01L2224/49171 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01031 , H01L2924/01051 , H01L2924/01052 , H01L2924/10329 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H03F1/223 , H03F3/24 , H03F3/45188 , H03F2200/06 , H03F2203/45638 , H03F2203/45652 , H04B2001/0408 , Y10S977/724 , H01L2924/00 , H01L2224/45099
Abstract: The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulatory may be thicker than the first insulator. This results in the first transconductance being greater than the second transconductance, and the second breakdown voltage being greater than the first breakdown voltage.
Abstract translation: 本发明提供一种用于放大通信信号的耐击穿晶体管结构。 该结构包括具有连接到地的源极的第一NMOS晶体管和用于接收输入射频信号的第一栅极。 第一栅极设置在第一绝缘体之上，并且第一NMOS晶体管具有与之相关联的第一跨导和第一击穿电压。 还包括第二NMOS晶体管，其源极连接到第一NMOS晶体管的漏极，连接到参考DC电压的栅极和为放大的无线电信号提供输出的漏极，负载被布置在参考DC电压 和第二NMOS晶体管的漏极。 第二栅极设置在第二绝缘体上方，第二NMOS晶体管具有与之相关联的第二跨导和第二击穿电压，并且第二绝缘体可以比第一绝缘体厚。 这导致第一跨导大于第二跨导，并且第二击穿电压大于第一击穿电压。
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