公开(公告)号：JP2002056786A

公开(公告)日：2002-02-22

申请号：JP2001233659

申请日：2001-08-01

Applicant: AXCELIS TECH INC

Inventor： VANDERBERG BO HARALD ,  HORSKY THOMAS N ,  TRUEIRA FRANK RAYMOND

IPC: H01J27/02 ,  H01J27/18 ,  H01J37/08 ,  H01J37/30

Abstract: PROBLEM TO BE SOLVED: To provide an ion source for ion implanting equipment enabling to have very high ionization efficiency, by generating a powerful and uniform magnetic field in an ionization room, and by maintaining it. SOLUTION: The ion source is constituted with an ionization room with an opening 18, partially divided with a wall, and along the path of which an ion beam is extracted and a magnet assembly 45 with, a yoke 46 of the closed form surrounding the whole ionization room in which at least one of coils 49, 51 is twisted around the yoke. The yoke 46 has, generally, a troidal shape and includes a pair of opposite magnetic poles 48a, 48b. Most of magnetic line of flux generated by the coils during operation of the ion source, comes out from the 1st opposite magnetic pole 48a, and passes through the ionization room, and goes into the 2nd opposite magnetic pole 48b. A floating magnetic field generated from the magnet assembly 45 directs in the direction which intersects perpendicularly with the path of the ion beam extracted from the opening 18, and becomes comparatively uniform in the interior of the ionization room.

公开(公告)号：JP2001216935A

公开(公告)日：2001-08-10

申请号：JP2000385315

申请日：2000-12-19

Applicant: AXCELIS TECH INC

Inventor： VANDERBERG BO HARALD

IPC: C23C14/48 ,  H01J37/24 ,  H01J37/248 ,  H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To reduce a loss time for ion beam by hardening a power supply for an ion implantation device. SOLUTION: At least one power supply 64 to supply a voltage for at least one electrode 62 is integrated with a switch device capable of mitigating overload of the electrode 62 where the power supply 64 and the electrode 62 are decoupled in a certain threshold. Also, the method for hardening the power supply includes such steps as watching the electric current from at least one power supply driving at least one electrode, and of insulating the source from the electrode if the current is larger than a certain level of threshold by deciding the level at the threshold.

公开(公告)号：DE60004957T2

公开(公告)日：2004-07-15

申请号：DE60004957

申请日：2000-12-15

Applicant: AXCELIS TECH INC

Inventor： VANDERBERG BO HARALD

IPC: C23C14/48 ,  H01J37/24 ,  H01J37/248 ,  H01J37/317 ,  H01L21/265

Abstract: The ion implantation system includes at least one power supply (102,104,106) for providing voltage to at least one electrode (82,96,98,100) and, a switching system (108) operatively coupled between the at least one power supply and the at least one electrode. The switching system decouples the at least one power supply and the at least one electrode at a predetermined threshold to mitigate overload of the at least one power supply.

公开(公告)号：DE60004957D1

公开(公告)日：2003-10-09

申请号：DE60004957

申请日：2000-12-15

Applicant: AXCELIS TECH INC

Inventor： VANDERBERG BO HARALD

IPC: C23C14/48 ,  H01J37/24 ,  H01J37/248 ,  H01J37/317 ,  H01L21/265

Abstract: The ion implantation system includes at least one power supply (102,104,106) for providing voltage to at least one electrode (82,96,98,100) and, a switching system (108) operatively coupled between the at least one power supply and the at least one electrode. The switching system decouples the at least one power supply and the at least one electrode at a predetermined threshold to mitigate overload of the at least one power supply.