公开(公告)号：JP2002056786A

公开(公告)日：2002-02-22

申请号：JP2001233659

申请日：2001-08-01

Applicant: AXCELIS TECH INC

Inventor： VANDERBERG BO HARALD ,  HORSKY THOMAS N ,  TRUEIRA FRANK RAYMOND

IPC: H01J27/02 ,  H01J27/18 ,  H01J37/08 ,  H01J37/30

Abstract: PROBLEM TO BE SOLVED: To provide an ion source for ion implanting equipment enabling to have very high ionization efficiency, by generating a powerful and uniform magnetic field in an ionization room, and by maintaining it. SOLUTION: The ion source is constituted with an ionization room with an opening 18, partially divided with a wall, and along the path of which an ion beam is extracted and a magnet assembly 45 with, a yoke 46 of the closed form surrounding the whole ionization room in which at least one of coils 49, 51 is twisted around the yoke. The yoke 46 has, generally, a troidal shape and includes a pair of opposite magnetic poles 48a, 48b. Most of magnetic line of flux generated by the coils during operation of the ion source, comes out from the 1st opposite magnetic pole 48a, and passes through the ionization room, and goes into the 2nd opposite magnetic pole 48b. A floating magnetic field generated from the magnet assembly 45 directs in the direction which intersects perpendicularly with the path of the ion beam extracted from the opening 18, and becomes comparatively uniform in the interior of the ionization room.

公开(公告)号：JP2002117780A

公开(公告)日：2002-04-19

申请号：JP2001233658

申请日：2001-08-01

Applicant: AXCELIS TECH INC

Inventor： HORSKY THOMAS N ,  TOMY DALE HOLLINGSWORTH

IPC: C23C14/48 ,  H01J27/12 ,  H01J27/20 ,  H01J37/08 ,  H01J37/317 ,  H01J37/36 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide an ion source for an ion implantation device for containing a solid material source for sputtering and minimizing influence of the change of this material source. SOLUTION: This ion source 10 is partially divided by a wall 12, and has an ionizing chamber 14 having an inlet 45 to which gas for sputtering is injected and an opening 18 from which an ion beam is derived, an electron source 44 to ionize the gas for sputtering in order to form sputtering plasma, and a repeller 100 to supply a material source sputtered by reflecting an electron discharged by the electron source and being ionized by the electron source. The repeller 100 is negatively biased with respect to the wall 12, and contains a slug of sputtable material, and a mounting structure to mount the slug in the ionizing chamber 14, and can continuously give variable bias to give the wide dynamic range of an ion beam current.

公开(公告)号：JP2001135253A

公开(公告)日：2001-05-18

申请号：JP2000306128

申请日：2000-10-05

Applicant: AXCELIS TECH INC

Inventor： HORSKY THOMAS N ,  PEREL ALEXANDER STUART ,  LOIZIDES WILLIAM KEITH

IPC: H01J37/30 ,  H01J27/08 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To provide an ion source and ionizer that ionize decaborane sufficiently accurately and controllably. SOLUTION: This ion source 50 includes an evaporator 51, that accepts solid ion source material like decaborane, an ionizer 53 connected to the evaporator via a supply tube 62, and a heating medium 70 that heats the evaporator and supply tube to maintain the temperature of evaporated decarborane at an optimum value. The ionizer 53 is equipped with a main body, an ion chamber in which decarborane is ionized by an energy-emitting element that produce a plasma, an exit aperture through which an ion beam is extracted, and a cooling mechanism to lower temperature on the wall face of the ion chamber. The energy-emitting element functions at a low output level to prevent additional dissociation of decaborane molecules evaporated by the plasma itself, by minimizing the plasma density in the ion chamber.