公开(公告)号：WO2004107386A2

公开(公告)日：2004-12-09

申请号：PCT/US2004/016073

申请日：2004-05-21

Applicant: AXCELIS TECHNOLOGIES INC. ,  YE, John Zheng ,  BENVENISTE, Victor ,  CRISTOFORO, Michael

Inventor： YE, John Zheng ,  BENVENISTE, Victor ,  CRISTOFORO, Michael

IPC: H01J37/00

CPC classification number: H01J37/05 ,  H01J37/147 ,  H01J37/3171 ,  H01J37/32623 ,  H01J37/32678 ,  H01J2237/1508

Abstract: Ion implantation systems and beamline assemblies therefor are provided, in which multi-cusped magnetic fields are provided in a beamguide and the beamguide is energized to provide microwave electric fields in a traveling wave along the beamguide passageway. The magnetic and electric fields interact to provide an electron-cyclotron resonance condition for beam containment in the beamguide passageway.

Abstract translation: 提供了离子注入系统和其束线组件，其中在光束导向器中设置多通道磁场，并且激光束导向器沿着光束通道在行波中提供微波电场。 磁场和电场相互作用，为光束通道中的光束收容提供电子回旋共振条件。

公开(公告)号：WO2004095477A2

公开(公告)日：2004-11-04

申请号：PCT/US2004/012549

申请日：2004-04-21

Applicant: AXCELIS TECHNOLOGIES INC. ,  KELLERMAN, Peter ,  BENVENISTE, Victor ,  PHARAND, Michel ,  STONE, Dale

Inventor： KELLERMAN, Peter ,  BENVENISTE, Victor ,  PHARAND, Michel ,  STONE, Dale

IPC: H01G

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: An electrostatic clamp for securing a semiconductor wafer during processing. The electrostatic clamp comprises a base member, a resistive layer, a dielectric layer including a gas pressure distribution micro-groove network, a gas gap positioned between a backside of a semiconductor wafer and the dielectric layer, and a pair of high voltage electrodes positioned between the resistive layer and the dielectric layer. The electrostatic clamp can further comprise at least one ground electrode positioned between the resistive layer and the dielectric layer that provides shielding for the gas pressure distribution micro-groove network. The electrostatic clamp is characterized by a heat transfer coefficient of greater than or about 200 mW/Kcm 2 , a response time of less than or about 1 second, and gas leakage of less than or about 0.5 sccm. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. .

Abstract translation: 一种用于在加工过程中固定半导体晶片的静电夹。 静电夹具包括基底构件，电阻层，包括气体压力分布微槽网络的电介质层，位于半导体晶片的背面与电介质层之间的气隙，以及一对位于 电阻层和电介质层。 静电夹具还可以包括位于电阻层和电介质层之间的至少一个接地电极，其为气体压力分布微槽网络提供屏蔽。 静电夹具的特征在于传热系数大于或约200mW / Kcm 2，响应时间小于或约1秒，气体泄漏小于或约0.5sccm。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。 。

公开(公告)号：WO2006049817A2

公开(公告)日：2006-05-11

申请号：PCT/US2005/036509

申请日：2005-10-12

Applicant: AXCELIS TECHNOLOGIES, INC. ,  BENVENISTE, Victor ,  KELLERMAN, Peter

Inventor： BENVENISTE, Victor ,  KELLERMAN, Peter

CPC classification number: H01J37/3171 ,  H01J37/147

Abstract: Systems and methods are provided for focusing a scanned ion beam in an ion implanter. A beam focusing system is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.

