Abstract:
A radio-frequency (RF) integrated circuit is described. In one embodiment, the IC comprises multiple metal layers forming multiple transistors on a non-epitaxial substrate. The transistors are step and mirror symmetric. Also, the RF signal lines are on a top metal layer above all other metal layers and the power and ground planes are on a bottom metal layer below all other metal layers. The top and bottom metal layers are separated by a shield that extends beyond the RF signal lines by a distance that is at least the same distance that the shield is away from the RF lines. Low frequency signals are on signal lines below the top metal layer.
Abstract:
The present invention aims at eliminating the effects of frequency offsets between two transceivers by adjusting frequencies used during transmission. In this invention, methods for correcting the carrier frequency and the samplin g frequency during transmission are provided, including both digital and analo g implementations of such methods. The receiver determines the relative frequency offset between the transmitter and the receiver, and uses this information to correct this offset when the receiver transmits its data to t he original transmitter in the return path, so that the signal received by the original transmitter is in sampling and carrier frequency lock with the original transmitter's local frequency reference.
Abstract:
The present invention aims at eliminating the effects of frequency offsets between two transceivers by adjusting frequencies used during transmission. In this invention, methods for correcting the carrier frequency and the sampling frequency during transmission are provided, including both digital and analog implementations of such methods. The receiver determines the relative frequency offset between the transmitter and the receiver, and uses this information to correct this offset when the receiver transmits its data to the original transmitter in the return path, so that the signal received by the original transmitter is in sampling and carrier frequency lock with the original transmitter's local frequency reference.
Abstract:
The present invention aims at eliminating the effects of frequency offsets between two transceivers by adjusting frequencies used during transmission. In this invention, methods for correcting the carrier frequency and the sampling frequency during transmission are provided, including both digital and analog implementations of such methods. The receiver determines the relative frequency offset between the transmitter and the receiver, and uses this information to correct this offset when the receiver transmits its data to the original transmitter in the return path, so that the signal received by the original transmitter is in sampling and carrier frequency lock with the original transmitter's local frequency reference.
Abstract:
The present invention provides a variable gain amplifier with a plurality of gain stages in which each of the gain stages is implemented using a circuit that implements a neutralization approach. This variable gain amplifier provides stable operation characteristics as different gain stages within the variable gain amplifier are turned on and off. This variable gain amplifier also increases linearity across the entire operating range. Additionally, the variable gain amplifier of the present invention provides a constant input impedance through different gain settings. Further, the present invention provides a variable gain amplifier in which each of the various gain stages therein maximize the available voltage swing. Finally, this variable gain amplifier improves common-mode rejection performance and attenuates unwanted harmonics.
Abstract:
The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to the reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulator may be thicker than the first insulator. This results in the first transconductance being greater than the second transconductance, and the second breakdown voltage being greater than the first breakdown voltage.
Abstract:
The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulatory may be thicker than the first insulator. This results in the first transconductance being greater than the second transconductance, and the second breakdown voltage being greater than the first breakdown voltage.
Abstract:
The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulatory may be thicker than the first insulator. This results in the first transconductance being greater than the second transconductance, and the second breakdown voltage being greater than the first breakdown voltage.
Abstract:
A radio-frequency (RF) integrated circuit is described. In one embodiment, the IC comprises multiple metal layers forming multiple transistors on a non-epitaxial substrate. The transistors are step and mirror symmetric. Also, the RF signal lines are on a top metal layer above all other metal layers and the power and ground planes are on a bottom metal layer below all other metal layers. The top and bottom metal layers are separated by a shield that extends beyond the RF signal lines by a distance that is at least the same distance that the shield is away from the RF lines. Low frequency signals are on signal lines below the top metal layer.
Abstract:
A dual band radio is constructed using a primary and secondary transceiver. The primary transceiver is a complete radio that is operational in a stand alone configuration. The secondary transceiver is a not a complete radio and is configured to re-use components such as fine gain control and fine frequency stepping of the primary transceiver to produce operational frequencies of the secondary transceiver. The primary transceiver acts like an intermediate frequency device for the secondary transceiver. Switches are utilized to divert signals to/from the primary transceiver from/to the secondary transceiver. The switches are also configured to act as gain control devices. Antennas are selected using either wideband or narrowband antenna switches that are configured as a diode bridge having high impedance at operational frequencies on control lines that bias the diodes.