公开(公告)号：WO2022094381A1

公开(公告)日：2022-05-05

申请号：PCT/US2021/057529

申请日：2021-11-01

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： COLVIN, Neil ,  BASSOM, Neil ,  MOORE, Edward

IPC: H01J37/08 ,  H01J37/317 ,  H01J27/08

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.