Abstract translation: 提供了将扫描离子束聚焦在离子注入机中的系统和方法。 提供了一种束聚焦系统，包括提供相应磁场的第一和第二磁体，其协作地提供磁聚焦场，其具有通常对应于扫描离子束沿扫描方向的时变束位置的时变聚焦场中心。 提出了方法，其包括提供在扫描平面中具有聚焦场中心的聚焦场，以及动态地调整聚焦场，使得聚焦场中心大体上与扫描离子束沿着扫描方向的时变束位置重合 。

公开(公告)号：WO2005098894A1

公开(公告)日：2005-10-20

申请号：PCT/US2005/011328

申请日：2005-04-01

Applicant: AXCELIS TECHNOLOGIES, INC. ,  BENVENISTE, Victor

Inventor： BENVENISTE, Victor

IPC: H01J37/05

CPC classification number: H01J37/05 ,  H01J37/3171

Abstract: Ion implantation systems are provided, comprising a dispersion system (140) located between an ion source (120) and a mass analyzer (26), that operates to selectively pass an extracted ion beam from the ion source toward the mass analyzer or to direct a dispersed ion beam toward the mass analyzer, where the dispersed ion beam has fewer ions of an undesired mass range than the extracted ion beam.

Abstract translation: 提供离子注入系统，其包括位于离子源（120）和质量分析器（26）之间的分散系统（140），其操作以选择性地将离子源从离子源向质量分析器传递，或者引导 分散的离子束朝向质量分析器，其中分散的离子束具有比提取的离子束更少的不期望质量范围的离子。

公开(公告)号：WO2004114358A3

公开(公告)日：2004-12-29

申请号：PCT/US2004/019588

申请日：2004-06-18

Applicant: AXCELIS TECHNOLOGIES INC. ,  BENVENISTE, Victor ,  DEVERGILIO, William ,  VANDERBERG, Bo

Inventor： BENVENISTE, Victor ,  DEVERGILIO, William ,  VANDERBERG, Bo

IPC: H01J37/317

Abstract: A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.

公开(公告)号：WO2004015737A1

公开(公告)日：2004-02-19

申请号：PCT/US2003/023688

申请日：2003-07-29

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： BENVENISTE, Victor

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: Ion implantation systems and beamlines therefor are disclosed, in which a ribbon beam of a relatively large aspect ratio is mass analyzed and collimated to provide a mass analyzed ribbon beam for use in implanting one or more workpieces. The beamline system (12) comprises two similar magnets (22, 24), where the first magnet (22) mass analyzes the ribbon beam to provide an intermediate mass analyzed ion beam, and the second magnet (24) collimates the intermediate beam to provide a uniform mass analyzed ribbon beam to an end station.(18). The symmetrical system provides equidistant beam trajectories (41, 43) for ions across the elongated beam width so as to mitigate non-linearities in the beam transport through the system, such that the resultant mass analyzed beam is highly uniform.

Abstract translation: 公开了离子注入系统和其束线，其中质量分析和准直以提供质量分析的带状束，用于植入一个或多个工件。 束线系统（12）包括两个类似的磁体（22,24），其中第一磁体（22）质量分析带状束以提供中间质量分析离子束，并且第二磁体（24）准直中间梁以提供 （18）。 对称系统为跨越细长波束宽度的离子提供等距离的波束轨迹（41,43），以减轻通过系统的波束传输中的非线性，使得所得到的质量分析波束是高度均匀的。

公开(公告)号：WO2006074200A2

公开(公告)日：2006-07-13

申请号：PCT/US2006/000141

申请日：2006-01-04

Applicant: AXCELIS TECHNOLOGIES, INC. ,  BENVENISTE, Victor ,  DIVERGILIO, William ,  KELLERMAN, Peter

Inventor： BENVENISTE, Victor ,  DIVERGILIO, William ,  KELLERMAN, Peter

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/31703

Abstract: Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.

