公开(公告)号：DE60034496T2

公开(公告)日：2008-01-10

申请号：DE60034496

申请日：2000-01-31

Applicant: AXCELIS TECH INC

Inventor： BURKE JOHN WILLIAM ,  CARDOSO ANDRE GIL ,  MCGINNITY JOSEPH GERARD

IPC: G01K1/14 ,  G01K7/00 ,  G01K1/16 ,  G01K7/02

Abstract: A contact temperature probe having a probe head (2, 20) which includes a temperature sensor (13) having lead wires (10, 12, 10', 12') which exit the head and run through a shield for shielding the wires from the process, wherein the probe head is supported for pivoting motion only by the lead wires and the shield is thermally isolated from the probe head.

公开(公告)号：DE60034496D1

公开(公告)日：2007-06-06

申请号：DE60034496

申请日：2000-01-31

Applicant: AXCELIS TECH INC

Inventor： BURKE JOHN WILLIAM ,  CARDOSO ANDRE GIL ,  MCGINNITY JOSEPH GERARD

IPC: G01K1/14 ,  G01K7/00 ,  G01K1/16 ,  G01K7/02

Abstract: A contact temperature probe having a probe head (2, 20) which includes a temperature sensor (13) having lead wires (10, 12, 10', 12') which exit the head and run through a shield for shielding the wires from the process, wherein the probe head is supported for pivoting motion only by the lead wires and the shield is thermally isolated from the probe head.

公开(公告)号：DE60021982D1

公开(公告)日：2005-09-22

申请号：DE60021982

申请日：2000-11-03

Applicant: AXCELIS TECH INC

Inventor： HAN QUIGYAN ,  SAKTHIVEL PALANI ,  RUFFIN RICKY ,  CARDOSO ANDRE GIL

IPC: H01L21/302 ,  G01N21/68 ,  G03F7/42 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The oxygen free plasma reacts with a substrate 88 having a photoresist and/or residues thereon to produce emitted light signals corresponding to an oxygen free reaction product. The endpoint is determined by optically measuring a primary emission signal of the oxygen free reaction product at a wavelength of about 387nm. The endpoint is determined when the plasma no longer reacts with the photoresist and/or residues on the substrate to produce the emitted light at about 387nm, an indication that the photoresist and /or residues have been removed from the wafer. Secondary emission signals of the oxygen free reaction product at about 358nm and 431nm can also be monitored for determining the endpoint.

公开(公告)号：DE69927921T2

公开(公告)日：2006-07-27

申请号：DE69927921

申请日：1999-12-13

Applicant: AXCELIS TECH INC

Inventor： PENELON JOEL ,  CARDOSO ANDRE GIL

IPC: G01K1/14 ,  H01L21/302 ,  G01K1/08 ,  G01K1/16 ,  G01K7/00 ,  H01L21/205 ,  H01L21/66

Abstract: A temperature probe for use in low pressure processes having an improved thermal response wherein fluid is supplied to a fluid transport passageway (16, 22, 32, 64, 88) in the probe head for creating an increased pressure between the probe head (10, 24, 30, 66, 80) and a semiconductor wafer (50) for increasing the thermal conductivity therebetween.

公开(公告)号：DE60021982T2

公开(公告)日：2006-07-06

申请号：DE60021982

申请日：2000-11-03

Applicant: AXCELIS TECH INC

Inventor： HAN QUIGYAN ,  SAKTHIVEL PALANI ,  RUFFIN RICKY ,  CARDOSO ANDRE GIL

IPC: G01N21/68 ,  H01L21/302 ,  G03F7/42 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The oxygen free plasma reacts with a substrate 88 having a photoresist and/or residues thereon to produce emitted light signals corresponding to an oxygen free reaction product. The endpoint is determined by optically measuring a primary emission signal of the oxygen free reaction product at a wavelength of about 387nm. The endpoint is determined when the plasma no longer reacts with the photoresist and/or residues on the substrate to produce the emitted light at about 387nm, an indication that the photoresist and /or residues have been removed from the wafer. Secondary emission signals of the oxygen free reaction product at about 358nm and 431nm can also be monitored for determining the endpoint.

公开(公告)号：DE69927921D1

公开(公告)日：2005-12-01

申请号：DE69927921

申请日：1999-12-13

Applicant: AXCELIS TECH INC

Inventor： PENELON JOEL ,  CARDOSO ANDRE GIL

IPC: H01L21/302 ,  G01K1/08 ,  G01K1/14 ,  G01K1/16 ,  G01K7/00 ,  H01L21/205 ,  H01L21/66

Abstract: A temperature probe for use in low pressure processes having an improved thermal response wherein fluid is supplied to a fluid transport passageway (16, 22, 32, 64, 88) in the probe head for creating an increased pressure between the probe head (10, 24, 30, 66, 80) and a semiconductor wafer (50) for increasing the thermal conductivity therebetween.