公开(公告)号：JP2001110775A

公开(公告)日：2001-04-20

申请号：JP2000234323

申请日：2000-08-02

Applicant: AXCELIS TECH INC

Inventor： HAN QINGYUAN ,  DAHIMENE MAHMOUD ,  RUFFIN RICKY ,  PALANIKUMARAN SAKTHIVEL ,  BERRY IVAN LOUIS III

IPC: H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a plasma stripping method, having a high selective ratio and a high processing capacity and a dry ashing process. SOLUTION: This is a method of removing a photoresist 16 and/or residues after etching from an exposed low K dielectric layer 14 and makes a non-oxygen plasma, having electrically neutral particles and charged particles, by exposing a non-oxygen gas to an energy source. Thereafter, the charge particles are selectively removed from the plasma. The electrically neutral particles react with the photoresist 16 and/or the residues after etching to form a volatile gas to be removed from a wafer by a gas flow. The gas composition of the non-oxygen plasma comprises a gas containing hydrogen and a gas containing fluorine, wherein the gas containing fluorine is about 10% or less of the gas composition.

公开(公告)号：DE60021982D1

公开(公告)日：2005-09-22

申请号：DE60021982

申请日：2000-11-03

Applicant: AXCELIS TECH INC

Inventor： HAN QUIGYAN ,  SAKTHIVEL PALANI ,  RUFFIN RICKY ,  CARDOSO ANDRE GIL

IPC: H01L21/302 ,  G01N21/68 ,  G03F7/42 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The oxygen free plasma reacts with a substrate 88 having a photoresist and/or residues thereon to produce emitted light signals corresponding to an oxygen free reaction product. The endpoint is determined by optically measuring a primary emission signal of the oxygen free reaction product at a wavelength of about 387nm. The endpoint is determined when the plasma no longer reacts with the photoresist and/or residues on the substrate to produce the emitted light at about 387nm, an indication that the photoresist and /or residues have been removed from the wafer. Secondary emission signals of the oxygen free reaction product at about 358nm and 431nm can also be monitored for determining the endpoint.

公开(公告)号：DE60021982T2

公开(公告)日：2006-07-06

申请号：DE60021982

申请日：2000-11-03

Applicant: AXCELIS TECH INC

Inventor： HAN QUIGYAN ,  SAKTHIVEL PALANI ,  RUFFIN RICKY ,  CARDOSO ANDRE GIL

IPC: G01N21/68 ,  H01L21/302 ,  G03F7/42 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The oxygen free plasma reacts with a substrate 88 having a photoresist and/or residues thereon to produce emitted light signals corresponding to an oxygen free reaction product. The endpoint is determined by optically measuring a primary emission signal of the oxygen free reaction product at a wavelength of about 387nm. The endpoint is determined when the plasma no longer reacts with the photoresist and/or residues on the substrate to produce the emitted light at about 387nm, an indication that the photoresist and /or residues have been removed from the wafer. Secondary emission signals of the oxygen free reaction product at about 358nm and 431nm can also be monitored for determining the endpoint.