Abstract translation: 提供了用于在离子注入系统中校准离子束扫描器的方法，包括在沿着扫描方向的多个位置处测量多个初始电流密度值，其中所述值分别对应于多个初始电压扫描间隔中的一个，以及 相应的多个初始扫描时间值中的一个，基于测量的初始电流密度值和初始电压扫描间隔创建线性方程组，并且确定与线性系统的解的对应的一组扫描时间值 减小电流密度分布偏差的方程式。 提供校准系统用于在离子注入系统中校准离子束扫描器，包括剂量测定系统和控制系统。

公开(公告)号：WO2004088732A1

公开(公告)日：2004-10-14

申请号：PCT/US2004/009891

申请日：2004-03-29

Applicant: AXCELIS TECHNOLOGIES INC. ,  KELLERMAN, Peter ,  BENVENISTE, Victor ,  CARLSON, Frederick

Inventor： KELLERMAN, Peter ,  BENVENISTE, Victor ,  CARLSON, Frederick

IPC: H01L21/00

CPC classification number: H01L21/68721 ,  C23C16/4586 ,  C23C16/463 ,  H01L21/67109 ,  H01L21/6875 ,  Y10T279/23

Abstract: The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.

Abstract translation: 本发明涉及一种用于半导体衬底的热冷却的半导体热处理设备和方法。 根据本发明的一个方面，公开了一种气冷夹和相关方法，其通常通过自由分子状态的热传导来提供衬底的冷却。 气冷夹具包括夹板，该夹板具有限定其间的间隙的多个突起，其中间隙的距离或深度与其中的冷却气体的平均自由程度相关联。 气冷夹具还包括压力控制系统，其可操作以控制多个间隙内的冷却气体的背侧压力，从而控制冷却气体的传热系数，其中冷却气体的传热系数主要为 功能的压力和基本上与间隙距离无关。

公开(公告)号：WO2004064100A2

公开(公告)日：2004-07-29

申请号：PCT/US2004/000190

申请日：2004-01-07

Applicant: AXCELIS TECHNOLOGIES INC. ,  BENVENISTE, Victor

Inventor： BENVENISTE, Victor

IPC: H01J

CPC classification number: H01J37/08 ,  H01J2237/31701

Abstract: An improved electrode subassembly for an ion implanter is provided. The subassembly comprises (i) a first generally planar electrode residing in a first plane and having a first aperture; (ii) a second generally planar electrode residing in a second plane generally parallel to the first plane and having a second aperture aligned with the first aperture; and (iii) a pair of connecting rods connecting the first generally planar electrode to the second generally planar electrode. The connecting rods permit generally parallel and slidable movement of the second generally planar electrode with respect to the first generally planar electrode. The connecting rods are positioned in a non-parallel relationship to each other, so that the first and second electrodes when undergoing thermal expansion slide with respect to each other upon the non-parallel connecting rods, to increase or decrease a distance therebetween, while maintaining a parallel relationship.

Abstract translation: 提供了用于离子注入机的改进的电极子组件。 子组件包括（i）驻留在第一平面中并具有第一孔的第一大致平面的电极; （ii）位于大致平行于第一平面并具有与第一孔对准的第二孔的第二平面中的第二大体平面电极; 和（iii）将第一大致平面的电极连接到第二大致平面的电极的一对连接杆。 连接杆允许第二大体上平面的电极相对于第一大致平面的电极大致平行且可滑动地移动。 连接杆以不平行的关系定位，使得第一和第二电极在经历热膨胀时在非平行的连接杆上相对于彼此滑动，以增加或减少它们之间的距离，同时保持 一个平行的关系。

公开(公告)号：WO2004015735A2

公开(公告)日：2004-02-19

申请号：PCT/US2003/023686

申请日：2003-07-29

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： BENVENISTE, Victor ,  DIVERGILIO, William

IPC: H01J37/00

CPC classification number: H01J37/08 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.

Abstract translation: 公开了一种具有用于提供用于离子注入系统的带状离子束的细长狭缝的离子源。 源包括用于在圆柱形源壳体内等离子体的RF激发的同轴电感耦合天线，以及设置在壳体内的周向磁体，用于产生用于等离子体限制的方位多重的磁场。 还公开了一种用于壳体内部的衬垫，其在等离子体和外部壳体壁之间提供热障碍，以便减轻或减少等离子体限制室内的冷凝。